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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R065C7XKSA1

Name: IPA65R065C7XKSA1
Brand: Infineon Technologies
SKU: IPA65R065C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R065C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R065C7XKSA1.pdf

Description:: MOSFET N-CH 650V 15A TO220-FP

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Product details

Overview

IPA65R065C7XKSA1 from Infineon Technologies is a 650 V, 65 mΩ superjunction MOSFET in the CoolMOS™ C7 family, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 145 A pulsed drain current, 64 nC total gate charge, and 8 µJ Eoss at 400 V, enabling high-frequency operation in server, telecom, and solar power supplies.

For engineers reviewing the IPA65R065C7XKSA1 datasheet, IPA65R065C7XKSA1 pinout, IPA65R065C7XKSA1 application, or IPA65R065C7XKSA1 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), body diode commutation speed (60 A/µs), RDS(on) × Qg FOM, thermal resistance (3.68 °C/W), and JEDEC industrial qualification.

Technical Context

This device implements a superjunction (SJ) structure with optimized charge balancing for reduced conduction and switching losses. Its gate plateau voltage of 5.4 V and low Qgd (21 nC) support clean turn-on/turn-off transitions under high dv/dt stress.

The integrated body diode features 800 ns reverse recovery time and 10 µC Qrr at 400 V, enabling robust commutation in continuous conduction mode (CCM) PFC. Thermal design is supported by a 3.68 °C/W junction-to-case resistance and 150 °C maximum operating junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage
R_DS(on) max @ 150°C	65 mΩ - ensures low conduction loss at full-load thermal conditions
Q_g typ	64 nC - enables efficient gate drive with moderate 13 V logic-level control
E_oss @ 400 V	8 µJ - reduces turn-off energy loss in high-frequency hard-switched converters
dv/dt ruggedness	100 V/ns - sustains reliable operation during fast voltage transients without false turn-on
Body diode dI/dt	60 A/µs - supports fast, controlled commutation in totem-pole PFC topologies
T_j max	150 °C - qualified per JEDEC for industrial ambient environments

Pinout & Package

IPA65R065C7XKSA1 uses the PG-TO220 FP (FullPAK) package with isolated mounting screw hole and drain-connected tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10–13 V gate drive; low 0.85 Ω internal gate resistance simplifies driver sizing
Pin 2 (Drain)	High-side switch node	Exposed metal tab serves as primary drain connection and heatsink interface
Pin 3 (Source)	Power return / reference	Provides low-inductance source path; critical for minimizing gate loop ringing

Key Features

Feature	Design Value
Superjunction architecture	Enables 65 mΩ R_DS(on) at 650 V while maintaining <100 ns switching times
Low R_DS(on) × E_oss FOM	Reduces combined conduction + switching loss, improving efficiency in 65–100 kHz PFC stages
100 V/ns dv/dt rating	Eliminates need for external gate clamping in high-noise industrial SMPS layouts
Pb-free plating & halogen-free mold compound	Meets RoHS 2011/65/EU and JEDEC J-STD-020 reflow compatibility requirements

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active front-end boost converter operating at 65–100 kHz with 380–400 V DC output.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost topology.

Use Value: 65 mΩ R_DS(on) and 64 nC Q_g enable >98% efficiency at 3 kW while maintaining thermal margin at 100°C ambient.

Use Scenario: 48 V telecom rectifier with universal AC input and active PFC + LLC secondary stage.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched PFC pre-regulator.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during line surges and lightning transients.

Solar String Inverter DC-DC Stage

Industrial UPS Input Stage

Use Scenario: Isolated DC-DC converter boosting PV string voltage (600–1000 V) to intermediate bus.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology.

Use Value: 8 µJ E_oss at 400 V reduces turn-off loss during ZVS transition, improving light-load efficiency.

Use Scenario: Online double-conversion UPS with bidirectional PFC and IGBT-based inverter.

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved boost PFC bank.

Use Value: 60 A/µs body diode dI/dt rating supports fast zero-current switching in high-dI/dt grid-synchronization events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	600 V, 55 mΩ, 72 nC Q_g, higher E_oss (12 µJ @ 400 V)	Optimized for lower R_DS(on) but less dv/dt rugged (60 V/ns)	Prefer when conduction loss dominates and layout has low noise coupling
IXTH60N65X2	650 V, 60 mΩ, 92 nC Q_g, slower trr (1200 ns), no JEDEC industrial qualification	Higher gate drive power required; limited thermal margin above 125°C	Consider only for cost-sensitive non-industrial designs with relaxed reliability targets

Compared with STW65N60DM6 and IXTH60N65X2, IPA65R065C7XKSA1 offers superior dv/dt immunity and lower switching energy-critical for compact, high-power-density PFC where layout parasitics cannot be fully suppressed.

Availability

IPA65R065C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply and long-term industrial qualification.

Supply support for IPA65R065C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ C7 series targets high-efficiency, high-reliability AC-DC conversion in computing, telecom, and renewable energy systems-designed specifically to replace older SJ MOSFET generations with improved FOM and ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 5.3 Ω gate resistor is used in the datasheet's switching time test conditions (V_GS=13 V, V_DD=400 V). For robust operation across temperature and layout variations, Infineon recommends 4.7–6.8 Ω to balance switching speed against gate oscillation and overshoot, especially in high-di/dt PFC applications.

Can IPA65R065C7XKSA1 be paralleled with identical units?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each MOSFET's gate line or individual totem-pole drivers. This mitigates dynamic current imbalance caused by parameter spread and layout asymmetry-critical for multi-phase PFC designs where mismatched turn-on timing risks thermal runaway.

Is the body diode suitable for synchronous rectification?

No-the body diode is not optimized for synchronous rectification. Its 800 ns t_rr and 10 µC Q_rr cause significant reverse recovery loss in high-frequency SR applications. Use dedicated low-Q_rr SiC Schottky diodes or discrete SR controllers instead.

Does IPA65R065C7XKSA1 require a negative gate turn-off voltage?

No-its gate oxide is rated for ±20 V static and ±30 V dynamic voltage. A 0 V to +12 V or +13 V gate drive suffices. Negative turn-off bias is unnecessary and adds complexity; the 100 V/ns dv/dt rating ensures immunity to Miller-induced false turn-on without it.

IPA65R065C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 17.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 850µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3020 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA65R065C7XKSA1 FAQ

1.How can I place an order for IPA65R065C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R065C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R065C7XKSA1 reliable?

The price and inventory of IPA65R065C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R065C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R065C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R065C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R065C7XKSA1?

IPA65R065C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R065C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R065C7XKSA1?

For technical support, including IPA65R065C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R065C7XKSA1 requirements.

6.How does Aetrix verify that IPA65R065C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R065C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R065C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R065C7XKSA1?

All IPA65R065C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R065C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R065C7XKSA1 part is unused and in its original packaging.

Return procedure for IPA65R065C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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