Infineon Technologies IPA126N10NM3SXKSA1

Overview

IPA126N10NM3SXKSA1 from Infineon Technologies is a 100 V, 35 A N-channel enhancement-mode MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 12.6 mΩ max R_DS(on) at V_GS = 10 V, 26 nC total gate charge, and 90 mJ single-pulse avalanche energy-optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPA126N10NM3SXKSA1 datasheet, IPA126N10NM3SXKSA1 pinout, IPA126N10NM3SXKSA1 application, or IPA126N10NM3SXKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_oss trade-offs for ZVS/ZCS topologies, thermal resistance (R_thJC = 4.5 °C/W), and integrated body diode recovery (t_rr = 58 ns, Q_rr = 114 nC).

Technical Context

This OptiMOSTM 3-generation device uses trench-gate superjunction technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM) while maintaining robust 100 V breakdown voltage (V_(BR)DSS ≥ 100 V). Its 4.7 V gate plateau voltage enables predictable turn-on timing in hard-switched and resonant converters.

The MOSFET integrates a fast-recovery body diode with 0.9–1.2 V forward voltage at 35 A and exhibits stable R_DS(on) up to 175 °C junction temperature-critical for high-power density industrial SMPS and server VRMs where thermal derating must be minimized.

Key Specifications

Pinout & Package

Package: PG-TO220 FullPAK (lead-free, halogen-free, RoHS-compliant); thermally enhanced variant with isolated drain tab and standard TO-220 footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IPB126N10N3G, IPA126N10NM3SXKSA1 offers mechanical mounting flexibility and drain-isolation capability at the cost of 1 °C/W higher thermal resistance; versus STP120N10F7, it trades peak current headroom for significantly lower gate drive loss and tighter t_rr control in high-frequency SMPS.

Availability

IPA126N10NM3SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, motor drive inverters, and LED driver power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA126N10NM3SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 3 family-designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies where low R_DS(on), low Q_G, and robust avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA126N10NM3SXKSA1 supports 25 A continuous drain current at T_C = 100 °C per the datasheet's ID vs. TC curve (Figure 2). This derating reflects thermal limits of the PG-TO220 FP package and ensures safe operation without exceeding 175 °C maximum junction temperature under steady-state conditions.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage range of 2.0–3.5 V and is fully specified for 0 V turn-off. Its gate oxide integrity and C_iss/C_rss ratio (1880 pF / 14 pF) provide sufficient noise immunity; however, a small negative bias (–2 V) may be used in ultra-high-noise motor drive applications to improve dV/dt immunity beyond spec.

Can the integrated body diode replace an external Schottky diode in synchronous rectification?

Yes-the body diode is characterized with t_rr = 58 ns and Q_rr = 114 nC at 35 A, making it suitable for synchronous rectification in 12 V and 48 V output rails up to 500 kHz. Its V_SD = 0.9–1.2 V at 35 A is higher than Schottky diodes but avoids reverse recovery spikes and simplifies layout.

Is the PG-TO220 FP package compatible with standard TO-220 heatsinks?

Yes-the PG-TO220 FullPAK maintains the same outline and mounting hole positions as standard TO-220, but its drain is internally connected to the metal tab. Electrical isolation (e.g., mica washer or silicone pad) is required between tab and heatsink unless the system design references drain to chassis ground.