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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R040M2HXKSA1

Name: IMZC120R040M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R040M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZC120R040M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R040M2HXKSA1.pdf

Description:: IMZC120R040M2HXKSA1

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Product details

Overview

IMZC120R040M2HXKSA1 from Infineon is a 1200 V, 40 mΩ silicon carbide MOSFET in PG-TO247-4-U07 package with Kelvin source configuration, rated for 34 A DC at T_C = 100°C, featuring 2 µs short-circuit withstand time, V_GS(th) = 4.2 V, and .XT interconnection technology for enhanced thermal performance-used in high-efficiency 3-phase inverters for solar string inverters and EV charging stations.

For engineers reviewing the IMZC120R040M2HXKSA1 datasheet, IMZC120R040M2HXKSA1 pinout, IMZC120R040M2HXKSA1 application, or IMZC120R040M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate drive compatibility with -5 V to 0 V turn-off, body diode robustness in hard commutation, and thermal resistance R_th(j-c) = 0.53 K/W.

Technical Context

This SiC MOSFET employs a trench-gate structure with optimized channel mobility and low-Q_GD/Q_G ratio (10 nC / 39 nC), enabling fast switching with minimal Miller-induced oscillation. Its Kelvin source terminal isolates power and sense paths to eliminate source inductance effects during gate control.

The device integrates a robust intrinsic body diode with V_SD = 4.2 V at 25°C and Q_fr = 0.2 µC, supporting zero-voltage switching (ZVS) topologies and unidirectional hard commutation without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports DC-link voltages up to 1100 V in 3-level NPC or ANPC inverters with 10% margin.
R_DS(on)	40 mΩ @ V_GS = 18 V, T_vj = 25°C - enables <1.2 W conduction loss at 18 A, critical for >99% efficiency targets.
t_SC	2 µs @ V_DD ≤ 800 V - allows deterministic short-circuit protection using gate driver desaturation detection.
R_th(j-c)	0.53 K/W - delivers 109 W power dissipation at T_C = 100°C, reducing heatsink size by ~35% vs. comparable Si devices.
V_GS(th)	4.2 V (typ.) - provides noise immunity against dV/dt-induced false turn-on while enabling reliable 15 V gate drive.
Q_GD/Q_G	10 nC / 39 nC - yields low Miller ratio (0.26), minimizing gate drive power and improving EMI behavior in 100 kHz+ designs.

Pinout & Package

Package: PG-TO247-4-U07 - 4-pin through-hole package with isolated Kelvin source terminal for precise gate control and reduced dynamic R_DS(on) overshoot.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main current path anode	High-current connection to DC-link capacitor; requires low-inductance layout to limit V_DS overshoot during turn-off.
2 – Source	Main current path cathode	Power return path for load current; must be routed separately from Kelvin source to avoid voltage drop interference.
3 – Kelvin Sense	Gate reference for source potential	Provides true source potential to gate driver, eliminating common-source inductance impact on switching speed and stability.
4 – Gate	Control input	Receives gate drive signal; requires low-impedance path to minimize ringing; compatible with Infineon 1EDC/2EDN gate drivers.

Key Features

Feature	Design Value
.XT interconnection technology	Reduces thermal resistance by 22% vs. standard wire-bond TO-247, enabling 200°C overload operation for 100 h cumulative.
Robust body diode	Q_fr = 0.2 µC and I_frm = 18.3 A @ 25°C support ZVS in LLC resonant converters without external diode.
Short-circuit ruggedness	2 µs withstand time at 800 V bus allows use with standard desaturation detection circuits without external current sensors.
Gate threshold stability	V_GS(th) shift < ±0.3 V from 25°C to 175°C ensures consistent turn-on timing across industrial temperature range.

Applications

Solar String Inverter

EV DC Fast Charging

Use Scenario: High-frequency MPPT stage in 15–25 kW string inverters operating at 50–100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switch in interleaved boost converter, handling 34 A DC with <1.5% efficiency penalty from conduction losses.

Use Value: 40 mΩ R_DS(on) and 0.53 K/W R_th(j-c) reduce heatsink mass by 40% versus Si IGBT alternatives while maintaining 200°C peak junction capability.

Use Scenario: Primary switching element in 3-phase AC/DC PFC and DC/DC isolation stages of 150–350 kW liquid-cooled EV chargers.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC, requiring bidirectional conduction and fast recovery under hard commutation.

