Infineon Technologies IPA60R125C6XKSA1

Overview

IPA60R125C6XKSA1 from Infineon Technologies is a 600 V, 125 mΩ CoolMOS™ C6 superjunction MOSFET optimized for hard-switched and resonant SMPS topologies including LLC and PFC stages. It delivers 14 A continuous drain current at T_c = 100 °C, features 2.7 nC gate charge, and achieves ultra-low R_DS(on) × Q_g figure-of-merit for high-efficiency 80 PLUS Titanium/Platinum server and telecom power supplies.

For engineers reviewing the IPA60R125C6XKSA1 datasheet, IPA60R125C6XKSA1 pinout, IPA60R125C6XKSA1 application, or IPA60R125C6XKSA1 equivalent, key selection criteria include its 600 V V_DSS, 125 mΩ R_DS(on) at V_GS = 10 V, 2.7 nC Q_g, 14 A I_D (cont.), and 0.95 °C/W R_thJC thermal resistance - all critical for high-density, high-efficiency AC-DC conversion designs.

Technical Context

This device implements Infineon's CoolMOS™ C6 technology based on superjunction charge compensation, enabling significantly lower conduction and switching losses than previous generations. Its gate threshold voltage of 3.2 V (typ.) and low gate charge support fast, clean switching with standard 12 V gate drivers while maintaining robust noise immunity in high dv/dt environments.

The MOSFET is optimized for unipolar operation in high-voltage primary-side switching applications. Its 1.2 nF output capacitance (C_oss) and 1.0 nF reverse transfer capacitance (C_rss) are tuned for soft-switching performance in resonant converters, and its 0.95 °C/W junction-to-case thermal resistance enables compact heatsink integration in space-constrained 1–3 kW power modules.

Key Specifications

Pinout & Package

IPA60R125C6XKSA1 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct heatsink mounting without isolation hardware. The plastic body provides creepage/clearance compliance for reinforced insulation in Class I equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW60N60DM6 and IXFH60N60X3, IPA60R125C6XKSA1 offers superior R_DS(on) × Q_g efficiency metric and lower thermal resistance in a smaller TO-220FP form factor - making it optimal for space- and thermally constrained high-efficiency server and telecom power supplies.

Availability

IPA60R125C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPA60R125C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

The CoolMOS™ C6 series was developed specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing low R_DS(on) × Q_g, ruggedness, and thermal performance in standardized packages.

FAQ

What is the maximum continuous drain current for IPA60R125C6XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 14 A when the case temperature is maintained at 100 °C, as specified in the datasheet under DC operating conditions with proper heatsinking. This rating assumes TO-220FP mounting on a 10 cm² copper pad with 1 oz. thickness and no forced airflow.

Does IPA60R125C6XKSA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed and suppress oscillation. A 5.6 Ω non-inductive resistor is recommended for most 100–200 kHz PFC and LLC applications, balancing EMI reduction and switching loss. Values below 3.3 Ω increase dv/dt stress; above 10 Ω degrade efficiency.

Can IPA60R125C6XKSA1 be used in avalanche mode, and what is its rated single-pulse avalanche energy?

Yes - it is 100% tested for unclamped inductive switching (UIS) with a rated single-pulse avalanche energy of 75 mJ at T_j = 25 °C. This enables reliable operation during inductive load turn-off transients without external snubbers in properly designed PFC and motor drive circuits.

Is the TO-220FP package electrically insulated, and what is its creepage distance?

The TO-220FP package features an insulated metal tab with reinforced insulation rated for 4000 V_AC isolation. Its minimum creepage distance is 4.0 mm between drain (tab) and source/gate pins, meeting IEC 60950-1 and IEC 62368-1 requirements for Class I equipment with basic insulation.