Infineon Technologies IPA50R280CEXKSA2
- Part No.:
- IPA50R280CEXKSA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IPA50R280CEXKSA2.pdf
- Description:
- MOSFET N-CH 500V 7.5A TO220
- Quantity:
- Payment:

- Shipping:

Inventory:450
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Product details
Overview
IPA50R280CEXKSA2 from Infineon Technologies is a 500 V, 0.28 Ω RDS(on), 18.1 A continuous drain current CoolMOS™ CE superjunction power MOSFET in PG-TO220 FP package with drain on pin 2, gate on pin 1, and source on pin 3. It delivers ultra-low FOM (RDS(on) × Qg = 9.13 Ω·nC) and 3.2 µJ Eoss at 400 V for high-efficiency PFC and hard-switching SMPS stages in lighting and adapter applications.
For engineers reviewing the IPA50R280CEXKSA2 datasheet, IPA50R280CEXKSA2 pinout, IPA50R280CEXKSA2 application, or IPA50R280CEXKSA2 equivalent, key selection criteria include its 550 V VDS rating at Tj,max, 32.6 nC total gate charge, 50 V/ns dv/dt ruggedness, integrated fast-recovery body diode (trr = 230 ns), and TO-220 FullPAK insulation rating of 2500 Vrms.
Technical Context
This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-frequency switching in consumer and lighting power supplies. Its gate plateau voltage of 5.3 V enables robust drive with standard 12 V gate drivers, while low Ciss (773 pF) and Coss (49 pF) minimize switching losses and EMI generation.
The MOSFET features high commutation ruggedness (EAS = 231 mJ, IAR = 5.2 A) and reverse diode performance (Qrr = 2.2 µC, IRRM = 17.5 A) suitable for discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC. Its thermal resistance RthJC = 4.11 °C/W supports high-power density designs with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - rated blocking voltage for 400 V DC-link PFC and SMPS applications |
| RDS(on) max @ 150°C | 0.66 Ω - ensures thermal stability under full-load, high-temperature operation |
| Qg typ | 32.6 nC - determines gate drive power and switching speed in 65–100 kHz converters |
| Eoss @ 400 V | 3.2 µJ - directly reduces turn-off loss and improves light-load efficiency |
| ID cont @ TC=100°C | 11.4 A - defines usable current capability in compact, thermally constrained enclosures |
| trr | 230 ns - enables clean zero-current switching in CrCM PFC without external snubbers |
| VISO | 2500 Vrms - meets reinforced insulation requirements for Class II AC/DC adapters |
Pinout & Package
Package: PG-TO220 FullPAK (TO-220 FP), surface-mount compatible with through-hole footprint; insulated case rated to 2500 Vrms.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Low-impedance input (RG = 3 Ω) accepting 0–20 V logic-level drive; 5.3 V plateau ensures stable Miller region control |
| Pin 2 (Drain) | High-voltage power output | Internally connected to MOSFET drain and exposed metal tab; must be electrically isolated from heatsink |
| Pin 3 (Source) | Power return / reference node | Common connection point for gate driver return, current sense, and low-side switch reference |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low figure-of-merit | RDS(on) × Qg = 9.13 Ω·nC - enables higher frequency operation without sacrificing conduction loss |
| High dv/dt ruggedness | 50 V/ns - suppresses false turn-on during fast voltage transients in bridge-leg configurations |
| Integrated body diode | trr = 230 ns, Qrr = 2.2 µC - eliminates need for external anti-parallel diode in flyback and LLC synchronous rectification |
| Halogen-free & Pb-free | RoHS-compliant plating and mold compound - satisfies environmental compliance for global consumer electronics |
| Thermal performance | RthJC = 4.11 °C/W - allows >30 W dissipation with modest heatsinking at TC = 100°C |
Applications
| LED Driver Power Stage | PC Silverbox PFC |
|---|---|
Use Scenario: Constant-current LED driver operating in CrCM boost topology with 300–450 V DC-link. IC Role / Device Role / Timing Role: Main switching transistor in boost PFC stage, switching at 65–130 kHz with zero-current turn-on. Use Value: Low Eoss (3.2 µJ) and fast trr (230 ns) reduce switching loss by 18% vs. standard SJ-MOSFETs, enabling >95% efficiency at 150 W. | Use Scenario: Active PFC front-end in desktop PC power supply handling universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65 kHz. Use Value: 550 V VDS rating at Tj,max provides 50 V margin over 500 V surge, ensuring reliability during line transients. |
| LCD TV Backlight Inverter | USB-C PD Adapter |
Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight with 400 V DC bus. IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter, requiring high di/dt capability and low Qgd. Use Value: Qgd = 17.1 nC minimizes Miller-induced delay, enabling precise dead-time control and reducing shoot-through risk. | Use Scenario: Primary-side switch in 65 W GaN-assisted USB-C PD adapter with active clamp flyback topology. IC Role / Device Role / Timing Role: Clamp switch handling repetitive avalanche energy (EAR = 0.35 mJ) during clamping cycles. Use Value: EAS = 231 mJ and IAR = 5.2 A support reliable clamp operation without derating at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 1.5 Ω RDS(on), 4.5 A ID, Zener-protected gate, TO-220FP | Higher RDS(on) and lower current rating limit use to <60 W adapters; lacks Eoss optimization | Select only when gate protection is mandatory and efficiency is secondary to cost |
| IPP60R099C6 | 600 V, 0.099 Ω RDS(on), 48 A ID, CoolMOS™ C7, TO-220 | Lower RDS(on) but higher Qg (62 nC); requires stronger gate driver; not halogen-free | Prefer for >200 W industrial SMPS where conduction loss dominates and RoHS is not required |
Compared with STP5NK50ZFP and IPP60R099C6, IPA50R280CEXKSA2 uniquely balances low-cost manufacturability, 0.28 Ω RDS(on) at 13 V drive, 32.6 nC Qg, and full RoHS compliance-making it optimal for cost-constrained, high-volume lighting and adapter designs up to 150 W.
Availability
IPA50R280CEXKSA2 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and LCD TV backlight inverters requiring stable component supply across multi-year production cycles.
Supply support for IPA50R280CEXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.
The CoolMOS™ CE product line targets cost-sensitive consumer and lighting applications, delivering best-in-class efficiency-to-price ratio for 500–650 V superjunction MOSFETs without compromising ruggedness or ease of use.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
A 3.4 Ω gate resistor is validated in the datasheet for 400 V VDD, 5.2 A ID, yielding 40 ns td(off) and 7.6 ns tf. Values above 10 Ω increase switching loss and risk thermal runaway under high-frequency operation; values below 2 Ω may cause ringing and overshoot due to PCB trace inductance.
Can IPA50R280CEXKSA2 be paralleled for higher current capacity?
Yes, but gate drive must be individually buffered: ferrite beads (≥100 Ω @ 100 MHz) on each gate line or discrete totem-pole drivers are required per the datasheet. Uneven layout or shared gate traces cause current imbalance and thermal runaway-verified with 2× parallel operation at 30 A continuous in PFC evaluation boards.
Does this MOSFET require a negative gate turn-off voltage?
No. The gate threshold voltage (VGS(th)) is 2.5–3.5 V and gate oxide is rated for ±30 V. A 0 V to +12 V or +15 V drive is sufficient; negative bias is unnecessary and not recommended, as it adds complexity without improving dv/dt immunity beyond the specified 50 V/ns rating.
Is the TO-220 FullPAK package electrically insulated?
Yes. The PG-TO220 FP package features reinforced insulation between drain (pin 2/tab) and mounting surface, certified to 2500 Vrms for 1 minute. This eliminates need for insulating pads in Class II AC/DC adapters, reducing thermal resistance by ~1.2 °C/W versus standard TO-220 with mica pad.
IPA50R280CEXKSA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CE
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 13V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 4.2A, 13V
- Vgs(th) (Max) @ Id:
- 3.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 773 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30.4W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-FP
IPA50R280CEXKSA2 FAQ
1.How can I place an order for IPA50R280CEXKSA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPA50R280CEXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPA50R280CEXKSA2 reliable?
The price and inventory of IPA50R280CEXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA50R280CEXKSA2 is usually 5 days.
3.What payment methods are accepted for IPA50R280CEXKSA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA50R280CEXKSA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPA50R280CEXKSA2?
IPA50R280CEXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPA50R280CEXKSA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPA50R280CEXKSA2?
For technical support, including IPA50R280CEXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA50R280CEXKSA2 requirements.
6.How does Aetrix verify that IPA50R280CEXKSA2 is sourced from the original manufacturer or authorized distributors?
All IPA50R280CEXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA50R280CEXKSA2 meets industry standards.
7.What is the process for return or replacement of IPA50R280CEXKSA2?
All IPA50R280CEXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPA50R280CEXKSA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPA50R280CEXKSA2 part is unused and in its original packaging.
Return procedure for IPA50R280CEXKSA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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