Infineon Technologies IPA50R650CEXKSA2

Overview

IPA50R650CEXKSA2 from Infineon Technologies is a 500 V, 0.65 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO220 FP package, featuring 15 nC total gate charge and 1.69 µJ output switching energy at 400 V. It delivers high commutation ruggedness (500 A/µs di/dt), low conduction and switching losses, and is optimized for hard-switching PFC and PWM stages in consumer power supplies.

For engineers reviewing the IPA50R650CEXKSA2 datasheet, IPA50R650CEXKSA2 pinout, IPA50R650CEXKSA2 application, or IPA50R650CEXKSA2 equivalent, key selection criteria include its 550 V V_DS rating at T_j,max, 9 A continuous drain current at 25 °C, 4.6 °C/W junction-to-case thermal resistance, and suitability for cost-sensitive lighting and adapter designs requiring high efficiency without gate drive complexity.

Technical Context

This CoolMOS™ CE device uses superjunction architecture to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 9.75 Ω·nC) and low E_oss (1.69 µJ at 400 V), enabling high-frequency operation with reduced switching losses. Its gate plateau voltage of 5.3 V ensures stable turn-on under varying drive conditions.

The MOSFET integrates an optimized body diode with 162 ns reverse recovery time and 1 µC Q_rr, supporting robust commutation in bridge configurations. Its 2500 V_rms isolation rating and TO-220 FullPAK package support safe operation in isolated AC/DC topologies.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, insulated case, lead-free plating, halogen-free mold compound. Drain connected to tab for enhanced thermal path and electrical isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPD50R650CE and STP5NK50ZFP, IPA50R650CEXKSA2 provides superior thermal performance due to its insulated TO-220 FP package, lowest R_DS(on) × Q_g FOM in its class, and integrated isolation-making it optimal for new designs targeting high efficiency, safety compliance, and compact thermal solutions.

Availability

IPA50R650CEXKSA2 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV main power stages, and indoor LED drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA50R650CEXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CE product line, engineered specifically for cost-sensitive consumer and lighting applications where high efficiency, ease of use, and reliability must be achieved without premium pricing.

FAQ

What is the maximum recommended gate resistor value for IPA50R650CEXKSA2 in a 100 kHz PFC stage?

Based on the 15 nC Q_g and 3 Ω internal gate resistance, a 5.3 Ω external gate resistor is validated in the datasheet for 400 V, 2.3 A switching. For 100 kHz PFC, 4.7–6.8 Ω balances switching loss reduction and EMI control without compromising dv/dt immunity. Lower values increase peak gate current and risk ringing; higher values extend switching times and raise conduction loss.

Does IPA50R650CEXKSA2 require a gate resistor on the source side for paralleling?

Yes-the datasheet explicitly recommends ferrite beads on each gate or separate totem-pole drivers when paralleling. This mitigates gate loop imbalance and prevents current hogging due to parameter spread and layout asymmetry. A single shared gate resistor is insufficient; individual gate termination preserves commutation ruggedness and thermal balance across parallel devices.

Can IPA50R650CEXKSA2 replace IPA50R750CE in an existing design?

Yes, with minor layout review: both share identical PG-TO220 FP package, pinout, and thermal footprint. The 0.65 Ω R_DS(on) (vs. 0.75 Ω) reduces conduction loss by ~13 %, lowering junction temperature by up to 8 °C at full load. No gate drive changes are needed, but verify SOA margins under worst-case avalanche conditions due to higher peak current capability.

Is the body diode suitable for synchronous rectification in a 65 kHz flyback?

No-the body diode has 162 ns t_rr and 1 µC Q_rr, making it unsuitable for synchronous rectification above 30 kHz. It is designed for freewheeling and clamping, not high-frequency bidirectional conduction. For SR, use a dedicated low-Q_rr Schottky or GaN FET; this MOSFET's strength lies in primary-side switching, not secondary-side rectification.