Infineon Technologies IPA95R130PFD7XKSA1

Overview

IPA95R130PFD7XKSA1 from Infineon Technologies is a 950 V, 130 mΩ superjunction N-channel MOSFET with integrated ultra-fast body diode, designed for high-efficiency resonant topologies including LLC and ZVS in industrial SMPS and lighting power supplies. It delivers 13.9 A continuous drain current at 25 °C, 9.5 µJ Eoss at 500 V, and 1300 A/µs diF/dt capability.

For engineers reviewing the IPA95R130PFD7XKSA1 datasheet, IPA95R130PFD7XKSA1 pinout, IPA95R130PFD7XKSA1 application, or IPA95R130PFD7XKSA1 equivalent, key selection criteria include reverse recovery charge (Qrr = 1.10 µC), gate charge (Qg = 141 nC), RDS(on) temperature stability, hard commutation robustness, and 2500 Vrms isolation rating for safety-critical designs.

Technical Context

This CoolMOS™ PFD7 device employs silicon superjunction technology optimized for soft-switching operation, featuring a fully rated 950 V breakdown voltage and an integrated body diode with 153 ns trr and 1.10 µC Qrr - the lowest in its voltage class. Its 3 V gate threshold (±0.5 V variation) enables reliable turn-on with standard 5 V or 3.3 V controllers.

The MOSFET supports high dv/dt ruggedness (120 V/ns) and reverse diode dv/dt up to 70 V/ns, making it suitable for asymmetric half-bridge and high-frequency resonant converters where fast, predictable body diode commutation is critical. Thermal resistance RthJC is 3.80 °C/W, enabling high-power density thermal management in TO-220 FP packages.

Key Specifications

Pinout & Package

IPA95R130PFD7XKSA1 uses the PG-TO220 FP (FullPAK) package with isolated drain tab, optimized for high-voltage insulation and thermal performance. The package features a drain-connected metal tab for heatsink mounting and creepage/clearance compliant with reinforced insulation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW95R120CFD7 and STW95N95F7, IPA95R130PFD7XKSA1 offers the lowest Qrr and certified 2500 V_rms isolation - critical for industrial SMPS meeting IEC 62368-1 - while maintaining best-in-class R_DS(on) × E_oss FOM for high-frequency LLC operation.

Availability

IPA95R130PFD7XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, lighting power supplies, and high-voltage auxiliary converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA95R130PFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ PFD7 product line targets high-efficiency, high-reliability switched-mode power supplies in lighting and industrial applications, emphasizing ultra-low Qrr, tight V_GS(th) distribution, and reinforced insulation for safety-critical designs.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA95R130PFD7XKSA1 supports 8.7 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limits under sustained conduction, not electrical capability - actual current depends on heatsink design, ambient conditions, and duty cycle.

Does this MOSFET require a negative gate turn-off voltage?

No. The device has a gate threshold voltage of 3 V ±0.5 V and is fully compatible with 0 V to 15 V gate drive. A negative turn-off voltage is not required or recommended; standard 0 V gate return ensures safe, reliable turn-off while avoiding unnecessary gate driver complexity.

Can IPA95R130PFD7XKSA1 replace older CoolMOS™ P6 or P7 devices in existing designs?

Yes - with validation. It offers improved Qrr, tighter V_GS(th), and enhanced ESD robustness versus P6/P7. However, gate charge (141 nC) and capacitance values differ; layout and driver strength must be verified. No mechanical or pinout change is needed - same PG-TO220 FP package and pin assignment apply.

Is the drain tab electrically isolated from the source and gate terminals?

Yes. The PG-TO220 FP package features a fully isolated drain tab rated for 2500 V_rms insulation per minute, confirmed in Table 2 (Insulation withstand voltage). This enables direct heatsink mounting without insulating pads in high-voltage applications, provided creepage and clearance meet system-level safety standards.