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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA052N08NM5SXKSA1

Name: IPA052N08NM5SXKSA1
Brand: Infineon Technologies
SKU: IPA052N08NM5SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA052N08NM5SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA052N08NM5SXKSA1.pdf

Description:: MOSFET N-CH 80V 64A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPA052N08NM5SXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220FP package, rated for 80 V V_DS, 5.2 mΩ R_DS(on) max at V_GS = 10 V, 64 A continuous drain current, and optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPA052N08NM5SXKSA1 datasheet, IPA052N08NM5SXKSA1 pinout, IPA052N08NM5SXKSA1 application, or IPA052N08NM5SXKSA1 equivalent, key selection criteria include gate charge (Q_G = 42 nC), output charge (Q_OSS = 51 nC), avalanche ruggedness (E_AS = 84 mJ), thermal resistance (R_thJC = 4 °C/W), and integrated low-loss body diode performance.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM) for efficient switching in 48 V input power stages. Its 100% avalanche-tested construction ensures robustness under transient overvoltage conditions in hard-switched topologies.

The MOSFET features a logic-compatible gate threshold (V_GS(th) = 2.2–3.8 V), low reverse recovery charge (Q_RR = 92 nC), and fast switching times (t_r/t_f = 7 ns each) - enabling operation above 500 kHz in synchronous buck and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus applications with 20 % margin
R_DS(on), max	5.2 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 64 A DC
I_D, cont	64 A at T_C = 25 °C - Supports high-current output stages without parallel devices
Q_G	42 nC - Low gate drive energy reduces controller loading and EMI in high-f_SW designs
Q_OSS	51 nC - Minimizes turn-on loss during zero-voltage switching transitions
E_AS	84 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching
R_thJC	4 °C/W - Allows direct heatsink mounting for thermally constrained industrial power modules

Pinout & Package

Package: PG-TO220FP (FullPAK), surface-mount variant of TO-220 with isolated drain tab and footprint optimized for automated assembly and thermal via integration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 2900–3800 pF) enables fast edge rates
Pin 2 (Drain)	High-side switch node	Exposed metal tab - electrically connected to drain; requires isolation from heatsink unless floating topology
Pin 3 (Source)	Reference node / return path	Common connection point for gate driver return, current sense, and low-side reference in half-bridge layouts

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_G)	218 mΩ·nC - Reduces combined conduction + switching losses in 300–1000 kHz SMPS
100 % avalanche tested	Rated E_AS = 84 mJ - Eliminates need for external snubbers in flyback or boost converters
Low Q_RR and soft-recovery body diode	Q_RR = 92 nC, t_rr = 56 ns - Suppresses voltage overshoot and ringing during freewheeling
Pb-free, halogen-free packaging	Complies with IEC61249-2-21 and RoHS - Suitable for automotive and industrial end-equipment
JEDEC-qualified reliability	Qualified per JESD47 - Ensures stable parametric performance across 15-year product lifecycle

Applications

Server VRM

Industrial UPS

Use Scenario: 48 V input, 12 V/100 A output synchronous buck converter in AI accelerator rack power supplies.

IC Role / Device Role / Timing Role: High-side primary switch operating at 600 kHz with adaptive dead-time control.

Use Value: 5.2 mΩ R_DS(on) and 42 nC Q_G enable >95 % efficiency at full load while maintaining <65 °C case temperature.

Use Scenario: Bidirectional DC-DC stage in 3-phase 400 V industrial uninterruptible power supply with battery backup.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated dual-active-bridge (DAB) topology.

Use Value: Low Q_OSS (51 nC) and fast t_f (7 ns) minimize ZVS transition loss, improving partial-load efficiency by 2.1 %.

Telecom Rectifier

EV Onboard Charger

Use Scenario: 3 kW front-end PFC + isolated LLC combo module in telecom base station power shelf.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC transformer secondary.

Use Value: 100 % avalanche rating allows safe operation during output short-circuit events without derating.

Use Scenario: 6.6 kW AC/DC OBC using interleaved totem-pole PFC and phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole PFC leg with bidirectional conduction capability.

Use Value: V_GS(th) range (2.2–3.8 V) supports precise gate driving with SiC gate drivers, reducing shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 4.8 mΩ, Q_G = 51 nC, PG-TSDSON8 package (5×6 mm²)	Surface-mount only; no isolated drain tab - requires PCB-level isolation design	Preferred for space-constrained, fully SMT designs where thermal via density compensates for higher R_thJC.
IXFH52N80X3	R_DS(on) = 65 mΩ, Q_G = 125 nC, TO-247 package, 800 V rating	Higher voltage rating but significantly higher conduction and switching losses at 48 V bus	Suitable only if system requires 800 V headroom or legacy TO-247 mechanical compatibility.

Compared with STL220N8F7AG and IXFH52N80X3, IPA052N08NM5SXKSA1 delivers optimal balance of low R_DS(on), moderate Q_G, and through-hole thermal interface - making it ideal for cost-sensitive, medium-power industrial converters requiring field-serviceable replacement.

Availability

IPA052N08NM5SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial UPS systems, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA052N08NM5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial SMPS, emphasizing FOM-driven MOSFET optimization over legacy voltage-headroom prioritization.

FAQ

What is the maximum junction temperature for continuous operation?

The IPA052N08NM5SXKSA1 has a maximum junction temperature (T_j) of 175 °C, validated per JEDEC standards. Derated continuous current drops to 46 A at T_C = 100 °C, and thermal design must maintain T_j ≤ 150 °C for 10-year reliability in industrial environments.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes - the integrated body diode is characterized with V_SD = 0.88 V (typ.) at 32 A and t_rr = 56 ns, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge topologies without external diodes, provided gate timing avoids cross-conduction.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates with 0 V to +10 V gate drive. Its V_GS(th) range (2.2–3.8 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers; negative bias is unnecessary and not recommended per datasheet absolute maximum ratings.

Can IPA052N08NM5SXKSA1 replace IPA050N08N5 in existing designs?

Yes - both share identical PG-TO220FP package, pinout, and 80 V rating; IPA052N08NM5SXKSA1 offers 5.2 mΩ vs. 5.0 mΩ R_DS(on) and slightly lower Q_G (42 nC vs. 45 nC), delivering marginally improved efficiency with no layout or drive circuit changes required.

IPA052N08NM5SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 65µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPA052N08NM5SXKSA1 FAQ

1.How can I place an order for IPA052N08NM5SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA052N08NM5SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA052N08NM5SXKSA1 reliable?

The price and inventory of IPA052N08NM5SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA052N08NM5SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA052N08NM5SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA052N08NM5SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA052N08NM5SXKSA1?

IPA052N08NM5SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA052N08NM5SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA052N08NM5SXKSA1?

For technical support, including IPA052N08NM5SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA052N08NM5SXKSA1 requirements.

6.How does Aetrix verify that IPA052N08NM5SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA052N08NM5SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA052N08NM5SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA052N08NM5SXKSA1?

All IPA052N08NM5SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA052N08NM5SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA052N08NM5SXKSA1 part is unused and in its original packaging.

Return procedure for IPA052N08NM5SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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