Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPA95R310PFD7XKSA1

Part No.:
IPA95R310PFD7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA95R310PFD7XKSA1.pdf
Description:
MOSFET N-CH 950V 8.7A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:475

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPA95R310PFD7XKSA1 from Infineon Technologies is a 950 V, 310 mΩ superjunction MOSFET with integrated ultra-fast body diode, optimized for resonant LLC and ZVS topologies in industrial SMPS and high-voltage lighting power supplies. It delivers 8.7 A continuous drain current, 61 nC total gate charge, and industry-leading 0.78 µC reverse recovery charge (Qrr) at 400 V.

For engineers reviewing the IPA95R310PFD7XKSA1 datasheet, IPA95R310PFD7XKSA1 pinout, IPA95R310PFD7XKSA1 application, or IPA95R310PFD7XKSA1 equivalent, key selection criteria include hard commutation robustness (1300 A/µs diF/dt), low Eoss (4.2 µJ @ 500 V), tight VGS(th) tolerance (±0.5 V), and PG-TO220 FP package compatibility with through-hole thermal management.

Technical Context

This CoolMOS™ PFD7 device employs silicon superjunction architecture with charge compensation trenches to achieve high voltage blocking (950 V) while minimizing RDS(on) × Qg and RDS(on) × Eoss figures of merit. Its integrated fast body diode enables reliable zero-voltage switching without external SiC diodes.

The MOSFET features a 3 V nominal gate threshold voltage with ±0.5 V variation, enabling stable turn-on under wide supply conditions, and supports gate drive with standard 13 V logic-level controllers. Thermal resistance junction-to-case is 4.0 °C/W, confirming suitability for conduction-limited industrial power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 950 V - Enables direct operation from 800 V DC bus without series stacking in industrial PFC+LLC systems.
RDS(on), max 310 mΩ @ Tj = 25°C - Delivers low conduction loss at full load in 1–3 kW SMPS designs.
Qg, typ 61 nC - Reduces gate driver power demand and switching loss in high-frequency (>100 kHz) resonant converters.
Eoss @ 500 V 4.2 µJ - Low output energy capacitance minimizes turn-on loss during ZVS transitions.
Qrr 0.78 µC @ VR = 400 V - Lowest published Qrr in 950 V SJ MOSFET class, critical for soft-switching reliability.
diF/dt 1300 A/µs - Supports high-speed synchronous rectification and hard commutation without oscillation or failure.
VGS(th) 3 V ±0.5 V - Ensures consistent turn-on across temperature and process variation, simplifying gate bias design.

Pinout & Package

IPA95R310PFD7XKSA1 uses the PG-TO220 FP (FullPAK) package with isolated drain tab, designed for high-voltage isolation and mechanical mounting via M2.5 screws (50 Ncm torque). The drain is internally connected to the metal tab for optimal thermal path.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate High-impedance control input requiring <5.3 Ω series gate resistor for safe switching; referenced to source.
Pin 2 Drain Main high-voltage power terminal; electrically connected to isolated metal tab for heatsink mounting and thermal conduction.
Pin 3 Source Power return node and gate reference; forms common node with internal body diode cathode.

Key Features

Feature Design Value
Integrated ultra-fast body diode Qrr = 0.78 µC enables reliable LLC resonance without external diode snubbing or timing margining.
Low Eoss & Ciss Eoss = 4.2 µJ and Ciss = 1765 pF reduce turn-on loss and improve ZVS range in high-frequency topologies.
Tight VGS(th) distribution ±0.5 V variation eliminates need for adaptive gate bias or overdesign in multi-phase or paralleled configurations.
ESD protection HBM Class 2 (≥2 kV) reduces production yield loss and field failure risk during PCB handling and assembly.
JEDEC industrial qualification Fully qualified per JEDEC JESD47 for 150 °C Tj operation, supporting long-term reliability in unventilated enclosures.

Applications

Industrial PFC Stage LLC Resonant Converter

Use Scenario: Active boost PFC front-end operating from 380–800 V DC bus in factory automation power supplies.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost stage, handling 3–5 kW average power.

Use Value: 950 V rating avoids series stacking; low Qrr prevents diode-induced shoot-through during zero-crossing commutation.

Use Scenario: Primary-side power switch in 1–2 kW server PSU LLC half-bridge with 500–700 kHz switching frequency.

IC Role / Device Role / Timing Role: Resonant switch synchronized to zero-voltage turn-on; body diode conducts freewheeling current during dead time.

Use Value: 1300 A/µs diF/dt ensures clean commutation; 4.2 µJ Eoss extends ZVS range across line/load variations.

