My Inquiry
My Account
Infineon Technologies IPA60R099C7XKSA1
- Part No.:
- IPA60R099C7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IPA60R099C7XKSA1.pdf
- Description:
- MOSFET N-CH 600V 12A TO220-FP
- Quantity:
- Payment:
- Shipping:
Inventory:117
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPA60R099C7XKSA1 from Infineon Technologies is a 600 V superjunction N-channel power MOSFET in PG-TO220 FP package, featuring 99 mΩ max RDS(on), 42 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency switching device in PFC and LLC resonant converters for server, telecom, and solar inverters.
For engineers reviewing the IPA60R099C7XKSA1 datasheet, IPA60R099C7XKSA1 pinout, IPA60R099C7XKSA1 application, or IPA60R099C7XKSA1 equivalent, key selection criteria include RDS(on)×Eoss figure-of-merit, body diode commutation speed (360 A/µs), and thermal resistance (3.79 °C/W junction-to-case).
Technical Context
This CoolMOS™ C7 device implements a charge-compensated superjunction structure enabling sub-1 Ω·mm² RDS(on)×A performance. Its optimized cell layout delivers low Qg (42 nC) and Eoss (4.95 µJ at 400 V), supporting hard- and soft-switching topologies up to 1 MHz without efficiency penalty.
The integrated body diode exhibits 350 ns reverse recovery time and 27 A peak reverse recovery current under 100 A/µs di/dt stress. Gate plateau voltage is fixed at 5.0 V, ensuring stable turn-on behavior across temperature and load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V maximum blocking voltage - supports 400 V DC bus designs with 50% safety margin for transient overvoltage |
| RDS(on),max | 99 mΩ at Tj = 150°C - enables compact heatsink sizing in 3–5 kW PFC stages |
| Qg,typ | 42 nC at VDD = 400 V - reduces gate driver power loss and allows use of low-cost 1-A drivers |
| Eoss@400V | 4.95 µJ - lowers turn-off energy loss, critical for >300 kHz LLC operation |
| dv/dt ruggedness | 120 V/ns - prevents false turn-on during fast voltage transients in high-side configurations |
| Body diode dI/dt | 360 A/µs - sustains high-current commutation in synchronous rectification and ZVS circuits |
| Tj,max | 150°C - qualified per JEDEC for industrial applications with extended lifetime at elevated ambient |
Pinout & Package
IPA60R099C7XKSA1 uses the PG-TO220 FP (FullPAK) package with isolated drain tab. The plastic body provides creepage/clearance compliant with 2500 Vrms insulation rating. Mounting torque: 50 Ncm (M2.5 screws).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input terminal | Low-impedance gate accepts standard 10–15 V logic-level drive; RG = 0.82 Ω limits ringing |
| Pin 2 (Drain) | High-voltage power output | Internally connected to metal tab - requires insulated mounting for non-ground-referenced topologies |
| Pin 3 (Source) | Power return and reference node | Serves as gate drive reference and current sense point; low-inductance path critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction architecture | RDS(on) × A < 1 Ω·mm² - achieves highest power density among 600 V MOSFETs in TO-220 footprint |
| Optimized gate charge profile | Qgd/Qg = 33% - balances switching speed and voltage overshoot in hard-switched PFC |
| Enhanced body diode | trr = 350 ns, Qrr = 4.4 µC - reduces dead-time losses and EMI in bridge-leg configurations |
| Thermal robustness | RthJC = 3.79 °C/W - enables 33 W continuous dissipation at TC = 25°C without forced cooling |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Active clamp forward or asymmetric half-bridge PFC stage in 3 kW redundant PSU modules. IC Role / Device Role / Timing Role: Primary switch handling 12 A RMS input current at 100 kHz with zero-voltage switching assist. Use Value: 99 mΩ RDS(on) and 42 nC Qg reduce conduction + switching losses by 18% vs. prior-gen C6 devices at full load. |
Use Scenario: Boost PFC front-end in -48 V telecom rectifiers operating at 65 kHz with 96% efficiency target. IC Role / Device Role / Timing Role: High-side switch in interleaved dual-phase boost converter with 150 V AC input range. Use Value: 120 V/ns dv/dt rating eliminates need for external snubbers, simplifying BOM and layout. |
| Solar Inverter DC-DC | UPS Inverter Stage |
Use Scenario: Isolated DC-DC stage in string inverters converting 1000 V DC to 400 V bus for H-bridge inverter. IC Role / Device Role / Timing Role: Primary side switch in phase-shifted full-bridge topology operating at 120 kHz. Use Value: 4.95 µJ Eoss enables ZVS down to 30% load, maintaining >98% conversion efficiency across wide power range. |
Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 V AC from 380 V DC bus. IC Role / Device Role / Timing Role: Low-side switch in 16 kHz PWM inverter leg with active short-circuit protection. Use Value: 360 A/µs body diode dI/dt withstands fault currents during IGBT desaturation events without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | RDS(on) = 110 mΩ, Qg = 54 nC, Eoss = 6.2 µJ - higher switching loss at >100 kHz | Valid for 65 kHz PFC but not recommended above 80 kHz due to slower turn-off | Prefer for cost-sensitive 1–2 kW telecom supplies where efficiency >95% suffices |
| IXFH60N60X | RDS(on) = 95 mΩ, Qg = 120 nC, no specified dv/dt rating - higher gate drive loss | Requires 2-A gate driver; unsuitable for high-frequency LLC without active Miller clamp | Select only when lowest RDS(on) dominates over switching frequency and driver complexity |
Compared with STW62N60M2 and IXFH60N60X, IPA60R099C7XKSA1 delivers best-in-class RDS(on)×Eoss (4.15 mΩ·µJ) and guaranteed 120 V/ns dv/dt, making it optimal for >100 kHz PFC and resonant converters where system-level efficiency and reliability are prioritized over gate drive simplicity.
Availability
IPA60R099C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply and JEDEC-qualified industrial reliability.
Supply support for IPA60R099C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency SMPS topologies including PFC, LLC, and phase-shifted full-bridge converters in computing, telecom, and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IPA60R099C7XKSA1 supports 8 A continuous drain current at TC = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limitations of the PG-TO220 FP package and ensures reliable operation within the 150°C maximum junction temperature limit.
Does this MOSFET require a gate resistor for stability in hard-switching applications?
Yes - a 5.3 Ω gate resistor is used in the datasheet's switching time test circuit (Table 9). For hard-switched PFC, a 10–22 Ω resistor is recommended to dampen ringing caused by PCB trace inductance and internal gate resistance (0.82 Ω), especially when driving from low-impedance sources.
Can IPA60R099C7XKSA1 be paralleled with identical units?
Yes, but with specific layout requirements: each unit must have individual ferrite beads on its gate line (as noted in the datasheet), and separate totem-pole drivers are strongly advised. Matching of VGS(th) (3.0–4.0 V) and RDS(on) tolerance ensures balanced current sharing across parallel devices.
What is the rated insulation withstand voltage and how is it implemented?
The device is rated for 2500 Vrms insulation withstand voltage for 1 minute at 25°C, achieved via reinforced isolation between the drain-connected metal tab and the plastic package body. This meets IEC 60747-17 requirements for basic insulation in industrial power equipment.
IPA60R099C7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1819 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-FP
IPA60R099C7XKSA1 FAQ
1.How can I place an order for IPA60R099C7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPA60R099C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPA60R099C7XKSA1 reliable?
The price and inventory of IPA60R099C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R099C7XKSA1 is usually 5 days.
3.What payment methods are accepted for IPA60R099C7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R099C7XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPA60R099C7XKSA1?
IPA60R099C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPA60R099C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPA60R099C7XKSA1?
For technical support, including IPA60R099C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R099C7XKSA1 requirements.
6.How does Aetrix verify that IPA60R099C7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPA60R099C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R099C7XKSA1 meets industry standards.
7.What is the process for return or replacement of IPA60R099C7XKSA1?
All IPA60R099C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R099C7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPA60R099C7XKSA1 part is unused and in its original packaging.
Return procedure for IPA60R099C7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPA60R099C7XKSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
