Infineon Technologies IPA057N08N3GXKSA1

Overview

IPA057N08N3GXKSA1 from Infineon Technologies is an N-channel 80 V, 5.7 mΩ (max) OptiMOS™3 power MOSFET in PG-TO220-FP package, rated for 60 A continuous drain current at T_C = 25 °C and optimized for high-frequency DC/DC converters with low gate charge × R_DS(on) figure-of-merit. It features 100% avalanche tested ruggedness, 2500 V_AC isolation, and RoHS/halogen-free compliance.

For engineers reviewing the IPA057N08N3GXKSA1 datasheet, IPA057N08N3GXKSA1 pinout, IPA057N08N3GXKSA1 application, or IPA057N08N3GXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V and 6 V gate drive, Q_g = 52–69 nC, C_iss/C_oss/C_rss, t_r/t_f, and integrated body diode recovery performance (Q_rr = 121 nC, t_rr = 64 ns).

Technical Context

This discrete power MOSFET uses silicon-based OptiMOS™3 technology with trench-gate process to achieve low conduction loss and fast switching trade-off. Its static characteristics include V_GS(th) = 2.0–3.5 V and R_DS(on) = 4.9–5.7 mΩ @ V_GS = 10 V, I_D = 60 A, while dynamic parameters support hard-switched topologies up to several hundred kHz.

The device integrates a robust, low-Q_rr body diode with V_SD = 1.0–1.2 V @ I_F = 60 A and t_rr = 64 ns, enabling synchronous rectification in buck converters and flyback primary-side switching where unclamped inductive switching stress must be managed via single-pulse E_AS = 290 mJ.

Key Specifications

Pinout & Package

Package: PG-TO220-FP - Full-pack, isolated TO-220 variant with reinforced insulation (2500 V_AC, 1 min), standard pin pitch, and tab-isolated drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with STL110N8LF7AG and IRF1407PBF, IPA057N08N3GXKSA1 delivers superior FOM, guaranteed avalanche capability, and lower C_oss, making it optimal for high-frequency, high-reliability DC/DC and motor control where switching loss and ruggedness are critical.

Availability

IPA057N08N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and telecom power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPA057N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in DC/DC converters, motor drives, and renewable energy systems where low R_DS(on) and fast switching dynamics are essential.

FAQ

What is the maximum safe operating junction temperature for IPA057N08N3GXKSA1?

The device is rated for T_j = –55 °C to +175 °C per JEDEC specifications. Continuous operation above 150 °C requires derating of I_D and P_tot per the thermal curves on page 4 of Rev. 2.2 datasheet; R_thJC = 3.8 K/W defines the minimum heatsink requirement for sustained 60 A conduction.

Does IPA057N08N3GXKSA1 support gate drive at 5 V logic level?

No-it is a normal-level N-channel MOSFET with V_GS(th) = 2.0–3.5 V, but R_DS(on) is not specified below V_GS = 6 V. At V_GS = 5 V, R_DS(on) exceeds 10 mΩ and is not guaranteed; 10 V drive is required to achieve the rated 5.7 mΩ maximum.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the integrated diode has V_SD = 1.0–1.2 V at 60 A and t_rr = 64 ns, with Q_rr = 121 nC. These values enable efficient synchronous operation up to ~300 kHz in 48 V input buck converters when paired with appropriate gate timing control to avoid shoot-through.

How does the PG-TO220-FP package differ from standard TO-220 in layout and thermal performance?

PG-TO220-FP retains the same footprint and pinout as standard TO-220 but adds reinforced electrical isolation between the drain tab and mounting surface (2500 V_AC, 1 min). Thermal resistance R_thJC remains 3.8 K/W-identical to standard TO-220-so heatsink interface requirements are unchanged, but creepage/clearance is enhanced for safety-critical designs.