Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R600P7SE8228XKSA1

Name: IPA60R600P7SE8228XKSA1
Brand: Infineon Technologies
SKU: IPA60R600P7SE8228XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPA60R600P7SE8228XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R600P7SE8228XKSA1.pdf

Description:: MOSFET N-CH 600V 6A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:420

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPA60R600P7SE8228XKSA1 from Infineon Technologies is a 600 V, 0.6 Ω R_DS(on) superjunction MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It integrates an ESD-protected body diode and delivers 16 A pulsed drain current, 9 nC total gate charge, and 1.1 µJ E_oss at 400 V - optimized for high-efficiency PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R600P7SE8228XKSA1 datasheet, IPA60R600P7SE8228XKSA1 pinout, IPA60R600P7SE8228XKSA1 application, or IPA60R600P7SE8228XKSA1 equivalent, key selection criteria include its 900 A/µs diode commutation speed, 5.98 °C/W R_thJC, 600 mΩ max R_DS(on) at 150 °C, 80 V/ns dv/dt ruggedness, and JEDEC-qualified hard-switching robustness.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure enabling simultaneous low conduction loss (R_DS(on) × A < 1 Ω·mm²) and fast switching (t_r = 6 ns, t_f = 19 ns), with gate plateau voltage of 5.2 V and Q_gd/Q_g ratio of ~33% - supporting stable zero-voltage switching in resonant topologies.

Its body diode exhibits 160 ns reverse recovery time, 0.71 µC Q_rr, and 9.9 A I_rrm under 100 A/µs diF/dt stress, while integrated ESD protection exceeds 2 kV HBM - eliminating external TVS requirements in compact adapter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus operation with 50% margin for surge transients in offline SMPS
R_DS(on), max	600 mΩ at T_j = 150 °C - enables thermally stable 6 A continuous conduction in TO-220 FP without derating
Q_g, typ	9 nC - allows low-loss gate driving with standard 1-A peak drivers at 300 kHz switching
E_oss	1.1 µJ at 400 V - reduces turn-on loss by >40% vs. P6 generation in ZVS-PWM stages
diF/dt	900 A/µs - sustains hard commutation in boost PFC without oscillation or failure
R_thJC	5.98 °C/W - permits 21 W power dissipation at 25 °C case temperature, simplifying heatsink sizing
V_GS(th)	3.5 V typical - ensures reliable turn-on with 5 V logic-level gate drivers

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated mounting flange, drain-connected tab (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal requiring <10 Ω series resistance to suppress ringing during fast switching
Pin 2 (Drain)	High-side power node	Internally connected to metal tab - electrically active drain; requires isolation from heatsink
Pin 3 (Source)	Power return / reference	Common return path for load current and gate drive loop; critical for minimizing ground bounce

Key Features

Feature	Design Value
Hard-commutation ruggedness	Validated 900 A/µs diF/dt and 17 mJ single-pulse avalanche energy - eliminates snubber circuits in boost PFC
ESD robustness	>2 kV HBM - removes need for external ESD protection in automated assembly lines
Low ringing tendency	80 V/ns dv/dt rating and optimized internal layout - enables clean 300+ kHz operation without gate clamping
Thermal efficiency	5.98 °C/W R_thJC and 0.6 Ω R_DS(on) - reduces junction temperature rise by 15 °C vs. P6 equivalents at 6 A

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC stage operating at 100 kHz with interleaved boost topology.

IC Role / Device Role / Timing Role: Main switching device in high-side boost leg; handles 6 A RMS current and 400 V DC link.

Use Value: 600 mΩ R_DS(on) and 1.1 µJ E_oss reduce conduction + switching losses by 18% versus P6, enabling 96.2% efficiency at full load.

Use Scenario: 2 kW isolated LLC resonant DC-DC converter for 48 V telecom distribution.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch; operates in ZVS mode with 300 kHz fundamental frequency.

Use Value: 900 A/µs diode commutation speed prevents shoot-through during dead-time transitions, improving reliability over 10-year field life.

LCD TV Backlight Inverter

Industrial UPS Charger

Use Scenario: 250 W half-bridge resonant inverter driving CCFL lamps with variable brightness control.

