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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA80R1K4CEXKSA2

Name: IPA80R1K4CEXKSA2
Brand: Infineon Technologies
SKU: IPA80R1K4CEXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA80R1K4CEXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA80R1K4CEXKSA2.pdf

Description:: MOSFET N-CH 800V 3.9A TO220

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Product details

Overview

IPA80R1K4CEXKSA2 from Infineon Technologies is an 800 V, 1.4 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in TO-220 FullPAK package, optimized for QR flyback LED lighting retrofit systems. It delivers 3.9 A continuous drain current at T_C = 25°C, features 23 nC total gate charge and 1.8 µJ output switching energy at 400 V, enabling high-efficiency, compact offline AC/DC converters.

For engineers reviewing the IPA80R1K4CEXKSA2 datasheet, IPA80R1K4CEXKSA2 pinout, IPA80R1K4CEXKSA2 application, or IPA80R1K4CEXKSA2 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 400 A/µs body diode commutation speed, 170 mJ single-pulse avalanche energy, and TO-220 FP drain-tab configuration for thermal and layout optimization in high-density lighting designs.

Technical Context

This 800 V CoolMOS™ CE device uses charge-compensation superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust dv/dt immunity (50 V/ns) and high peak current capability (12 A pulsed). Its 1.4 Ω max R_DS(on) at 150°C enables stable operation in thermally constrained LED drivers.

The integrated body diode supports quasi-resonant flyback operation with 520 ns reverse recovery time and 4 µC Q_rr, and its 4 °C/W junction-to-case thermal resistance facilitates direct heatsink mounting via the drain-connected tab in TO-220 FP.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Enables direct connection to universal AC mains (up to 375 V_RMS) with margin for surge and ringing.
R_DS(on),max	1.4 Ω @ T_j = 150°C - Determines conduction loss in QR flyback primary switch; sets minimum practical output power for thermally limited designs.
Q_g,typ	23 nC - Defines gate drive power requirement and switching transition time; impacts EMI filter sizing and driver IC selection.
E_oss@400V	1.8 µJ - Quantifies turn-off energy loss during voltage rise; directly affects efficiency and thermal design in high-frequency QR operation.
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast voltage transients without false turn-on, critical in high-EMI lighting environments.
I_D,pulse	12 A - Supports short-duration overload conditions and startup surges in LED driver IC-controlled systems.
R_thJC	4 °C/W - Enables predictable thermal interface design when mounted to heatsink via drain tab; defines maximum allowable power dissipation at given case temperature.

Pinout & Package

IPA80R1K4CEXKSA2 is housed in a TO-220 FullPAK (PG-TO220-3-1) package with isolated plastic body and electrically connected drain tab. The drain is internally bonded to the metal tab for enhanced thermal conduction and simplified mechanical mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives PWM signal from controller IC; requires low-inductance gate loop due to 23 nC Q_g and fast switching.
Pin 2 / Tab (Drain)	High-voltage power input	Connected to AC rectified bus; serves as primary thermal path to heatsink; must be electrically isolated from PCB ground plane.
Pin 3 (Source)	Power return and reference	Connects to primary-side ground and current-sense resistor; forms common reference for gate drive and controller feedback.

Key Features

Feature	Design Value
Extreme dv/dt rating	50 V/ns - Eliminates need for external gate clamping in noisy QR flyback topologies with high leakage inductance.
Low effective output capacitance	Co(er) = 19 pF - Reduces turn-off loss and improves zero-voltage switching (ZVS) margin in QR operation above 65 kHz.
High peak current capability	12 A pulsed - Accommodates inrush and fault currents without bond-wire failure, supporting robust LED lamp hot-plug behavior.
RoHS-compliant, halogen-free	Meets IEC 61249-2-21 and JEDEC J-STD-020 - Ensures compliance for global LED retrofit product certifications (e.g., ENERGY STAR, CE).

Applications

LED Retrofit Lamps

Smart Home Lighting Drivers

Use Scenario: Replacement of incandescent bulbs with integrated AC/DC QR flyback LED drivers in E27/E26 screw-base lamps.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in discontinuous conduction mode (DCM) with valley-switching control.

Use Value: 1.4 Ω R_DS(on) and 23 nC Q_g enable >85% efficiency at 12 W output while meeting thermal limits in enclosed lamp housings.

Use Scenario: Dimmable LED drivers in Wi-Fi/Zigbee-enabled smart bulbs requiring consistent lumen output across universal AC input (90–305 V_AC).

IC Role / Device Role / Timing Role: Main power switch synchronized to digital controller's adaptive frequency modulation for flicker-free dimming.

Use Value: 800 V rating and 50 V/ns dv/dt immunity ensure stable operation during phase-cut dimmer transitions and line surges.

Commercial Downlight Drivers

Outdoor LED Streetlight Sub-Modules

Use Scenario: Constant-current drivers for 20–40 W downlights in office and retail spaces, operating in enclosed thermal environments.

