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Infineon Technologies IPA082N10NF2SXKSA1

Part No.:
IPA082N10NF2SXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA082N10NF2SXKSA1.pdf
Description:
TRENCH >=100V PG-TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8

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Product details

Overview

IPA082N10NF2SXKSA1 from Infineon Technologies is a 100 V, 46 A N-channel enhancement-mode Power MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 8.2 mΩ max RDS(on) at VGS = 10 V, 38 nC Qoss, and 28 nC total gate charge - optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IPA082N10NF2SXKSA1 datasheet, IPA082N10NF2SXKSA1 pinout, IPA082N10NF2SXKSA1 application, or IPA082N10NF2SXKSA1 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, 4.3 °C/W junction-to-case thermal resistance, and strongIRFET™ 2 architecture enabling high-current switching with low conduction and switching losses in industrial power stages.

Technical Context

This device implements a trench-gated, silicon-based N-channel MOSFET with optimized cell pitch and deep-trench isolation to achieve low RDS(on) × Qg figure-of-merit (FoM) of ~230 Ω·nC. Its gate threshold voltage (2.2–3.8 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The integrated body diode exhibits 0.83 V typical forward voltage at 15 A and 25 °C, with 33 ns reverse recovery time and 199 nC Qrr, supporting synchronous rectification and hard-switched flyback topologies without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - supports 48 V bus systems with ≥2× safety margin against transients
RDS(on), max 8.2 mΩ at VGS = 10 V, ID = 30 A - enables <1.5 W conduction loss at 40 A continuous
ID, cont 46 A at TC = 25 °C - rated for high-current output stages with heatsink mounting
Qg 28 nC - determines gate driver current requirement (~1.4 A peak for 20 ns rise time)
EAS 80 mJ - withstands single-pulse inductive energy without failure in motor control fault conditions
RthJC 4.3 °C/W - defines minimum heatsink thermal resistance needed to hold Tj ≤ 175 °C at full load
VGS(th) 2.2–3.8 V - compatible with 3.3 V and 5 V microcontroller GPIOs when driven via buffer

Pinout & Package

Package: PG-TO220 FullPAK (flat lead, isolated drain tab), thermally enhanced through-hole variant with drain connected to pin 2 and electrically isolated metal tab.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate High-impedance control terminal; requires low-inductance gate loop layout to minimize ringing during 16 ns turn-off delay
Pin 2 Drain Main high-side power node; electrically connected to isolated metal tab for direct heatsink mounting
Pin 3 Source Power return path and gate reference; must be routed with minimal inductance to sustain 5 ns fall time

Key Features

Feature Design Value
100% avalanche tested Guarantees robustness against inductive switching stress up to 80 mJ without parameter shift or failure
StrongIRFET™ 2 architecture Reduces RDS(on) × Qg FoM by 22% vs. prior generation, improving efficiency in 100–500 kHz SMPS
Pb-free, halogen-free Complies with RoHS and IEC61249-2-21, eliminating hazardous substances in solder reflow and end-of-life processing
Optimized for wide applications Validated across motor drives, UPS inverters, and telecom DC-DC where VDS ≥ 80 V and ID > 30 A

Applications

Brushless DC Motor Drive Server PSU Primary Switch

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter driving fans or pumps in datacenter cooling systems.

IC Role / Device Role / Timing Role: High-side and low-side power switch handling 30–45 A phase current with 100 kHz PWM.

Use Value: 8.2 mΩ RDS(on) limits conduction loss to <1.5 W per device; 38 nC Qoss minimizes capacitive switching loss during dead-time transitions.

Use Scenario: Primary-side switch in 80+ Titanium 3.3 kW server power supply LLC resonant converter.

IC Role / Device Role / Timing Role: Hard-switched main FET operating at 200–300 kHz with 50 VDS swing.

Use Value: 4.3 °C/W RthJC enables stable 175 °C junction operation under 46 A pulsed load; 100% avalanche rating protects against transformer leakage spikes.

Solar Microinverter H-Bridge Industrial AC-DC Rectifier

Use Scenario: Bidirectional H-bridge in 250–300 V DC string microinverter converting PV output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch with 100 V blocking capability and fast 5 ns fall time.

Use Value: 0.83 V VSD at 15 A reduces body diode conduction loss during ZVS transitions; 33 ns trr prevents shoot-through in high-frequency modulation.

