Infineon Technologies IPA60R120C7XKSA1

Overview

IPA60R120C7XKSA1 from Infineon Technologies is a 600 V, 120 mΩ superjunction N-channel power MOSFET in PG-TO220 FP package, featuring 34 nC total gate charge, 4 µJ Eoss at 400 V, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server and telecom power supplies.

For engineers reviewing the IPA60R120C7XKSA1 datasheet, IPA60R120C7XKSA1 pinout, IPA60R120C7XKSA1 application, or IPA60R120C7XKSA1 equivalent, key selection criteria include RDS(on)×Eoss figure-of-merit, body diode commutation speed (360 A/µs), continuous current rating (31 A @ Tj < 150°C), and TO-220 FP drain-tab isolation for thermal and safety compliance.

Technical Context

This CoolMOS™ C7 device implements a charge-compensated superjunction structure enabling sub-1 Ω·mm² RDS(on)×A performance. Its optimized cell design delivers low Qg (34 nC) and ultra-low Eoss (4 µJ @ 400 V), directly reducing switching losses in high-frequency PFC and LLC stages.

The integrated body diode supports fast, controlled commutation with 310 ns trr and 360 A/µs di/dt capability, while the 120 V/ns dv/dt rating ensures robustness against parasitic turn-on in high-dV/dt environments typical of bridge-based topologies.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab (Pin 2), non-isolated source (Pin 3), gate (Pin 1). Drain tab provides direct thermal path to heatsink while maintaining electrical isolation per IEC 60950-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP60N120FIAG and IXFH60N60X3, IPA60R120C7XKSA1 delivers superior system efficiency in high-frequency resonant converters due to its industry-leading R_DS(on)×E_oss FOM and guaranteed 360 A/µs body diode commutation capability-critical for reliable ZVS in LLC and phase-shifted topologies.

Availability

IPA60R120C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar DC-DC optimizers, and industrial UPS inverters requiring stable component supply and JEDEC-qualified industrial-grade reliability.

Supply support for IPA60R120C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ C7 product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion systems operating above 100 kHz, emphasizing reduced switching loss and enhanced ruggedness in demanding industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current for IPA60R120C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 11 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This rating reflects thermal limitation under steady-state conduction; actual usable current depends on PCB copper area, heatsink interface, and ambient airflow.

Does IPA60R120C7XKSA1 require a gate resistor for stability in hard-switching PFC applications?

Yes-Infineon recommends a 5.3 Ω gate resistor (as used in characterization conditions) to suppress oscillation and control turn-on/turn-off slew rates. Lower values risk ringing and EMI; higher values increase switching losses without improving reliability in this device's optimized gate structure.

Can IPA60R120C7XKSA1 be paralleled with identical units without external gate ferrite beads?

No-the datasheet explicitly states that ferrite beads on each gate or separate totem-pole drivers are generally recommended for paralleling. Without them, mismatched gate delays and current imbalance may cause thermal runaway, especially under high di/dt conditions.

What is the insulation withstand voltage rating and test condition for IPA60R120C7XKSA1?

The device has a 2500 V_rms insulation withstand voltage rating, tested for 1 minute at T_C = 25°C between drain tab and all other terminals. This meets reinforced insulation requirements per IEC 60950-1 and supports safe operation in Class I AC-DC power supplies.