Infineon Technologies IPA60R170CFD7XKSA1

Overview

IPA60R170CFD7XKSA1 from Infineon Technologies is a 600 V, 170 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO220 FP package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 28 nC typical gate charge, 0.34 µC typical reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPA60R170CFD7XKSA1 datasheet, IPA60R170CFD7XKSA1 pinout, IPA60R170CFD7XKSA1 application, or IPA60R170CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, soft-switching dv/dt immunity, and thermal resistance (RthJC = 4.79 °C/W) for thermally constrained designs.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with integrated fast-recovery body diode, engineered specifically for zero-voltage switching (ZVS) operation. Its reduced Qg (28 nC typ) and best-in-class Qrr (0.34 µC typ at 400 V) minimize switching losses and diode-related ringing in resonant half/full-bridge topologies.

The device features enhanced diF/dt ruggedness (1300 A/µs) and reverse diode dv/dt rating (70 V/ns), enabling reliable hard commutation without external snubbers. Its RDS(on) × Eoss figure-of-merit is lowest in its voltage class, supporting compact, high-frequency (>100 kHz) power stages with improved thermal margin.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab, screw-mountable with M2.5 screws (50 Ncm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPW60R099CFD7 and STP60N170K6, IPA60R170CFD7XKSA1 offers optimal balance of switching efficiency (via low Qrr/Eoss), thermal performance (RthJC = 4.79 °C/W), and gate drive simplicity (28 nC), making it ideal for space-constrained, high-reliability resonant converters.

Availability

IPA60R170CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPA60R170CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CFD7 product line-engineered explicitly for soft-switching resonant topologies like LLC and PSFB, targeting highest efficiency, power density, and ruggedness in 1–10 kW AC/DC and DC/DC systems.

FAQ

What is the maximum continuous drain current for IPA60R170CFD7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 5 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This rating is limited by junction temperature (T_j,max = 150°C) and thermal resistance (R_thJC = 4.79 °C/W). Derating must be applied above 100°C case temperature per the power dissipation curve in Diagram 1.

Does IPA60R170CFD7XKSA1 require a gate resistor for stability in ZVS operation?

Yes-a gate resistor (typically 5–15 Ω) is recommended to dampen parasitic oscillation and control dV/dt during turn-on. The device's internal gate resistance is 10.9 Ω, but external series resistance improves EMI behavior and ensures robust ZVS transition across line/load variations, especially in high-frequency LLC designs.

Can IPA60R170CFD7XKSA1 be paralleled with identical units?

Yes, but with specific layout and gate drive precautions: use individual ferrite beads on each gate line or separate totem-pole drivers to suppress gate loop oscillation, ensure symmetrical PCB trace lengths, and match source inductance. Parallel operation is validated per Infineon's application note AN2019-04 for CFD7 devices.

Is the drain tab of IPA60R170CFD7XKSA1 electrically isolated?

Yes-the PG-TO220 FP package features an isolated drain tab (full isolation between drain and mounting surface), rated for 2500 V_rms insulation withstand voltage per minute at 25°C. This allows direct heatsink mounting without insulating pads in grounded-drain configurations, simplifying thermal design.