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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPAN60R180P7SXKSA1

Name: IPAN60R180P7SXKSA1
Brand: Infineon Technologies
SKU: IPAN60R180P7SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPAN60R180P7SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPAN60R180P7SXKSA1.pdf

Description:: MOSFET N-CH 600V 18A TO220-FP

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Product details

Overview

IPAN60R180P7SXKSA1 from Infineon Technologies is a 600 V, 180 mΩ superjunction N-channel power MOSFET in PG-TO220 FP package, featuring CoolMOS™ P7 technology. It delivers 53 A pulsed drain current, 25 nC total gate charge, and 900 A/µs body diode commutation speed, optimized for hard-switching PFC and resonant LLC stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPAN60R180P7SXKSA1 datasheet, IPAN60R180P7SXKSA1 pinout, IPAN60R180P7SXKSA1 application, or IPAN60R180P7SXKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, ESD robustness (>2 kV HBM), low ringing tendency in high-dv/dt environments, and validated body diode ruggedness under hard commutation at 400 V.

Technical Context

This device implements Infineon's 7th-generation superjunction architecture with optimized charge balancing for simultaneous reduction of conduction and switching losses. Its 4.85 °C/W junction-to-case thermal resistance and 2500 V_rms isolation rating support direct mounting to heatsinks in isolated topologies.

The MOSFET integrates a fast-recovery body diode (t_rr = 175 ns, Q_rr = 1.3 µC) with 900 A/µs diF/dt capability and exhibits stable gate threshold voltage (3.0–4.0 V) across −40 to 150 °C, enabling reliable gate drive design without active clamping in single-ended converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications
R_DS(on), max	180 mΩ @ T_j = 150 °C - Enables <2.6 W conduction loss at 11 A continuous current
Q_g, typ	25 nC - Supports efficient 100–300 kHz operation with standard 1–2 A gate drivers
E_oss @ 400 V	2.9 µJ - Reduces turn-off energy loss in ZVS and quasi-resonant converters
diF/dt	900 A/µs - Sustains hard commutation in PFC boost diodes without oscillation or failure
T_j, max	150 °C - Allows full-rated operation in compact, convection-cooled server power supplies
R_thJC	4.85 °C/W - Enables thermal design with ≤12 W dissipation at ΔT = 58 °C case-to-heatsink

Pinout & Package

Package: PG-TO220 FP (FullPAK – Narrow Lead), through-hole, isolated heatsink mounting. Drain connected to tab (Pin 2), source on lead (Pin 3), gate on lead (Pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 11 Ω internal gate resistance limits ringing
Pin 2 (Drain)	High-voltage output node	Internally bonded to metal tab; electrically isolated but thermally coupled to heatsink
Pin 3 (Source)	Reference node / return path	Provides low-inductance return for gate drive loop and load current

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for both PFC boost and LLC resonant stages without snubbers or gate damping
Body diode ruggedness	Withstands 900 A/µs commutation stress at 400 V without failure or parameter shift
ESD robustness	HBM >2 kV ensures handling safety and board-level reliability during assembly
Low ringing tendency	Stable switching waveforms at 80 V/ns dv/dt reduce EMI filter burden and layout sensitivity
R_DS(on) × area efficiency	0.180 Ω × mm² footprint enables smaller PCB area vs. prior-gen 600 V MOSFETs

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element controlling boost inductor current and shaping AC input current.

Use Value: 180 mΩ R_DS(on) and 2.9 µJ E_oss enable >98.5% efficiency at full load while maintaining thermal margin at 150 °C junction.

Use Scenario: LLC half-bridge primary switch in 2 kW telecom rectifier with 48 V output.

IC Role / Device Role / Timing Role: Resonant switching transistor delivering zero-voltage turn-on and low-loss transitions.

Use Value: 900 A/µs diF/dt and 175 ns t_rr ensure clean body diode commutation during dead-time, eliminating shoot-through risk.

LCD TV Backlight PSU

Industrial UPS Inverter

Use Scenario: PWM-controlled flyback switch in 200 W LED driver for large-format displays.

IC Role / Device Role / Timing Role: High-side switch regulating energy transfer to secondary-side LED strings.

Use Value: 650 V V_DS@T_j,max provides 50 V margin over 400 V DC link, ensuring long-term reliability under surge conditions.

Use Scenario: H-bridge IGBT replacement in 5 kVA online UPS inverter stage.

IC Role / Device Role / Timing Role: Fast-switching unidirectional power switch in modified sine-wave or pure-sine-wave output stage.

Use Value: 53 A pulsed current rating and 4.85 °C/W R_thJC allow short-duration overload handling without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7	Lower R_DS(on) (99 mΩ), higher Q_g (42 nC), same package	Better conduction loss at high current; requires stronger gate driver	Select when thermal budget is constrained and gate drive capability supports ≥2 A peak
IPP60R180P7	Same R_DS(on), TO-220 (non-FP) package, no isolation	Lower cost; requires insulating washer and careful creepage clearance	Select for non-isolated designs where heatsink isolation is managed externally

Compared with IPAN60R180P7SXKSA1, IPW60R099P7 improves conduction efficiency but increases gate drive demand, while IPP60R180P7 reduces BOM cost at the expense of mandatory external isolation-making the original optimal for isolated, space-constrained, high-reliability PFC stages.

Availability

IPAN60R180P7SXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight PSUs, and industrial UPS inverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified manufacturing traceability.

Supply support for IPAN60R180P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing reduced system size, lower cooling requirements, and simplified EMI compliance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω gate resistor is validated per datasheet test conditions (td(on)/td(off) measurements). Values up to 22 Ω maintain stable switching at ≤200 kHz, but above 33 Ω increase turn-on delay beyond 20 ns and risk incomplete enhancement at high temperature due to V_GS(th) drift.

Can this MOSFET replace older CoolMOS™ P6 devices in existing designs?

Yes-IPAN60R180P7SXKSA1 is a direct drop-in replacement for IPAN60R180P6SXKSA1 with identical pinout, package, and voltage rating. It improves E_oss by 35%, reduces R_DS(on) by 12% at 150 °C, and adds >2 kV HBM ESD protection without layout changes.

Is ferrite bead gating required when paralleling multiple units?

Yes-Infineon recommends individual 10–22 Ω gate resistors plus 100–330 nH ferrite beads per device to suppress high-frequency oscillation and ensure current sharing. Without them, parasitic coupling causes unequal switching and thermal runaway above two parallel units.

Does the body diode support continuous reverse conduction in synchronous rectification?

No-the body diode is rated for commutation only (diF/dt = 900 A/µs, t_rr = 175 ns). For sustained reverse conduction, an external Schottky or SiC diode must be used; the MOSFET itself is not qualified for synchronous rectifier duty in secondary-side applications.

IPAN60R180P7SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 26W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPAN60R180P7SXKSA1 FAQ

1.How can I place an order for IPAN60R180P7SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPAN60R180P7SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPAN60R180P7SXKSA1 reliable?

The price and inventory of IPAN60R180P7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPAN60R180P7SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPAN60R180P7SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPAN60R180P7SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPAN60R180P7SXKSA1?

IPAN60R180P7SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPAN60R180P7SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPAN60R180P7SXKSA1?

For technical support, including IPAN60R180P7SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPAN60R180P7SXKSA1 requirements.

6.How does Aetrix verify that IPAN60R180P7SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPAN60R180P7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPAN60R180P7SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPAN60R180P7SXKSA1?

All IPAN60R180P7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPAN60R180P7SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPAN60R180P7SXKSA1 part is unused and in its original packaging.

Return procedure for IPAN60R180P7SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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