Infineon Technologies IPA030N10NF2SXKSA1

Overview

IPA030N10NF2SXKSA1 from Infineon Technologies is a 100 V, 3.0 mΩ N-channel enhancement-mode MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 83 A continuous drain current at TC = 25 °C, features 100% avalanche testing, and supports high-efficiency power conversion in DC-DC converters and motor drives.

For engineers reviewing the IPA030N10NF2SXKSA1 datasheet, IPA030N10NF2SXKSA1 pinout, IPA030N10NF2SXKSA1 application, or IPA030N10NF2SXKSA1 equivalent, key selection criteria include RDS(on) ≤ 3.0 mΩ at VGS = 10 V, Qg = 103 nC, Qoss = 131 nC, thermal resistance RthJC = 3.7 °C/W, and avalanche energy EAS = 598 mJ - all critical for hard-switching and high-current industrial power stages.

Technical Context

This MOSFET employs Infineon's StrongIRFET™ 2 technology optimized for low conduction and switching losses in unidirectional high-current power paths. Its gate threshold voltage (VGS(th) = 2.2–3.8 V) ensures reliable turn-on with standard 10 V gate drivers, while the 4.4 V gate plateau voltage enables stable Miller region control during switching transitions.

The device integrates a robust body diode with trr = 44 ns and Qrr = 327 nC, supporting synchronous rectification and freewheeling in buck converters and half-bridge inverters. Thermal design is anchored by a 3.7 °C/W junction-to-case resistance and rated operation up to Tj = 175 °C, enabling sustained performance under high ambient loads.

Key Specifications

Pinout & Package

Package: PG-TO220 FullPAK (isolated mounting base, drain-connected tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL120N10F7 and IXFH80N10P, IPA030N10NF2SXKSA1 offers the lowest RDS(on) × Qg product and highest certified avalanche energy, making it optimal for space-constrained, high-reliability industrial power stages where thermal headroom and transient robustness are critical.

Availability

IPA030N10NF2SXKSA1 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IPA030N10NF2SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the StrongIRFET™ 2 Power-Transistor product line, engineered for high-current, high-efficiency switching in industrial motor drives, renewable energy inverters, and server power supplies - emphasizing ruggedness, low-loss operation, and extended temperature reliability.

FAQ

What is the maximum gate-source voltage rating for IPA030N10NF2SXKSA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range of –10 V to +10 V. Exceeding +20 V risks permanent gate oxide damage, while negative gate bias below –10 V may cause unintended turn-on due to parasitic capacitance coupling in high-dV/dt environments.

Does IPA030N10NF2SXKSA1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to dampen oscillation and control switching speed. For 50 A switching with 10 V drive, Infineon recommends RG,ext = 1.6 Ω (per datasheet test condition), yielding td(on) = 20 ns and tr = 65 ns. Lower values increase EMI risk; higher values raise switching losses.

Can IPA030N10NF2SXKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for RDS(on) (normalized increase of ~2× from 25 °C to 175 °C) enables inherently stable current sharing. Successful paralleling requires matched PCB trace inductance (<10 nH difference), identical gate drive routing, and thermal coupling via shared heatsink to ensure uniform junction temperature rise.

Is the drain tab electrically isolated in the PG-TO220 FP package?

No - the drain is internally connected to the metal tab (Pin 2), which serves as the primary thermal path. Electrical isolation from the heatsink requires insulating hardware (e.g., silicone pad + shoulder washer) unless the system design intentionally references the heatsink to drain potential.