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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA040N06NXKSA1

Name: IPA040N06NXKSA1
Brand: Infineon Technologies
SKU: IPA040N06NXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA040N06NXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA040N06NXKSA1.pdf

Description:: MOSFET N-CH 60V 69A TO220-FP

Quantity:: RFQ Add To RFQ list

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Inventory:420

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Product details

Overview

IPA040N06NXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-efficiency synchronous rectification in SMPS, with 60 V V_DS, 4.0 mΩ R_DS(on) max at V_GS = 10 V, 69 A continuous drain current, and TO-220-FP package. It supports high-current DC-DC converters in server power supplies and telecom rectifiers.

For engineers reviewing the IPA040N06NXKSA1 datasheet, IPA040N06NXKSA1 pinout, IPA040N06NXKSA1 application, or IPA040N06NXKSA1 equivalent, key selection criteria include R_DS(on) at 6 V gate drive, Q_g (38 nC), Q_oss (44 nC), avalanche ruggedness (77 mJ), and thermal resistance (R_thJC = 3.1 K/W).

Technical Context

This device uses trench-gate silicon technology to achieve low conduction loss and fast switching with controlled gate charge distribution. Its gate threshold voltage (2.1–3.3 V) ensures reliable turn-on under wide input conditions, while the 100% avalanche-tested rating enables robust operation in inductive load switching.

The integrated body diode exhibits low forward voltage (0.88 V typ. at 30 A) and fast reverse recovery (t_rr = 33 ns typ.), making it suitable for synchronous rectification where diode conduction and commutation losses dominate efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input systems with margin against transients
R_DS(on), max	4.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-current output rails
I_D, cont.	69 A @ T_C = 25 °C - Supports >300 W output in compact TO-220-FP footprint with heatsink
Q_g	38 nC - Determines gate driver power requirement and switching speed in hard-switched topologies
Q_oss	44 nC - Directly impacts turn-off energy loss and zero-voltage switching (ZVS) feasibility
E_AS	77 mJ - Confirmed single-pulse avalanche capability for overvoltage protection without external clamping
R_thJC	3.1 K/W - Enables junction temperature rise of ≤31 °C at 10 W dissipation, simplifying thermal design

Pinout & Package

IPA040N06NXKSA1 is housed in a TO-220-FP (PG-TO220-FP) package with isolated tab, featuring three terminals: Drain (Pin 2), Gate (Pin 1), and Source (Pin 3). The package provides mechanical stability and thermal path to heatsink via the drain-connected tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 0–10 V logic-level signal; requires low-impedance driver due to 38 nC total gate charge
Pin 2 (Drain)	High-side power terminal	Connected to switched node; electrically tied to heatsink tab-requires isolation when mounted
Pin 3 (Source)	Reference/return terminal	Serves as local ground reference for gate drive; carries full load current and body diode return path

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_oss ratio (0.86) and fast t_rr (33 ns) minimize switching loss in secondary-side FETs
100% avalanche tested	Guaranteed 77 mJ single-pulse energy handling eliminates need for external snubbers in flyback/LLC designs
Superior thermal resistance	R_thJC = 3.1 K/W allows 69 A operation at T_C = 25 °C without derating in forced-air environments
JEDEC-qualified reliability	Complies with J-STD-20 reflow and JESD22 stress standards for industrial and telecom applications
Pb-free & halogen-free	RoHS-compliant lead plating and IEC61249-2-21 compliant materials meet global environmental requirements

Applications

Server VRM Output Stage

Telecom Rectifier Secondary

Use Scenario: High-current, low-voltage (≤12 V) point-of-load regulation in dual-phase 400 A server VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes in buck converter low-side switch position.

Use Value: Reduces conduction loss by >40% vs. 4 mΩ discrete alternatives with comparable Q_g, enabling >95% efficiency at 50 A.