IC Role / Device Role / Timing Role: High-efficiency QR flyback switch with integrated overtemperature protection via controller sensing of R_DS(on) drift.

Use Value: 4 °C/W R_thJC and 150°C T_j,max allow full-load operation at 85°C ambient without derating in sealed fixtures.

Use Scenario: Modular 60–100 W LED driver sections used in IP66-rated streetlight heads exposed to wide ambient temperature swings (−40°C to +85°C).

IC Role / Device Role / Timing Role: Primary switch rated for outdoor surge immunity (IEC 61000-4-5 Level 4) and long-term reliability under thermal cycling.

Use Value: 170 mJ E_AS and −40°C to +150°C T_j range support 10-year field life in unventilated outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD80R1K4CE	Same die, DPAK package (no isolated tab); R_thJA = 60 °C/W vs. 4 °C/W R_thJC.	Suitable only for low-power (<5 W), PCB-mounted applications without heatsink.	Select when board space is constrained and thermal load is minimal; avoid for >10 W or enclosed fixtures.
STP80NF55-08	800 V planar MOSFET; R_DS(on) = 0.08 Ω but Q_g = 120 nC; no dv/dt rating specified.	Higher conduction loss at high T_j; unsuitable for QR flyback due to slow switching and lack of dv/dt hardening.	Only consider for linear-regulated or low-frequency hard-switched topologies where efficiency and EMI are secondary.

Compared with IPD80R1K4CE and STP80NF55-08, IPA80R1K4CEXKSA2 uniquely balances 800 V rating, low Q_g/R_DS(on) trade-off, and proven dv/dt ruggedness-making it the only viable choice for thermally demanding, high-frequency QR flyback LED drivers requiring long-life reliability.

Availability

IPA80R1K4CEXKSA2 is available at Aetrix Electronics and suitable for LED retrofit lamps, smart home lighting drivers, commercial downlight modules, and outdoor streetlight sub-modules requiring stable component supply and long-lifecycle support.

Supply support for IPA80R1K4CEXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the CoolMOS™ CE family, engineered specifically for cost-sensitive, high-efficiency AC/DC conversion in consumer lighting-prioritizing low gate charge, rugged dv/dt performance, and thermal robustness in compact form factors.

FAQ

What is the maximum recommended gate resistor value for IPA80R1K4CEXKSA2 in QR flyback operation?

A 22 Ω gate resistor is validated in the datasheet for V_DD = 400 V, I_D = 3.9 A operation, yielding 25 ns turn-on delay and 12 ns fall time. Values above 33 Ω increase switching losses and risk incomplete turn-off during high-frequency QR valleys; values below 10 Ω require careful layout to avoid gate oscillation due to 1.2 Ω intrinsic gate resistance.

Can IPA80R1K4CEXKSA2 be paralleled with identical units in high-power LED drivers?

Yes, but only with ferrite beads on each gate line (or separate totem-pole drivers) to suppress dynamic current imbalance. The datasheet explicitly recommends this due to parameter spread in threshold voltage (2.1–3.9 V) and transconductance, which can cause unequal sharing during fast transitions in parallel configurations above 10 W.

Does IPA80R1K4CEXKSA2 support 230 V_AC input with full surge immunity per IEC 61000-4-5?

Yes-it withstands 2500 V_RMS insulation voltage (1 min) and has 170 mJ single-pulse avalanche energy, enabling robust operation under 2 kV/1.2×50 µs surge events typical in 230 V_AC mains. Its 800 V V_DS rating provides 2.1× margin over peak rectified voltage (≈325 V), accommodating line swells and ringing.

Is the drain tab electrically isolated in the TO-220 FullPAK package?

No-the drain is internally connected to the metal tab, making it live at high voltage. The package uses molded plastic isolation between tab and leads, but the tab itself must be mounted to an insulated heatsink or isolated thermal pad. This configuration enables low R_thJC (4 °C/W) while requiring careful creepage/clearance design per IEC 61347-1.

IPA80R1K4CEXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 3.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA80R1K4CEXKSA2 FAQ

1.How can I place an order for IPA80R1K4CEXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA80R1K4CEXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA80R1K4CEXKSA2 reliable?

The price and inventory of IPA80R1K4CEXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA80R1K4CEXKSA2 is usually 5 days.

3.What payment methods are accepted for IPA80R1K4CEXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA80R1K4CEXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA80R1K4CEXKSA2?

IPA80R1K4CEXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA80R1K4CEXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA80R1K4CEXKSA2?

For technical support, including IPA80R1K4CEXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA80R1K4CEXKSA2 requirements.

6.How does Aetrix verify that IPA80R1K4CEXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPA80R1K4CEXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA80R1K4CEXKSA2 meets industry standards.

7.What is the process for return or replacement of IPA80R1K4CEXKSA2?

All IPA80R1K4CEXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPA80R1K4CEXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA80R1K4CEXKSA2 part is unused and in its original packaging.

Return procedure for IPA80R1K4CEXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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