Infineon Technologies IPA60R160P6XKSA1

Overview

IPA60R160P6XKSA1 from Infineon Technologies is a 600 V, 160 mΩ superjunction N-channel power MOSFET in the CoolMOS™ P6 family, optimized for high-efficiency hard-switching and resonant topologies. It delivers 23.8 A continuous drain current at 25°C, 44 nC total gate charge, and 5.7 µJ output energy at 400 V, enabling compact, cooler-running PFC and SMPS stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R160P6XKSA1 datasheet, IPA60R160P6XKSA1 pinout, IPA60R160P6XKSA1 application, or IPA60R160P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven turn-off loss, dv/dt ruggedness (100 V/ns), and TO-220 FullPAK thermal interface suitability for convection-cooled industrial designs.

Technical Context

This device implements Infineon's sixth-generation superjunction architecture with optimized charge balancing for reduced R_DS(on) × Q_g figure-of-merit (FOM) and low E_oss. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (6.1 V) support standard 12 V gate drivers without level-shifting.

The integrated body diode exhibits 350 ns reverse recovery time and 500 A/µs commutation di/dt capability, enabling reliable operation in asymmetric half-bridge and LLC resonant converters where synchronous rectification is not used.

Key Specifications

Pinout & Package

IPA60R160P6XKSA1 uses the TO-220 FullPAK (PG-TO220FP) package: insulated plastic case with internal isolation barrier, 2500 V_rms insulation rating, and tab-connected drain for simplified heatsinking. Mounting torque: 50 N·cm (M2.5 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R160P6 and IPW60R160P6, IPA60R160P6XKSA1 trades off absolute power handling for certified 2500 V_rms isolation and compact TO-220FP form factor-making it optimal for space-constrained, safety-critical AC/DC adapters and medical-grade power supplies where creepage and thermal management coexist.

Availability

IPA60R160P6XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and industrial UPS inverter stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IPA60R160P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P6 product line was engineered specifically for high-efficiency, high-reliability AC/DC conversion in datacenter, telecom, and industrial power systems-emphasizing low E_oss, rugged dv/dt behavior, and JEDEC industrial qualification.

FAQ

What is the maximum continuous drain current for IPA60R160P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 15.0 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This derating reflects thermal limits of the TO-220 FullPAK package, which has a junction-to-case thermal resistance of 3.67 °C/W and a maximum junction temperature of 150°C.

Does IPA60R160P6XKSA1 require a negative gate voltage to prevent spurious turn-on?

No. The device achieves 100 V/ns dv/dt ruggedness without negative gate bias due to its enhanced gate oxide design and optimized charge distribution. Standard 0 V to +12 V gate drive is sufficient, simplifying driver circuitry and eliminating need for dual-rail supplies.

Can IPA60R160P6XKSA1 be paralleled with identical units in high-current PFC designs?

Yes, but gate drive must be carefully balanced: Infineon recommends using ferrite beads on each gate line or individual totem-pole drivers to suppress oscillation and ensure current sharing. Layout symmetry and matched trace inductance are mandatory per Application Note AN2015-07.

What is the insulation voltage rating and test condition for the TO-220 FullPAK package?

The insulation withstand voltage is 2500 V_rms, tested for 1 minute at 25°C case temperature with no breakdown or leakage exceeding 1 mA. This rating applies between drain (tab) and source (Pin 3), enabling use in Class I and Class II AC/DC converters without additional isolation barriers.