ZVS Flyback for Lighting High-Voltage DC-DC Isolator

Use Scenario: 100–300 W smart LED driver with universal AC input and regulated 48–56 V output.

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback with valley-switching control and 65–130 kHz variable frequency.

Use Value: Integrated fast body diode eliminates need for external HV diode; 310 mΩ RDS(on) maintains >92% efficiency at full load.

Use Scenario: Isolated 400 V to 24 V DC-DC converter in EV charging station auxiliary power unit (APU).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with 100–200 kHz fixed frequency and adaptive dead-time control.

Use Value: 2500 Vrms insulation withstand voltage meets reinforced isolation requirements; 4.0 °C/W RthJC enables compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPW95R310CFD7 Same 950 V/310 mΩ rating but in TO-247 package; higher RthJC (3.5 °C/W) and no integrated fast diode (Qrr = 1.4 µC). Lacks integrated diode optimization for LLC; requires external diode snubbing in resonant topologies. Preferred where higher peak current (12 A) and TO-247 mechanical robustness outweigh diode performance needs.
STW95N95F6 950 V/320 mΩ, Qrr = 1.1 µC, Ciss = 2100 pF, VGS(th) = 3.5 V ±1.0 V; PG-TO220FP package. Higher Qrr and looser VGS(th) tolerance reduce ZVS margin and require tighter gate drive tuning. Valid for cost-sensitive industrial SMPS where 5–10% lower efficiency and reduced soft-switching margin are acceptable.

Compared with IPW95R310CFD7 and STW95N95F6, IPA95R310PFD7XKSA1 provides superior hard commutation robustness (1300 A/µs vs ≤900 A/µs), lowest Qrr in class, and tightest VGS(th) control-making it the preferred choice for high-reliability, high-frequency resonant converters demanding minimal design margining.

Availability

IPA95R310PFD7XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, high-voltage lighting drivers, and EV auxiliary power units requiring stable component supply, long lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA95R310PFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability resonant and hard-switching power conversion in industrial and lighting applications up to 950 V.

FAQ

What is the maximum continuous drain current for IPA95R310PFD7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.6 A at TC = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limits of the PG-TO220 FP package and ensures safe operation within the 150°C maximum junction temperature rating under sustained load conditions.

Does IPA95R310PFD7XKSA1 require an external gate resistor, and what value is recommended?

Yes, a series gate resistor is required for controlled turn-on/turn-off. The datasheet recommends RG = 5.3 Ω for characterization (Table 9), yielding 13 ns turn-on delay and 10 ns rise time at VDD = 400 V. For production designs, 4.7–6.8 Ω balances switching speed, EMI, and gate driver stress.

How does the integrated body diode differ from standard CoolMOS™ P7 devices?

The PFD7 body diode achieves Qrr = 0.78 µC at 400 V-less than half the 1.6 µC typical of P7-series devices-due to optimized carrier lifetime control and tailored doping profiles. This enables reliable operation in LLC topologies without diode-induced voltage spikes or shoot-through.

Is IPA95R310PFD7XKSA1 suitable for use in high-humidity or outdoor industrial environments?

Yes-the device is fully qualified per JEDEC JESD47 for industrial applications and features 2500 Vrms insulation withstand voltage (1 min, 25°C), confirming robust dielectric integrity. When mounted with conformal coating and proper creepage/clearance layout, it supports IP65-rated enclosure deployments.

IPA95R310PFD7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
950 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
310mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1765 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
31W (Tc)
Operating Temperature:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-313

IPA95R310PFD7XKSA1 FAQ

1.How can I place an order for IPA95R310PFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA95R310PFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA95R310PFD7XKSA1 reliable?

The price and inventory of IPA95R310PFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA95R310PFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA95R310PFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA95R310PFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA95R310PFD7XKSA1?

IPA95R310PFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA95R310PFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA95R310PFD7XKSA1?

For technical support, including IPA95R310PFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA95R310PFD7XKSA1 requirements.

6.How does Aetrix verify that IPA95R310PFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA95R310PFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA95R310PFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA95R310PFD7XKSA1?

All IPA95R310PFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA95R310PFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA95R310PFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPA95R310PFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA95R310PFD7XKSA1 Tags

  • IPA95R310PFD7XKSA1
  • IPA95R310PFD7XKSA1 PDF
  • IPA95R310PFD7XKSA1 Datasheet
  • IPA95R310PFD7XKSA1 Specifications
  • IPA95R310PFD7XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPA95R310PFD7XKSA1
  • Buy IPA95R310PFD7XKSA1
  • IPA95R310PFD7XKSA1 Price
  • IPA95R310PFD7XKSA1 Distributor
  • IPA95R310PFD7XKSA1 Supplier
  • IPA95R310PFD7XKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER