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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R099P6XKSA1

Name: IPA60R099P6XKSA1
Brand: Infineon Technologies
SKU: IPA60R099P6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA60R099P6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R099P6XKSA1.pdf

Description:: MOSFET N-CH 600V 37.9A TO220-FP

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Product details

Overview

IPA60R099P6XKSA1 from Infineon Technologies is a 600 V, 99 mΩ superjunction MOSFET in TO-220 FullPAK package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 32.9 A continuous diode current, 109 A pulsed drain current, and 8.8 µJ output energy at 400 V, enabling compact, cooler-running server power supplies and telecom rectifiers.

For engineers reviewing the IPA60R099P6XKSA1 datasheet, IPA60R099P6XKSA1 pinout, IPA60R099P6XKSA1 application, or IPA60R099P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. Q_g trade-off (70 nC total gate charge), dv/dt ruggedness (100 V/ns), body diode commutation capability (300 A/µs), and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ P6 device implements a charge-compensated superjunction structure with trench-gate design, delivering low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss. Its gate threshold voltage is tightly specified at 3.5–4.5 V, and plateau voltage remains stable at 6.1 V under 400 V switching conditions.

The integrated body diode supports fast recovery (t_rr = 470 ns, Q_rr = 9 µC) and high di/dt (300 A/µs), making it suitable for resonant topologies where reverse conduction and soft switching are critical. Thermal resistance from junction-to-case is 3.65 °C/W in TO-220FP package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., PFC, telecom rectifiers).
R_DS(on),max	99 mΩ at T_j = 150°C - Enables low conduction loss in high-current, thermally constrained TO-220FP layouts.
Q_g,typ	70 nC - Determines gate drive power and switching speed; compatible with standard 13 V gate drivers without excessive losses.
E_oss@400V	8.8 µJ - Reduces turn-on switching loss in hard-switched converters operating near 400 V input.
I_D,pulse	109 A - Supports peak load handling in short-duration surge events (e.g., startup, overload) without thermal runaway.
dv/dt ruggedness	100 V/ns - Ensures reliable operation under fast voltage transients in high-noise industrial environments.
Body diode di/dt	300 A/µs - Allows robust commutation in LLC and ZVS-PWM circuits without parasitic turn-on or oscillation.

Pinout & Package

IPA60R099P6XKSA1 is housed in a TO-220 FullPAK (TO-220FP) package with insulated case and creepage-enhanced leadframe. The package provides 2500 V_rms insulation withstand voltage and 50 Ncm mounting torque rating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires ≤20 V static and ≤30 V dynamic voltage per JEDEC spec.
Pin 2 (Drain)	High-voltage power terminal	Connected to AC line or high-side switch node; electrically tied to insulated tab in FullPAK.
Pin 3 (Source)	Power return and reference	Serves as common reference for gate drive and current sensing; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with 99 mΩ R_DS(on), reducing conduction loss by ~35% vs. planar MOSFETs of same die size.
Low E_oss and Q_g	8.8 µJ E_oss and 70 nC Q_g jointly minimize total switching loss in 65–100 kHz PFC stages.
High dv/dt ruggedness	100 V/ns rating prevents false triggering during fast voltage transitions in high-frequency bridge legs.
Industrial-grade qualification	Qualified per JESD22-A108 (temperature cycling), J-STD-020 (reflow), and JESD22-A110 (highly accelerated stress test).
Insulated TO-220FP package	2500 V_rms isolation eliminates need for heatsink insulation washers in Class I safety designs.

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active PFC front-end in 1–3 kW redundant server PSUs operating from universal AC input.

IC Role / Device Role / Timing Role: High-side switching element in boost converter topology, switching at 65–100 kHz.

Use Value: 99 mΩ R_DS(on) and 8.8 µJ E_oss reduce total losses by 1.2 W vs. prior-gen CoolMOS™ P5, improving efficiency to >98.5% at full load.

Use Scenario: Primary-side switch in 48 V telecom rectifier with hold-up time ≥20 ms.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in forward or half-bridge configuration.

