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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPAN60R210PFD7SXKSA1

Name: IPAN60R210PFD7SXKSA1
Brand: Infineon Technologies
SKU: IPAN60R210PFD7SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPAN60R210PFD7SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPAN60R210PFD7SXKSA1.pdf

Description:: MOSFET N-CH 650V 16A TO220

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Product details

Overview

IPAN60R210PFD7SXKSA1 from Infineon Technologies is a 600 V, 210 mΩ superjunction N-channel MOSFET with integrated fast body diode, optimized for ZVS topologies in high-density AC-DC adapters and LED lighting drivers. It delivers 23 nC total gate charge, 2.6 µJ output switching energy at 400 V, and 1300 A/µs diode commutation speed.

For engineers reviewing the IPAN60R210PFD7SXKSA1 datasheet, IPAN60R210PFD7SXKSA1 pinout, IPAN60R210PFD7SXKSA1 application, or IPAN60R210PFD7SXKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, E_oss-driven soft-switching capability, diF/dt ruggedness, and TO-220 FP package thermal performance in slim form-factor designs.

Technical Context

This CoolMOS™ PFD7 device implements a charge-compensated superjunction structure enabling low R_DS(on) (210 mΩ max) while maintaining high dv/dt ruggedness (120 V/ns) and low E_oss (2.6 µJ). Its fast intrinsic body diode supports zero-voltage switching in resonant converters without external antiparallel diodes.

The MOSFET features a gate plateau voltage of 5.7 V, typical input capacitance of 1015 pF, and reverse recovery parameters (Q_rr = 0.34–0.68 µC, t_rr = 87–174 ns) validated under 100 A/µs diF/dt stress - critical for hard-commutated LLC and active-clamp flyback designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V maximum blocking voltage - enables operation in universal-input 85–265 VAC SMPS with 400 V DC bus margin.
R_DS(on),max	210 mΩ at T_j = 150°C - determines conduction loss and heatsink sizing in continuous 16 A drain current applications.
Q_g,typ	23 nC - defines gate drive power requirement and influences switching frequency scalability up to 300 kHz.
E_oss@400V	2.6 µJ - directly reduces turn-on loss in ZVS circuits and enables higher efficiency at elevated frequencies.
diF/dt	1300 A/µs - ensures robust body diode commutation during hard-switched transitions without oscillation or failure.
T_j,max	150°C - sets thermal derating limits and supports operation in sealed, convection-limited enclosures.
R_thJC	5.0 °C/W - enables 25 W power dissipation at 25°C case temperature, supporting compact heatsink integration.

Pinout & Package

IPAN60R210PFD7SXKSA1 uses the PG-TO220 FP (FullPAK – Narrow Lead) package with isolated drain tab. The package provides enhanced creepage/clearance and direct heatsinking via the drain-connected metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V gate drive; 11 Ω internal gate resistance limits ringing and simplifies driver design.
Pin 2 (Drain)	High-side power terminal	Internally connected to metal tab - must be electrically isolated from heatsink unless system ground-referenced.
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	Enables high-efficiency, high-frequency operation in space-constrained adapters without sacrificing thermal headroom.
Fast, soft-recovery body diode	Reduces snubber losses and EMI in resonant topologies; eliminates need for discrete antiparallel diode in many ZVS designs.
1300 A/µs diF/dt rating	Supports reliable commutation in hard-switched motor drives and industrial inverters without gate clamping or layout compromises.
JEDEC-qualified reliability	Validated for long-term operation in consumer-grade power supplies per industry-standard stress test protocols.

Applications

USB PD Fast Charger

Smart LED Driver

Use Scenario: 65 W USB-C PD adapter with active-clamp flyback topology operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus and delivering 16 A pulsed drain current.

Use Value: Low E_oss and fast body diode enable >94% efficiency at full load while meeting CISPR-32 conducted EMI limits.

Use Scenario: Dimmable constant-current LED driver for commercial downlights using quasi-resonant buck-boost architecture.

