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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA600N25NM3SXKSA1

Name: IPA600N25NM3SXKSA1
Brand: Infineon Technologies
SKU: IPA600N25NM3SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA600N25NM3SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA600N25NM3SXKSA1.pdf

Description:: MOSFET N-CH 250V 15A TO220

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Product details

Overview

IPA600N25NM3SXKSA1 from Infineon Technologies is a 250 V, 15 A N-channel enhancement-mode MOSFET in PG-TO220FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It features 60 mΩ max R_DS(on), 22 nC total gate charge (Q_G), 46 nC output charge (Q_OSS), and 210 mJ single-pulse avalanche energy - optimized for high-frequency switching and synchronous rectification in industrial SMPS.

For engineers reviewing the IPA600N25NM3SXKSA1 datasheet, IPA600N25NM3SXKSA1 pinout, IPA600N25NM3SXKSA1 application, or IPA600N25NM3SXKSA1 equivalent, key selection criteria include its 3.9 °C/W junction-to-case thermal resistance, 1800–2300 pF input capacitance, 100% avalanche-tested ruggedness, and OptiMOSTM 3 process enabling low gate-charge × R_DS(on) figure-of-merit.

Technical Context

This device employs Infineon's OptiMOSTM 3 silicon technology to deliver enhanced switching efficiency at 250 V blocking voltage. Its gate threshold voltage (2–4 V) supports standard 10 V gate drive, while the 4.3 V gate plateau ensures stable Miller region control during hard switching.

The integrated body diode exhibits 0.87–1.2 V forward voltage at 15 A and 127 ns reverse recovery time under 100 V/12 A conditions, making it suitable for freewheeling paths where controlled diode conduction and fast turn-off are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	250 V - maximum drain-source blocking voltage for DC/peak operation in 200–240 VAC input SMPS and motor drive half-bridges
R_DS(on), max	60 mΩ at V_GS = 10 V, I_D = 15 A - enables <1.5 W conduction loss at full load in 15 A continuous applications
Q_G	22–29 nC - determines gate driver current requirement (~1.1 A peak for 20 ns rise time with 1.6 Ω external resistor)
Q_OSS	46 nC - directly impacts turn-off energy loss and snubber design in hard-switched topologies
E_AS	210 mJ - quantifies single-pulse avalanche robustness for inductive load switching without external clamping
R_thJC	3.9 °C/W - defines minimum heatsink thermal resistance needed to maintain T_j ≤ 175 °C at 38 W P_tot
C_iss	1800–2300 pF - sets high-frequency gate drive impedance and influences EMI filter sizing

Pinout & Package

Package: PG-TO220FP (FullPAK), thermally enhanced through-hole variant with isolated drain tab and bent leads for PCB mounting. Pin 2 is internally connected to the drain and metal tab; Pin 1 is gate; Pin 3 is source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring low-impedance 10 V drive; sensitive to ESD and layout-induced ringing
Pin 2	Drain	High-voltage power node tied to internal die drain and exposed metal tab - must be electrically isolated from heatsink unless using insulating pad
Pin 3	Source	Power return path and reference for gate drive; connects to PCB ground plane or low-side switch node

Key Features

Feature	Design Value
OptiMOSTM 3 process	Delivers industry-leading gate-charge × R_DS(on) FOM for reduced switching + conduction loss trade-off
100% avalanche tested	Guarantees single-pulse ruggedness up to 210 mJ without derating - eliminates need for external avalanche protection
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - supports lead-free reflow and environmentally regulated end equipment
Low Q_GD/Q_G ratio	~14% (3 nC / 22 nC) - improves controllability during Miller plateau and reduces risk of false turn-on in high-dV/dt environments

Applications

Industrial Switch-Mode Power Supplies

Motor Drive Half-Bridge Outputs

Use Scenario: Primary-side switching in 300–500 W telecom and server PSUs with universal AC input and active clamp or LLC topology.

IC Role / Device Role / Timing Role: High-side or low-side main switch handling 100–200 kHz switching with synchronous rectification support.

Use Value: 60 mΩ R_DS(on) and 22 nC Q_G enable >94% efficiency at full load while maintaining thermal margin below 100 °C case temperature.

Use Scenario: Low-voltage (<250 V bus) BLDC or stepper motor inverters in factory automation drives and HVAC blowers.

IC Role / Device Role / Timing Role: Phase-leg switching element operating in 6–20 kHz PWM with integrated body diode conducting freewheel current.