Use Value: 109 A pulsed current rating and 300 A/µs body diode di/dt support reliable operation during transient overloads and hot-swap events.

LCD TV Backlight Inverter

Industrial UPS Inverter Stage

Use Scenario: Resonant half-bridge driver for CCFL or LED backlight in large-format LCD TVs.

IC Role / Device Role / Timing Role: Low-loss switching device in ZVS-controlled resonant tank.

Use Value: 470 ns reverse recovery time and 9 µC Q_rr minimize dead-time losses and EMI generation during zero-voltage switching transitions.

Use Scenario: Output H-bridge switch in online double-conversion UPS with 230 V AC output.

IC Role / Device Role / Timing Role: 600 V-rated power switch handling bidirectional current in inverter leg.

Use Value: 150 °C max junction temperature and 100 V/ns dv/dt ruggedness ensure reliability under grid disturbance conditions (e.g., voltage spikes, harmonics).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099P6	Same die, TO-220 (non-FullPAK) package; no internal insulation; R_thJC = 0.45 °C/W vs. 3.65 °C/W.	Requires external heatsink isolation; suited for cost-sensitive, non-safety-critical industrial SMPS.	Select when board-level creepage clearance allows uninsulated mounting and thermal budget permits higher case temp rise.
IPW60R099P6	Same die, TO-247 package; higher power dissipation (278 W vs. 34 W); R_thJC = 0.45 °C/W; no internal isolation.	Used in high-power PFC modules (>5 kW); needs larger PCB area and mechanical mounting provisions.	Choose for systems requiring >100 W continuous dissipation and where TO-247 footprint and thermal performance outweigh size constraints.

Compared with IPP60R099P6 and IPW60R099P6, IPA60R099P6 trades lower thermal performance for built-in safety isolation and compact TO-220FP form factor-ideal for space-constrained, safety-certified AC/DC adapters and telecom modules.

Availability

IPA60R099P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and industrial UPS systems requiring stable component supply, JEDEC industrial qualification, and reinforced insulation.

Supply support for IPA60R099P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ P6 series was engineered to deliver best-in-class R_DS(on) × Q_g FOM for 600 V superjunction MOSFETs in high-efficiency, high-density AC/DC and DC/DC conversion systems.

FAQ

What is the maximum continuous drain current for IPA60R099P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 24.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature, limiting conduction loss to maintain T_j ≤ 150°C.

Does IPA60R099P6XKSA1 require a negative gate voltage for reliable turn-off?

No. The device specifies a gate-source voltage range of –20 V to +20 V (static) and –30 V to +30 V (dynamic). A gate drive of 0 V to 13 V is sufficient for full enhancement and safe turn-off; negative bias is not required for stability or noise immunity in typical applications.

Can IPA60R099P6XKSA1 be paralleled with identical units without gate resistors?

No. The datasheet explicitly recommends using ferrite beads on each gate or separate totem-pole drivers when paralleling. Without such measures, unequal gate loop inductance can cause dynamic current imbalance and thermal runaway due to positive temperature coefficient of R_DS(on).

Is the TO-220FP package of IPA60R099P6XKSA1 compatible with standard TO-220 footprints?

No. Although outline dimensions are similar, the TO-220FP (FullPAK) has an insulated tab and modified lead spacing. Its leads are spaced for surface-mount or through-hole mounting with isolation requirements, and it cannot be substituted into a standard TO-220 land pattern without verifying creepage/clearance and thermal pad layout.

IPA60R099P6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 37.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.21mA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3330 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA60R099P6XKSA1 FAQ

1.How can I place an order for IPA60R099P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R099P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R099P6XKSA1 reliable?

The price and inventory of IPA60R099P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R099P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R099P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R099P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R099P6XKSA1?

IPA60R099P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R099P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R099P6XKSA1?

For technical support, including IPA60R099P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R099P6XKSA1 requirements.

6.How does Aetrix verify that IPA60R099P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R099P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R099P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R099P6XKSA1?

All IPA60R099P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R099P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R099P6XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R099P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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