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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R225C7XKSA1

Name: IPA65R225C7XKSA1
Brand: Infineon Technologies
SKU: IPA65R225C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R225C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R225C7XKSA1.pdf

Description:: MOSFET N-CH 650V 7A TO220-FP

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Product details

Overview

IPA65R225C7XKSA1 from Infineon Technologies is a 650 V, 225 mΩ superjunction MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It features 20 nC total gate charge, 2.3 µJ Eoss at 400 V, and 55 A/µs body diode di/dt rating. Designed for hard-switching PFC and PWM stages in telecom rectifiers and solar inverters.

For engineers reviewing the IPA65R225C7XKSA1 datasheet, IPA65R225C7XKSA1 pinout, IPA65R225C7XKSA1 application, or IPA65R225C7XKSA1 equivalent, key selection criteria include RDS(on) × Eoss figure-of-merit, dv/dt ruggedness (100 V/ns), body diode commutation speed, and thermal resistance (RthJC = 4.38 °C/W).

Technical Context

This CoolMOS™ C7 device implements a charge-compensated superjunction structure enabling high-voltage blocking with low conduction loss. Its optimized cell layout delivers best-in-class RDS(on) × Qg (225 mΩ × 20 nC) and RDS(on) × Eoss (225 mΩ × 2.3 µJ), directly supporting >100 kHz switching in continuous conduction mode PFC.

The integrated body diode supports fast, soft reverse recovery (trr = 890 ns, Qrr = 6 µC) with controlled di/dt capability (55 A/µs), reducing snubber stress in bridge-leg configurations. Gate plateau voltage of 5.4 V ensures robust drive margin under varying temperature and load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated for 400 V DC bus applications with 1.6× safety margin in telecom and solar inverters
R_DS(on) max	225 mΩ @ T_j = 150°C - enables 7 A continuous current with <1.6 W conduction loss at 4.8 A
Q_g typ	20 nC - reduces gate driver power requirement and simplifies 13 V gate drive implementation
E_oss @ 400 V	2.3 µJ - lowers turn-off energy loss, critical for >100 kHz hard-switched PFC efficiency
Body diode di/dt	55 A/µs - supports ZVS/ZCS transitions in totem-pole PFC without external snubbers
R_thJC	4.38 °C/W - allows 29 W power dissipation at T_C = 25°C, suitable for forced-air-cooled server PSUs
dv/dt ruggedness	100 V/ns - withstands rapid voltage transients in high-frequency bridge circuits without false turn-on

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting, drain-connected tab (pin 2). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10–13 V logic-level drive; 1.2 Ω internal gate resistance limits ringing during fast edge transitions
Pin 2 (Drain)	High-side switch node	Connected to drain metallization and heatsink tab; electrically isolated but thermally coupled for efficient heat transfer
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate drive; must be routed with low-inductance loop to minimize switching overshoot

Key Features

Feature	Design Value
Superjunction architecture	Enables 650 V rating with 225 mΩ RDS(on) in TO-220 FP, reducing conduction loss by 22% vs. prior C6 generation
Optimized gate charge profile	Qgd/Qg ratio of 30% (6 nC / 20 nC) improves Miller immunity and enables stable operation at 13 V gate drive
Soft-recovery body diode	trr = 890 ns with 16 A peak reverse recovery current ensures low EMI in discontinuous conduction mode PFC
JEDEC industrial qualification	Qualified per JESD47 and JESD22-A108 for 150°C continuous operation in server and UPS power supplies

Applications

Telecom Rectifier

Solar Inverter DC-DC Stage

Use Scenario: Front-end AC-DC conversion in 3 kW telecom rectifier operating at 100 kHz CCM PFC.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage; handles 400 V DC link with 7 A RMS input current.

Use Value: 2.3 µJ Eoss and 20 nC Qg reduce switching losses by 18% vs. C6 series, enabling >96.5% efficiency at full load.

Use Scenario: Isolated DC-DC converter in string-level solar inverter, stepping 1000 V PV input to 400 V bus.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology; switches at 150 kHz with ZVS assistance.

Use Value: 55 A/µs body diode di/dt and 100 V/ns dv/dt ruggedness allow reliable ZVS across 20–100% load range without added gate damping.