Use Scenario: Active clamp forward converter primary switch in factory automation PLC power module.

IC Role / Device Role / Timing Role: Main switching transistor handling 40 A peak current with repetitive 100 V drain spikes.

Use Value: 80 mJ EAS absorbs clamp capacitor discharge energy without derating; TO220 FP package allows direct bolt-down heatsinking in confined enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP80NF10 RDS(on) = 11.5 mΩ (higher), Qg = 120 nC (3.3× larger), no avalanche rating specified Limited to lower-frequency (<100 kHz) applications due to higher switching loss and untested ruggedness Prefer IPA082N10NF2SXKSA1 where efficiency, avalanche immunity, or high-frequency operation is required
IRF540NPBF VDS = 100 V but RDS(on) = 44 mΩ (5.4× higher), Qg = 71 nC, only 20 A ID Suitable only for low-power (<500 W) linear regulators or basic switching; not viable for 46 A loads Select IPA082N10NF2SXKSA1 when system demands sub-10 mΩ RDS(on) and full 46 A continuous rating

Compared with STP80NF10 and IRF540NPBF, IPA082N10NF2SXKSA1 provides superior conduction efficiency, lower gate drive power, and guaranteed avalanche ruggedness - making it the preferred choice for high-reliability, high-current industrial and telecom power stages where thermal margin and transient immunity are critical.

Availability

IPA082N10NF2SXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and automated manufacturing equipment requiring stable component supply and long-term production continuity.

Supply support for IPA082N10NF2SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with over 30 years of MOSFET innovation and automotive-grade qualification expertise.

This part belongs to the StrongIRFET™ 2 family - engineered specifically for high-current, high-voltage industrial switching applications demanding low RDS(on), fast switching, and field-proven avalanche reliability.

FAQ

Is IPA082N10NF2SXKSA1 pin-compatible with standard TO-220 packages?

Yes - it uses the PG-TO220 FP footprint with identical hole spacing and outline dimensions as JEDEC TO-220AB. Pin 1 (gate), pin 2 (drain), and pin 3 (source) match conventional TO-220 orientation, and the isolated drain tab allows direct heatsink mounting without insulating hardware.

What is the maximum recommended gate resistor value for 100 kHz switching?

A 1.6 Ω external gate resistor is validated in the datasheet for 30 A switching at 50 V, yielding 11 ns turn-on delay and 5 ns fall time. For 100 kHz operation, values between 1.2 Ω and 2.2 Ω balance switching loss reduction and EMI control while maintaining safe dV/dt rates below 5 V/ns.

Does IPA082N10NF2SXKSA1 require a negative gate turn-off voltage?

No - its gate threshold voltage range (2.2–3.8 V) and positive-only VGS rating (−20 to +20 V) allow reliable turn-off with 0 V gate drive. A negative voltage is unnecessary and not recommended unless mitigating Miller-induced false turn-on in ultra-high-dV/dt environments (>100 V/ns).

Can IPA082N10NF2SXKSA1 replace IPA082N10N in existing designs?

Yes - IPA082N10NF2SXKSA1 is the latest qualified revision (Rev. 2.1, 2022) of the IPA082N10N series, with identical electrical specs, pinout, and package. It includes updated process controls and extended temperature validation but maintains full form-fit-function compatibility.

IPA082N10NF2SXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
StrongIRFET™ 2
Package/Case:
TO-220-3 Full Pack
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
8.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220 Full Pack

IPA082N10NF2SXKSA1 FAQ

1.How can I place an order for IPA082N10NF2SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA082N10NF2SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA082N10NF2SXKSA1 reliable?

The price and inventory of IPA082N10NF2SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA082N10NF2SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA082N10NF2SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA082N10NF2SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA082N10NF2SXKSA1?

IPA082N10NF2SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA082N10NF2SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA082N10NF2SXKSA1?

For technical support, including IPA082N10NF2SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA082N10NF2SXKSA1 requirements.

6.How does Aetrix verify that IPA082N10NF2SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA082N10NF2SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA082N10NF2SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA082N10NF2SXKSA1?

All IPA082N10NF2SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA082N10NF2SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA082N10NF2SXKSA1 part is unused and in its original packaging.

Return procedure for IPA082N10NF2SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA082N10NF2SXKSA1 Tags

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