Infineon Technologies IPA60R125CFD7XKSA1

Overview

IPA60R125CFD7XKSA1 from Infineon Technologies is a 600 V, 125 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 36 nC typical gate charge, 0.47–0.94 µC reverse recovery charge (Qrr), 1300 A/µs diF/dt ruggedness, and is qualified for industrial applications per JEDEC. It targets phase-shift full-bridge and LLC resonant converters in server power supplies and EV charging stations.

For engineers reviewing the IPA60R125CFD7XKSA1 datasheet, IPA60R125CFD7XKSA1 pinout, IPA60R125CFD7XKSA1 application, or IPA60R125CFD7XKSA1 equivalent, key selection criteria include Qrr performance under 100 A/µs diF/dt stress, RDS(on)×Qg figure-of-merit below 4.5 Ω·nC, hard commutation robustness up to 1300 A/µs, and thermal resistance of 3.92 °C/W junction-to-case.

Technical Context

This device implements Infineon's CoolMOS™ CFD7 superjunction architecture optimized for soft-switching topologies. Its internal fast-recovery body diode enables ZVS operation without external SiC diodes, while reduced Qg (36 nC) and ultra-low Eoss (4.1 µJ at 400 V) minimize switching losses in high-frequency LLC converters.

The MOSFET supports 66 A pulsed drain current and withstands 120 V/ns dv/dt in MOSFET mode and 70 V/ns in diode mode. Its 1300 A/µs diF/dt rating and 78 mJ single-pulse avalanche energy ensure reliable hard commutation in asymmetric half-bridge configurations common in telecom rectifiers.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting, drain-connected tab (pin 2). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency resonant switching applications.

Compared with IPA60R125P7XKSA1, this part adds critical diF/dt robustness for hard commutation; versus IPW60R099C7FKSA1, it trades 24 mΩ higher R_DS(on) for 12 nC lower Q_g and TO-220 FP form factor-ideal for space-constrained 1–3 kW resonant converters.

Availability

IPA60R125CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, JEDEC-qualified reliability, and high-volume production continuity.

Supply support for IPA60R125CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching power conversion topologies-including LLC, phase-shifted full-bridge, and active-clamp forward-where low Qrr, high diF/dt ruggedness, and ZVS capability are mandatory.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 5.3 Ω gate resistor is validated in the datasheet test circuit for 400 V bus operation, yielding 31 ns turn-on delay and 66 ns turn-off delay. Values above 10 Ω increase switching time and risk incomplete ZVS at >300 kHz; values below 2.2 Ω may cause overshoot due to PCB trace inductance interacting with 8.8 Ω intrinsic gate resistance.

Can IPA60R125CFD7XKSA1 be paralleled for higher current handling?

Yes, but gate drive must use individual ferrite beads (100 Ω @ 100 MHz) on each gate line or separate totem-pole drivers to prevent dynamic current imbalance. The datasheet specifies this requirement due to parameter spread in Qg and threshold voltage across units, especially under hard commutation conditions.

Is the drain tab electrically isolated from the package mount surface?

No-the drain (pin 2) is internally bonded to the metal tab, which serves as both the high-side power terminal and mechanical heatsink interface. Electrical isolation requires insulating thermal pads or ceramic washers between tab and heatsink, as confirmed in Package Outline drawing PG-TO220 FP Rev. 2.1.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA curve limits continuous DC operation to ≤ 5.2 A at 400 V, or ≤ 12 A at 100 V. Pulse operation up to 66 A is permitted for ≤ 100 µs at this temperature, as defined in Figure 2 and Figure 3 of the datasheet under DC and pulse boundary conditions.