Server PSU PFC

Industrial UPS Inverter

Use Scenario: Active PFC module in 2 kW redundant server power supply with dual-phase interleaved boost.

IC Role / Device Role / Timing Role: Low-inductance, high-current switch handling 4.8 A average current per phase at 125°C junction temperature.

Use Value: RDS(on) drift <98% at 125°C and 4.38 °C/W RthJC enable stable thermal performance without derating in 1U chassis airflow.

Use Scenario: Output H-bridge in 5 kVA double-conversion UPS inverter stage operating at 50/60 Hz fundamental with 10 kHz PWM carrier.

IC Role / Device Role / Timing Role: Hard-switched leg switch managing 41 A pulsed current during overload and short-circuit events.

Use Value: 48 mJ single-pulse avalanche energy and 150°C Tj rating ensure fault-withstand capability during grid-sag recovery sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	RDS(on) = 210 mΩ, Qg = 26 nC, Eoss = 3.1 µJ, TO-247 package	Higher gate drive power required; larger footprint; no integrated diode softness data	Prefer when higher avalanche robustness (EAS = 620 mJ) is prioritized over switching efficiency
IXTH50N65X2	RDS(on) = 240 mΩ, Qg = 17 nC, Eoss = 1.9 µJ, TO-247 package	Lower Eoss but higher RDS(on); requires tighter gate drive timing control due to lower VGS(th) (2.5 V)	Prefer when minimizing turn-off loss dominates system design, and thermal margin permits higher conduction loss

Compared with STW65N60DM6 and IXTH50N65X2, IPA65R225C7XKSA1 offers the lowest RDS(on) × Eoss product (518 mΩ·µJ), making it optimal for high-frequency, high-efficiency PFC where both conduction and switching losses must be minimized within constrained thermal envelopes.

Availability

IPA65R225C7XKSA1 is available at Aetrix Electronics and suitable for telecom rectifiers, solar inverter DC-DC stages, and server PSU PFC requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.

Supply support for IPA65R225C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC and DC-DC conversion systems, specifically engineered to replace older superjunction generations in 650 V PFC and resonant topologies while maintaining pin compatibility and drive simplicity.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current ID is 5 A at TC = 100°C, as specified in Table 2 of the datasheet. This rating is limited by junction temperature (Tj,max = 150°C) and thermal resistance (RthJC = 4.38 °C/W), not package current-carrying capacity alone.

Does IPA65R225C7XKSA1 support paralleling, and what gate drive precautions are needed?

Yes, it supports paralleling per Infineon's application note AN2015-04. Ferrite beads (10–22 Ω impedance at 100 MHz) on individual gate lines are recommended to suppress oscillation; separate totem-pole drivers per device are advised for >2-unit arrays to ensure balanced dynamic current sharing.

How does the body diode performance compare to standard silicon diodes in PFC applications?

Its body diode exhibits trr = 890 ns, Qrr = 6 µC, and soft recovery (Irrm = 16 A), significantly outperforming standard FRDs in reverse recovery noise and EMI. Unlike discrete diodes, it shares thermal path with the MOSFET die, enabling coordinated thermal management in compact PFC designs.

Is the PG-TO220 FP package electrically isolated, and what is its insulation rating?

Yes, the PG-TO220 FP package provides electrical isolation between drain (tab) and source/gate terminals. Its insulation withstand voltage is 2500 V_rms for 1 minute at 25°C, verified per IEC 60747-17, enabling use in reinforced insulation schemes without additional isolation barriers.

IPA65R225C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 225mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 996 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 29W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA65R225C7XKSA1 FAQ

1.How can I place an order for IPA65R225C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R225C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R225C7XKSA1 reliable?

The price and inventory of IPA65R225C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R225C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R225C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R225C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R225C7XKSA1?

IPA65R225C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R225C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R225C7XKSA1?

For technical support, including IPA65R225C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R225C7XKSA1 requirements.

6.How does Aetrix verify that IPA65R225C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R225C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R225C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R225C7XKSA1?

All IPA65R225C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R225C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R225C7XKSA1 part is unused and in its original packaging.

Return procedure for IPA65R225C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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