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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R1K0CEXKSA1

Name: IPA60R1K0CEXKSA1
Brand: Infineon Technologies
SKU: IPA60R1K0CEXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA60R1K0CEXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R1K0CEXKSA1.pdf

Description:: MOSFET N-CH 600V 6.8A TO220

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Product details

Overview

IPA60R1K0CEXKSA1 from Infineon Technologies is a 600 V, 1.0 Ω R_DS(on) max, 6.8 A continuous drain current superjunction MOSFET in TO-220FP FullPAK package, optimized for PFC and hard-switching PWM stages in consumer power supplies and indoor lighting. It features 13 nC total gate charge, 1.3 µJ E_oss at 400 V, and high commutation ruggedness for reliable operation in resonant topologies.

For engineers reviewing the IPA60R1K0CEXKSA1 datasheet, IPA60R1K0CEXKSA1 pinout, IPA60R1K0CEXKSA1 application, or IPA60R1K0CEXKSA1 equivalent, key selection criteria include its 650 V V_DS rating at T_j,max, low FOM (R_DS(on) × Q_g), 50 V/ns dv/dt ruggedness, and suitability for cost-sensitive high-efficiency AC-DC conversion.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking with significantly reduced conduction and switching losses versus planar MOSFETs. Its gate threshold voltage of 2.5–3.5 V and plateau voltage of 5.4 V support robust drive with standard 10 V gate drivers.

Designed for unidirectional high-side or low-side switching, it delivers 46 mJ single-pulse avalanche energy and withstands 2500 V_rms isolation voltage. The integrated body diode exhibits 220 ns reverse recovery time and 1.5 µC Q_rr, enabling use in quasi-resonant flyback and LLC converters without external diode replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Rated for 400 V DC bus applications with 50% margin against line transients in universal-input SMPS.
R_DS(on) max	1000 mΩ at T_j = 150 °C - Enables thermally stable 6.8 A continuous conduction in compact TO-220FP packages with 4.9 °C/W R_thJC.
Q_g typ	13 nC - Low gate drive power requirement supports efficient operation with standard gate drivers at >100 kHz switching frequencies.
E_oss @ 400 V	1.3 µJ - Reduces turn-off loss and enables soft-switching behavior in PFC boost and resonant converters.
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast voltage transitions in hard-switched topologies without spurious turn-on.
I_D,pulse	12 A - Supports peak-load handling in adapter and TV power supplies during startup or overload conditions.
V_GS(th)	2.5–3.5 V - Provides noise-immune turn-on threshold compatible with 3.3 V/5 V logic-level controllers.

Pinout & Package

TO-220FP FullPAK package with isolated tab (Drain-connected), 3-pin configuration. Mounting torque: 50 N·cm (M2.5 screws). Insulation withstand voltage: 2500 V_rms.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; 16 Ω internal gate resistance limits ringing and simplifies layout.
Pin 2 (Drain)	High-voltage power terminal	Connected to internal drain metallization and electrically isolated tab; rated for 600 V blocking.
Pin 3 (Source)	Power return / reference node	Serves as source connection and local ground reference for gate driver; low-inductance path critical for EMI control.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with 1.0 Ω R_DS(on), reducing conduction loss by ~40% vs. comparable planar MOSFETs.
Low E_oss and Q_g	1.3 µJ E_oss + 13 nC Q_g yields superior figure-of-merit for high-frequency PFC and QR flyback designs.
High commutation ruggedness	46 mJ single-pulse avalanche energy and 500 A/µs diode di/dt rating ensure reliability in hard-switched transitions.
Pb-free & halogen-free	Meets RoHS and JEDEC MSL-1 requirements; suitable for consumer-grade industrial production without special handling.
Standard grade qualification	Rated for −40 °C to +150 °C junction operation; validated for lighting and adapter applications per JEDEC JESD47.

Applications

LED Driver Power Stage

PC Silverbox PFC Boost

Use Scenario: Constant-current LED driver for indoor architectural lighting with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 1.0 Ω R_DS(on) minimizes conduction loss at 2–4 A output current; 50 V/ns dv/dt rating prevents false triggering during dimming transients.

Use Scenario: Active PFC stage in desktop PC power supply delivering 300–500 W at >95% efficiency.

IC Role / Device Role / Timing Role: Boost switch in critical conduction mode (CrCM) or transition-mode (TM) topology.