Use Value: 127 ns t_rr and 604 nC Q_rr minimize diode switching loss and commutation noise during forced-commutated transitions.

DC-DC Boost Converters

Uninterruptible Power Supply (UPS) Inverters

Use Scenario: 48 V–400 V boost stage in solar microinverters and battery energy storage systems.

IC Role / Device Role / Timing Role: Main power switch subjected to repetitive 100–300 kHz hard switching with high dI/dt stress.

Use Value: 210 mJ E_AS withstands inductive kickback during overcurrent events without failure - critical for field-replaceable reliability.

Use Scenario: Output H-bridge stage in 1–3 kVA line-interactive UPS delivering clean 50/60 Hz sine wave under battery mode.

IC Role / Device Role / Timing Role: Low-side switching device in push-pull or full-bridge configuration with bidirectional current capability via body diode.

Use Value: 15 A continuous I_D and 15 A diode I_S rating allow symmetrical conduction in both directions - simplifying gate drive sequencing and reducing component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FD	500 V rating, 0.22 Ω R_DS(on), TO-220FP package, no Q_OSS spec provided	Higher voltage margin but 3.7× higher conduction loss at 15 A - unsuitable for high-current 250 V designs	Select only if system requires >400 V blocking; avoid for efficiency-critical 250 V SMPS
IRFP4668PBF	200 V rating, 52 mΩ R_DS(on), TO-247AC package, Q_G = 115 nC - 5.2× higher gate charge	Lower voltage rating limits use to ≤180 V bus; excessive Q_G increases driver loss and EMI in >100 kHz designs	Consider only for lower-frequency (<60 kHz), lower-bus-voltage applications where gate drive simplicity outweighs efficiency

Compared with STP20NM50FD and IRFP4668PBF, IPA600N25NM3SXKSA1 uniquely balances 250 V rating, ultra-low Q_G×R_DS(on), and guaranteed avalanche performance - making it the optimal choice for compact, high-efficiency, high-reliability 200–250 V switching stages.

Availability

IPA600N25NM3SXKSA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, motor drive half-bridge outputs, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA600N25NM3SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 3 family - engineered specifically for high-frequency, high-efficiency power conversion in industrial and renewable energy systems where low switching loss and ruggedness are mandatory.

FAQ

Is IPA600N25NM3SXKSA1 suitable for synchronous rectification?

Yes. Its low 60 mΩ R_DS(on), fast 8 ns fall time, and 46 nC Q_OSS make it well-suited for synchronous rectifier roles in LLC and resonant converters. The body diode's 127 ns t_rr and low Q_rr further reduce reverse recovery loss when used in forced-commutated configurations.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 10 A continuous drain current at T_C = 100 °C with V_GS = 10 V. This derating reflects thermal limits of the PG-TO220FP package and ensures safe operation within the 175 °C maximum junction temperature under sustained load.

Does IPA600N25NM3SXKSA1 require a gate resistor for stability?

Yes. A 1.6 Ω external gate resistor is used in the datasheet's switching time test condition. This value balances turn-on speed against gate oscillation and shoot-through risk. Layout-dependent parasitics may require adjustment between 1–5 Ω depending on driver strength and PCB trace inductance.

Can this MOSFET replace older OptiMOSTM 2 devices in existing designs?

Yes, with validation. IPA600N25NM3SXKSA1 offers improved R_DS(on) and Q_G over OptiMOSTM 2 equivalents like IPA60R280E6, but gate threshold (2–4 V) and SOA curves differ. Thermal and dynamic behavior must be verified in-system, especially under avalanche or high-di/dt conditions.

IPA600N25NM3SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 89µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPA600N25NM3SXKSA1 FAQ

1.How can I place an order for IPA600N25NM3SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA600N25NM3SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA600N25NM3SXKSA1 reliable?

The price and inventory of IPA600N25NM3SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA600N25NM3SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA600N25NM3SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA600N25NM3SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA600N25NM3SXKSA1?

IPA600N25NM3SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA600N25NM3SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA600N25NM3SXKSA1?

For technical support, including IPA600N25NM3SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA600N25NM3SXKSA1 requirements.

6.How does Aetrix verify that IPA600N25NM3SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA600N25NM3SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA600N25NM3SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA600N25NM3SXKSA1?

All IPA600N25NM3SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA600N25NM3SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA600N25NM3SXKSA1 part is unused and in its original packaging.

Return procedure for IPA600N25NM3SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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