Infineon Technologies IPA90R500C3XKSA2

Overview

IPA90R500C3XKSA2 from Infineon Technologies is a 900 V, 0.5 Ω (max @ 25 °C) CoolMOS™ C3 superjunction power MOSFET in PG-TO220 FP package, optimized for quasi-resonant flyback and forward SMPS topologies in PC silverbox and industrial power supplies. It delivers 6.8 A continuous drain current at T_C = 100 °C, 68 nC total gate charge, and extreme dv/dt ruggedness up to 50 V/ns.

For engineers reviewing the IPA90R500C3XKSA2 datasheet, IPA90R500C3XKSA2 pinout, IPA90R500C3XKSA2 application, or IPA90R500C3XKSA2 equivalent, key selection criteria include R_DS(on) vs. temperature stability, single-pulse avalanche energy (388 mJ), diode reverse recovery performance (Q_rr = 8.5 µC), and thermal resistance (R_thJC = 3.7 K/W).

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology with optimized charge balance for low R_DS(on) × Q_g figure-of-merit (0.5 Ω × 68 nC). Its 900 V V_(BR)DSS rating supports high-input-voltage offline converters, while the 50 V/ns dv/dt ruggedness enables reliable operation in fast-switching resonant circuits without snubbers.

The integrated body diode features 480 ns reverse recovery time and 31 A peak reverse recovery current under standardized conditions (V_R = 400 V, dI_F/dt = 100 A/µs), making it suitable for hard-commutated PFC and flyback synchronous rectification where diode softness impacts EMI and efficiency.

Key Specifications

Pinout & Package

IPA90R500C3XKSA2 is housed in PG-TO220 FP (full-pack) package with isolated tab, featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be insulated from heatsink unless system topology requires drain-referenced mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP9NK90ZFP and IPP90R500C3, IPA90R500C3XKSA2 offers superior R_DS(on) × Q_g trade-off and guaranteed dv/dt ruggedness-critical for QR flyback stability-while its isolated tab simplifies thermal design in grounded-heatsink configurations.

Availability

IPA90R500C3XKSA2 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer LED drivers, and server auxiliary rails requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA90R500C3XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-power-density offline SMPS targeting 65–300 kHz switching frequencies and demanding thermal environments.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA90R500C3XKSA2 supports 6.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value is thermally limited-not by package current-carrying capacity-but by junction temperature constraints under steady-state conduction loss conditions.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes, a series gate resistor is required to control switching speed and suppress oscillation. For typical QR flyback operation at 100 kHz, a 22–33 Ω resistor is recommended. Lower values increase dv/dt stress; higher values raise switching losses and delay response to control signals.

Can IPA90R500C3XKSA2 replace older 600 V CoolMOS™ devices in existing designs?

Direct replacement is possible only with layout review: its 900 V rating allows higher bus voltages, but higher Q_g (68 nC vs. ~40 nC for C2) may require gate driver strength verification. Also confirm dv/dt loop area reduction due to increased ruggedness tolerance.

Is the body diode suitable for synchronous rectification in flyback converters?

No-the body diode is not optimized for synchronous rectification. Its 480 ns t_rr and 8.5 µC Q_rr cause significant commutation loss and EMI. Use an external Schottky or dedicated SR controller with low-Q_rr FETs for that function.