Use Value: 13 nC Q_g enables low-loss switching with minimal gate driver overhead; 1.3 µJ E_oss reduces turn-off loss at 400 V bus.

LCD TV Backlight Inverter

Universal Adapter Primary Switch

Use Scenario: Resonant half-bridge inverter driving CCFL or edge-lit LED backlight in 32–55″ LCD TVs.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter operating at 200–500 kHz.

Use Value: 220 ns t_rr and 1.5 µC Q_rr minimize diode recovery loss; 500 A/µs di/dt rating ensures clean zero-voltage switching transitions.

Use Scenario: Primary-side switch in 30–65 W universal-input USB-C PD adapter with QR flyback topology.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer during each switching cycle.

Use Value: 6.8 A I_D and 12 A I_D,pulse support burst-mode operation and surge immunity; TO-220FP package enables low-cost heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N1F32	R_DS(on) = 1.2 Ω, Q_g = 15 nC, E_oss = 1.8 µJ - higher conduction and switching loss.	Lower efficiency in high-frequency PFC; requires larger heatsink in same 6.8 A design.	Prefer when legacy STMicro design reuse is required and 2–3% efficiency loss is acceptable.
IPP60R1K0C6	Same R_DS(on) (1.0 Ω), but Q_g = 11 nC and E_oss = 1.1 µJ - slightly better switching performance.	Marginally improved light-load efficiency in QR flyback; identical thermal profile.	Choose for new designs targeting highest efficiency in <65 W adapters where gate drive loss is critical.

Compared with STP60N1F32, IPA60R1K0CEXKSA1 delivers lower conduction loss and better dv/dt immunity; versus IPP60R1K0C6, it trades 2 nC higher Q_g for broader availability and proven field reliability in lighting applications.

Availability

IPA60R1K0CEXKSA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC Silverbox PFC boost circuits, and universal adapter primary switches requiring stable component supply across multi-year production cycles.

Supply support for IPA60R1K0CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE family, engineered for cost-sensitive, high-efficiency AC-DC conversion in consumer and lighting applications-balancing performance, ruggedness, and manufacturability.

FAQ

Is IPA60R1K0CEXKSA1 suitable for paralleling in high-current PFC designs?

Yes, but with specific layout precautions: gate ferrite beads or individual totem-pole drivers are recommended per Infineon's application note AN2015-04 to suppress oscillation and ensure current sharing. Matching R_DS(on) tolerance (±20%) and symmetric PCB routing are mandatory for stable parallel operation above 10 A total current.

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 12.2 Ω for characterization, but practical designs use 10–22 Ω depending on switching frequency and EMI targets. Values above 33 Ω increase turn-on time beyond 25 ns and risk shoot-through in half-bridge configurations; values below 5 Ω may cause gate ringing due to PCB inductance interacting with the device's 16 Ω internal R_G.

Does IPA60R1K0CEXKSA1 require a negative gate turn-off voltage?

No. Its gate threshold voltage (2.5–3.5 V) and 30 V dynamic V_GS rating allow safe operation with 0 V to 10 V or 0 V to 12 V gate drive. Negative turn-off is unnecessary and not recommended-standard bootstrap or isolated gate drivers delivering 0/+10 V are fully adequate for all specified operating conditions.

How does its body diode performance compare to fast recovery diodes in QR flyback?

The integrated body diode has 220 ns t_rr, 1.5 µC Q_rr, and 12 A I_RRM, making it suitable for QR flyback without external diode replacement. However, its V_SD is 0.9 V at 1.9 A-higher than Schottky diodes-so conduction loss dominates at light loads; synchronous rectification remains preferred for >90% efficiency targets above 30 W.

IPA60R1K0CEXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 26W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA60R1K0CEXKSA1 FAQ

1.How can I place an order for IPA60R1K0CEXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R1K0CEXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R1K0CEXKSA1 reliable?

The price and inventory of IPA60R1K0CEXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R1K0CEXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R1K0CEXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R1K0CEXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R1K0CEXKSA1?

IPA60R1K0CEXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R1K0CEXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R1K0CEXKSA1?

For technical support, including IPA60R1K0CEXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R1K0CEXKSA1 requirements.

6.How does Aetrix verify that IPA60R1K0CEXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R1K0CEXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R1K0CEXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R1K0CEXKSA1?

All IPA60R1K0CEXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R1K0CEXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R1K0CEXKSA1 part is unused and in its original packaging.

Return procedure for IPA60R1K0CEXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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