Use Value: Body diode V_SD = 4.2 V and Q_fr = 0.2 µC enable efficient synchronous rectification without reverse recovery spikes or snubbers.

Industrial UPS

Energy Storage System (ESS) Inverter

Use Scenario: Bidirectional inverter stage in online double-conversion UPS systems delivering 10–50 kVA with <5 ms transfer time.

IC Role / Device Role / Timing Role: Half-bridge switch in 16 kHz PWM inverter, managing 34 A continuous output current with tight thermal constraints.

Use Value: 2 µs short-circuit withstand time enables deterministic fault response using gate driver desaturation detection, meeting UL 1741 SA requirements.

Use Scenario: Grid-forming inverter in residential/commercial battery storage systems (5–30 kW), operating in islanded and grid-tied modes.

IC Role / Device Role / Timing Role: Output stage switch in 3L-TNPC topology, handling 1200 V DC-link and 50 kHz switching with low E_off = 32 µJ.

Use Value: Low E_tot = 215 µJ @ 25°C reduces switching losses by 65% vs. Si MOSFETs, enabling air-cooled design at 98.5% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0040120K	R_DS(on) = 40 mΩ, but V_GS(th) = 2.6 V (min); no Kelvin source; R_th(j-c) = 0.75 K/W	Lacks Kelvin source, limiting gate drive stability in high-dI/dt applications; higher thermal resistance increases heatsink cost.	Prefer IMZC120R040M2HXKSA1 where gate noise immunity and thermal performance are critical.
IXFH40N120X	Si-based; R_DS(on) = 65 mΩ; t_SC = 10 µs; V_GS(th) = 3.5 V; no body diode rating	Higher conduction loss, slower switching, and no specified body diode ruggedness-requires external anti-parallel diode.	Select IMZC120R040M2HXKSA1 for >50 kHz designs requiring integrated body diode and <2 µs fault response.

Compared with C3M0040120K and IXFH40N120X, IMZC120R040M2HXKSA1 delivers superior thermal management via .XT packaging, deterministic short-circuit behavior, and Kelvin-source-enabled gate control-making it optimal for high-reliability, high-frequency industrial power conversion where layout parasitics and thermal margins are constrained.

Availability

IMZC120R040M2HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast charging systems, and industrial UPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IMZC120R040M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ G2 family-designed specifically for high-efficiency, high-power-density industrial and renewable energy applications demanding 1200 V blocking capability, ultra-low switching losses, and rugged operation up to 200°C junction temperature.

FAQ

What gate driver voltage range is recommended for reliable operation?

Infineon specifies V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V. A –5 V turn-off bias improves noise immunity and prevents parasitic turn-on during high dV/dt transitions. Gate drivers such as 1EDC30H12AH or 2EDN7524R provide compatible dual-rail outputs with fast slew rates and integrated DESAT protection.

Can the Kelvin source and power source pins be shorted externally?

No-shorting pins 2 (Source) and 3 (Kelvin Sense) invalidates the Kelvin sensing function and degrades switching performance. The Kelvin path must remain electrically isolated to ensure accurate gate-to-source voltage control; mixing these terminals causes gate overdrive, increased switching losses, and potential oscillation during turn-on.

Is this device qualified for automotive applications?

No-IMZC120R040M2HXKSA1 is qualified per JEDEC JESD47/JESD20/JESD22 for industrial applications only. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond 175°C junction. For automotive traction inverters, consider Infineon's IMW120R045M1H or AIMW120R045M1H series.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode has V_SD = 4.2 V and Q_fr = 0.2 µC at 25°C-higher forward voltage but lower Q_fr than typical 1200 V SiC Schottkys (V_F ≈ 1.5 V, Q_c ≈ 0.4 µC). It excels in hard-commutation scenarios where reverse recovery robustness matters more than forward drop, eliminating need for separate anti-parallel diodes in totem-pole PFC.

IMZC120R040M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 18A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 5.5mA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1310 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 218W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R040M2HXKSA1 FAQ

1.How can I place an order for IMZC120R040M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R040M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R040M2HXKSA1 reliable?

The price and inventory of IMZC120R040M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R040M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R040M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R040M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R040M2HXKSA1?

IMZC120R040M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R040M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R040M2HXKSA1?

For technical support, including IMZC120R040M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R040M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R040M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R040M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R040M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R040M2HXKSA1?

All IMZC120R040M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R040M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R040M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R040M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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