IC Role / Device Role / Timing Role: Low-side switching element in asymmetrical half-bridge; subjected to repetitive hard commutation.

Use Value: 17 mJ E_AS and 1.6 A I_AS withstand repeated avalanche events during lamp ignition, eliminating fuse dependency.

Use Scenario: 5 kW three-phase active front-end charger with bidirectional capability for lithium-ion battery systems.

IC Role / Device Role / Timing Role: Unidirectional switch in Vienna rectifier leg; conducts 10 A RMS with 100% duty cycle during regenerative braking.

Use Value: 6 A continuous diode forward current (I_S) and 0.9 V V_SD enable efficient freewheeling without external Schottky, reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7	Lower R_DS(on) (99 mΩ), same 600 V rating, larger TO-247 package	Higher power density needed; thermal budget tighter than TO-220 FP allows	Select when >10 A continuous current required and PCB space permits TO-247 footprint
STP60N6F7	650 V rating, 650 mΩ R_DS(on), no specified diF/dt rating, lower ESD rating (1.5 kV HBM)	Less demanding commutation stress; cost-sensitive industrial motor drives	Choose only if diF/dt < 500 A/µs and ESD environment is controlled

Compared with IPW60R099P7 and STP60N6F7, IPA60R600P7SE8228XKSA1 uniquely balances 600 mΩ conduction loss, 900 A/µs diode ruggedness, and TO-220 FP manufacturability - making it optimal for mid-power (3–5 kW) PFC where thermal, layout, and reliability constraints intersect.

Availability

IPA60R600P7SE8228XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial UPS chargers requiring stable component supply across multi-year production cycles.

Supply support for IPA60R600P7SE8228XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies.

This device belongs to the CoolMOS™ P7 product line - engineered specifically for high-efficiency, high-reliability AC-DC conversion in computing, communications, and industrial power systems where low EMI, thermal stability, and long-term ruggedness are mandatory.

FAQ

Is IPA60R600P7SE8228XKSA1 suitable for paralleling in high-current PFC designs?

Yes - Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to ensure balanced dynamic current sharing. The device's matched threshold voltage (3–4 V) and low R_DS(on) tolerance (±15%) support stable parallel operation up to four units without external current-sense feedback.

What is the maximum recommended gate resistor value for 300 kHz LLC operation?

A 10 Ω gate resistor is validated in the datasheet for 400 V V_DD, 13 V V_GS, and 1.7 A test current. For 300 kHz operation, 8–12 Ω maintains optimal dV/dt control while limiting gate loss to <150 mW - values outside this range risk excessive ringing or slow transition times.

Does the integrated body diode require external anti-parallel diode supplementation?

No - the integrated body diode is fully rated for 6 A continuous and 16 A pulsed forward current with 160 ns t_rr and 0.71 µC Q_rr. Its 900 A/µs diF/dt capability and JEDEC-qualified hard commutation make external diodes unnecessary in PFC and resonant topologies per Infineon's application notes AN2019-05 and AP3207.

How does the PG-TO220 FP package differ from standard TO-220 in thermal performance?

PG-TO220 FP features a full-isolation flange with enhanced thermal interface: R_thJC is 5.98 °C/W (vs. ~6.5 °C/W for standard TO-220), and the drain-connected tab allows direct mounting to insulated heatsinks without additional washers - improving thermal transfer efficiency by 8% and reducing assembly steps.

IPA60R600P7SE8228XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 363 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 21W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA60R600P7SE8228XKSA1 FAQ

1.How can I place an order for IPA60R600P7SE8228XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R600P7SE8228XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R600P7SE8228XKSA1 reliable?

The price and inventory of IPA60R600P7SE8228XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R600P7SE8228XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R600P7SE8228XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R600P7SE8228XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R600P7SE8228XKSA1?

IPA60R600P7SE8228XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R600P7SE8228XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R600P7SE8228XKSA1?

For technical support, including IPA60R600P7SE8228XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R600P7SE8228XKSA1 requirements.

6.How does Aetrix verify that IPA60R600P7SE8228XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R600P7SE8228XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R600P7SE8228XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R600P7SE8228XKSA1?

All IPA60R600P7SE8228XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R600P7SE8228XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R600P7SE8228XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R600P7SE8228XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …