Infineon Technologies IPA65R400CEXKSA1

Overview

IPA65R400CEXKSA1 from Infineon Technologies is a 650 V, 400 mΩ superjunction MOSFET in PG-TO220FP package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 15.1 A continuous drain current at 25°C, 39 nC total gate charge, and 2.8 µJ output switching energy at 400 V - enabling compact, cooler-running AC/DC power supplies for LCD TVs and lighting.

For engineers reviewing the IPA65R400CEXKSA1 datasheet, IPA65R400CEXKSA1 pinout, IPA65R400CEXKSA1 application, or IPA65R400CEXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, E_oss-driven soft-switching capability, commutation ruggedness up to 500 A/µs, and TO-220FP thermal resistance of 4 °C/W.

Technical Context

This CoolMOS™ CE device implements a charge-compensated superjunction structure with trench-gate design, delivering low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss versus prior generations. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.5 V) support robust 13 V gate drive compatibility without requiring negative turn-off bias.

The integrated body diode features 280 ns reverse recovery time and 2.8 µC Q_rr at 400 V, enabling reliable operation in discontinuous conduction mode (DCM) PFC. Its 50 V/ns dv/dt ruggedness and 1.8 A repetitive avalanche rating ensure stable performance under transient overvoltage conditions in offline converters.

Key Specifications

Pinout & Package

Package: PG-TO220FP (FullPAK), thermally enhanced variant with isolated tab; drain connected to pin 2 and metal tab, gate to pin 1, source to pin 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP65N6F6 and IPP65R400CFD7, IPA65R400CEXKSA1 offers the lowest E_oss and best dv/dt ruggedness among the three, making it optimal for high-density PFC where switching loss and reliability under transient stress are prioritized.

Availability

IPA65R400CEXKSA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV main power stages, and indoor LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IPA65R400CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ CE series was engineered specifically for high-efficiency, high-power-density AC/DC conversion in consumer and industrial power supplies - emphasizing low-loss switching, ease of drive, and ruggedness in real-world board-level environments.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 4.9 Ω gate resistor for characterization, but practical designs use 10–22 Ω to balance switching speed against overshoot and EMI. With 17 Ω intrinsic gate resistance, external R_G ≥10 Ω ensures stable turn-on while limiting peak gate current to <1.3 A under 13 V drive - preventing gate oxide stress and oscillation in TO-220FP layouts.

Can IPA65R400CEXKSA1 be paralleled for higher current capacity?

Yes, but only with strict layout symmetry and individual gate ferrite beads (e.g., 100 Ω @ 100 MHz) per device to suppress oscillation. The datasheet explicitly recommends this approach due to inherent parameter spread in superjunction MOSFETs; mismatched R_DS(on) and Q_g can cause current imbalance exceeding 25% without proper gate isolation.

Does this MOSFET require negative gate voltage for safe turn-off?

No. The device's 3.5 V maximum V_GS(th) and 5.5 V gate plateau voltage allow clean turn-off with 0 V gate drive. Negative bias is unnecessary and not recommended - the 30 V dynamic V_GS rating permits brief undershoots, but sustained negative voltage adds no reliability benefit and risks gate oxide degradation.

What is the insulation withstand voltage rating for the TO-220FP package?

The TO-220FP package provides 2500 V_RMS insulation withstand voltage between drain (tab/pin 2) and source (pin 3) for 1 minute at 25°C, verified per IEC 60747-1. This rating supports reinforced insulation in Class II AC/DC power supplies and eliminates need for additional creepage/clearance barriers in PCB layout.