Infineon Technologies IPA60R210CFD7XKSA1

Overview

IPA60R210CFD7XKSA1 from Infineon is a 600 V, 210 mΩ superjunction MOSFET with integrated ultrafast body diode, designed for primary-side switching in resonant LLC and ZVS phase-shift full-bridge topologies. It delivers Qrr = 145 nC (typ), trr = 110 ns (max), Qg = 48 nC (typ), and RDS(on) max = 210 mΩ at VGS = 10 V, enabling high-efficiency operation in 2–3 kW server PSUs and EV charging stations.

For engineers reviewing the IPA60R210CFD7XKSA1 datasheet, IPA60R210CFD7XKSA1 pinout, IPA60R210CFD7XKSA1 application, or IPA60R210CFD7XKSA1 equivalent, key selection criteria include reverse recovery ruggedness (dv/dt & di/dt), FOM (RDS(on) × Qg = 10.08 Ω·nC), hard commutation capability, and TO-220 FullPAK package thermal performance in high-frequency soft-switching designs.

Technical Context

The IPA60R210CFD7XKSA1 implements CoolMOS™ CFD7 silicon technology with optimized charge distribution in the superjunction drift region, reducing Qg by ~15% versus CFD2 and lowering Qrr up to 69% versus competitive 190 mΩ-class devices. Its integrated fast body diode eliminates need for external SiC/Schottky anti-parallel diodes in resonant converters.

It supports gate drive with standard ±20 V logic-level signals, features enhanced dv/dt immunity (>50 V/ns) and di/dt ruggedness during hard commutation events, and maintains stable RDS(on) over temperature (TCR ≈ 0.6%/°C) - critical for parallel operation and thermal stability in high-power SMPS.

Key Specifications

Pinout & Package

IPA60R210CFD7XKSA1 uses the TO-220 FullPAK package: drain-connected metal tab (electrically isolated), three leads (G, D, S), 1.2 K/W junction-to-case thermal resistance, and 2.5 kV isolation rating between drain tab and leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Compared with IPP60R210CFD7 and IPW60R210CFD7, IPA60R210CFD7XKSA1 uniquely balances thermal performance (1.2 K/W), isolation safety (2.5 kV), and compact TO-220 footprint - making it optimal for space-constrained, forced-air-cooled 2–3 kW resonant SMPS where reliability under repeated hard commutation is mandatory.

Availability

IPA60R210CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for IPA60R210CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and energy-efficient power conversion markets.

The CoolMOS™ CFD7 product line targets high-frequency resonant topologies in datacenter, telecom, and electric vehicle infrastructure, delivering best-in-class Qrr, ruggedness, and ease of implementation without compromising efficiency.

FAQ

What is the maximum recommended gate resistor value for IPA60R210CFD7XKSA1 in an LLC half-bridge?

The maximum recommended gate resistor is 10 Ω for standard 2EDN055x drivers. Higher values (>15 Ω) increase switching time and reduce ZVS margin, risking increased diode reverse recovery loss. At 10 Ω, typical turn-on delay is 22 ns and rise time is 38 ns, preserving soft-switching behavior up to 300 kHz.

Does IPA60R210CFD7XKSA1 require negative gate voltage for reliable turn-off in high-dv/dt environments?

No. IPA60R210CFD7XKSA1 has guaranteed dv/dt immunity >50 V/ns at VGS = 0 V, validated per JEDEC JESD22-A118. Negative gate bias is unnecessary for stable operation in phase-shift full-bridge or LLC converters, simplifying gate driver design and reducing component count.

Can IPA60R210CFD7XKSA1 be paralleled with other CFD7 devices without external current-sharing resistors?

Yes - its positive temperature coefficient of RDS(on) (≈0.6%/°C) provides inherent current balancing. Parallel operation of up to four units is validated in Infineon's AN2019-09, provided layout symmetry and matched gate drive paths are maintained to limit dynamic imbalance to <8% at full load.

Is the drain tab of IPA60R210CFD7XKSA1 electrically isolated, and what is its isolation voltage rating?

Yes, the drain tab is fully isolated from all leads. It is rated for 2.5 kV RMS (60 s) isolation per IEC 60747-5-2, verified with 100% production testing. This enables direct mounting to heatsinks without insulating pads in grounded-chassis systems, improving thermal transfer and reducing assembly cost.