Use Scenario: 48 V to 12 V DC-DC conversion in telecom base station power shelves.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Low R_DS(on) and Q_oss enable ZVS across full load range, cutting switching loss by 30% versus standard 60 V MOSFETs.

Industrial PLC Power Supply

EV Onboard Charger Auxiliary Rail

Use Scenario: 24 V auxiliary supply in programmable logic controller backplanes with high ambient temperature (70 °C).

IC Role / Device Role / Timing Role: Main switching FET in active clamp forward converter delivering 15 A at 24 V.

Use Value: Avalanche rating and 175 °C T_j rating ensure reliability during line surges and sustained overload without thermal shutdown.

Use Scenario: 12 V auxiliary power generation from 400 V battery bus in EV onboard chargers.

IC Role / Device Role / Timing Role: Isolated gate driver supply FET in flyback converter powering MCU and gate drivers.

Use Value: Fast t_rr and low V_SD reduce diode conduction loss during dead-time, improving light-load efficiency by 2.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB040N06N3 G	Same die, PG-TO263-3 package; R_thJC = 2.3 K/W; no isolated tab	Better thermal performance but requires PCB copper area instead of heatsink mounting	Select for surface-mount designs with tight height constraints and adequate board thermal mass
STL220N6F7	60 V, 220 A rated, R_DS(on) = 2.2 mΩ, Q_g = 105 nC, TO-220FP	Higher current capacity but higher gate drive demand and larger die size	Choose when system requires >100 A peak current and can support higher gate driver power

Compared with IPB040N06N3 G, IPA040N06NXKSA1 offers mechanical mounting flexibility and electrical isolation; versus STL220N6F7, it delivers lower gate drive burden and better light-load efficiency in 50–70 A applications.

Availability

IPA040N06NXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial PLC power supplies, and EV onboard charger auxiliary rails requiring stable component supply and long-term production continuity.

Supply support for IPA040N06NXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 60 V power transistor family, engineered specifically for high-frequency, high-efficiency switching in SMPS and synchronous rectification applications.

FAQ

Is IPA040N06NXKSA1 suitable for gate drive with 5 V logic?

No. Its gate threshold voltage range is 2.1–3.3 V, but R_DS(on) rises sharply below V_GS = 6 V (4.7 mΩ max at 6 V). Full enhancement requires ≥10 V drive to achieve 4.0 mΩ, making it unsuitable for 5 V-only controllers without level-shifting.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies 69 A continuous current at T_C = 25 °C and 48 A at T_C = 100 °C. For reliable long-term operation, keep T_C ≤ 90 °C to maintain R_DS(on) within 10% of nominal and avoid accelerated parametric drift.

Does IPA040N06NXKSA1 have an integrated ESD protection diode on the gate?

No. The device lacks built-in gate ESD protection. External 10–22 Ω gate series resistor and TVS diode between gate and source are required to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV.

Can IPA040N06NXKSA1 replace a 60 V Schottky diode in synchronous rectification?

Yes-when driven with appropriate timing control. Its low V_SD (0.88 V) and fast t_rr (33 ns) allow it to outperform 60 V Schottkys in forward conduction loss above ~10 A, provided gate drive avoids shoot-through and matches diode conduction timing.

IPA040N06NXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 69A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3375 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA040N06NXKSA1 FAQ

1.How can I place an order for IPA040N06NXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA040N06NXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA040N06NXKSA1 reliable?

The price and inventory of IPA040N06NXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA040N06NXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA040N06NXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA040N06NXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA040N06NXKSA1?

IPA040N06NXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA040N06NXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA040N06NXKSA1?

For technical support, including IPA040N06NXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA040N06NXKSA1 requirements.

6.How does Aetrix verify that IPA040N06NXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA040N06NXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA040N06NXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA040N06NXKSA1?

All IPA040N06NXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA040N06NXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA040N06NXKSA1 part is unused and in its original packaging.

Return procedure for IPA040N06NXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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