IC Role / Device Role / Timing Role: Main switching element controlling 400 V input with 1300 A/µs diode commutation during valley switching.

Use Value: High diF/dt rating prevents diode-induced shoot-through and allows stable dimming down to 1% without flicker.

BLDC Motor Inverter

Industrial Power Supply

Use Scenario: 300 W sensorless BLDC inverter for HVAC blowers, operating with 6-step commutation at 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching device with synchronous body diode conduction during freewheeling intervals.

Use Value: 1.0 V typical V_SD and 87 ns t_rr minimize conduction loss and reduce heat generation in sealed motor housings.

Use Scenario: 200 W open-frame industrial SMPS with dual forward topology and 150°C ambient requirement.

IC Role / Device Role / Timing Role: Primary switch rated for continuous 10 A drain current at 100°C case temperature.

Use Value: 5.0 °C/W R_thJC and 150°C T_j,max allow operation without forced air cooling in DIN-rail mounted enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7	Lower R_DS(on) (99 mΩ), higher Q_g (44 nC), same 600 V rating and PFD7 platform.	Better conduction loss but higher gate drive loss; suited for lower-frequency, high-current designs.	Select when thermal budget favors lower R_DS(on) over switching loss, e.g., <100 kHz fixed-frequency PSUs.
IPP60R190P7	Higher R_DS(on) (190 mΩ), lower Q_g (19 nC), identical package and diF/dt rating.	Improved switching efficiency at high frequency but requires larger heatsink for same current.	Select when ZVS operation dominates loss profile and board space limits heatsink area, e.g., ultra-slim adapters.

Compared with IPW60R099P7 and IPP60R190P7, IPAN60R210PFD7SXKSA1 offers the optimal balance of conduction and switching loss for 200–300 kHz ZVS designs where both E_oss and R_DS(on) critically impact total system efficiency and thermal footprint.

Availability

IPAN60R210PFD7SXKSA1 is available at Aetrix Electronics and suitable for USB PD fast chargers, smart LED drivers, BLDC motor inverters, and industrial power supplies requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPAN60R210PFD7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for cost-sensitive, high-power-density consumer and industrial SMPS applications demanding high efficiency and robust body diode performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies a 10.2 Ω gate resistor for characterization. For stable operation with minimal overshoot, a 10–22 Ω non-inductive resistor is recommended. Values above 33 Ω increase switching time and may compromise ZVS behavior in resonant topologies.

Can this MOSFET be paralleled for higher current handling?

Yes, but only with strict layout symmetry and individual gate ferrite beads (or separate totem-pole drivers) per device to prevent dynamic current imbalance. The datasheet explicitly recommends ferrite beads on each gate line to suppress oscillation during paralleling.

Is the drain tab electrically isolated from the package leads?

No - Pin 2 (Drain) is internally bonded to the metal tab. The tab must be electrically isolated from the heatsink unless the system design intentionally references the drain to chassis ground. Creepage distance meets 2500 V_rms isolation requirements.

Does the body diode require external snubbing in ZVS applications?

No - the fast, soft-recovery body diode (t_rr = 87–174 ns, Q_rr = 0.34–0.68 µC) is designed for clean commutation in ZVS topologies. Snubbers are unnecessary unless layout parasitics induce excessive voltage overshoot beyond the 650 V V_DS rating.

IPAN60R210PFD7SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™PFD7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1015 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPAN60R210PFD7SXKSA1 FAQ

1.How can I place an order for IPAN60R210PFD7SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPAN60R210PFD7SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPAN60R210PFD7SXKSA1 reliable?

The price and inventory of IPAN60R210PFD7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPAN60R210PFD7SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPAN60R210PFD7SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPAN60R210PFD7SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPAN60R210PFD7SXKSA1?

IPAN60R210PFD7SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPAN60R210PFD7SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPAN60R210PFD7SXKSA1?

For technical support, including IPAN60R210PFD7SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPAN60R210PFD7SXKSA1 requirements.

6.How does Aetrix verify that IPAN60R210PFD7SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPAN60R210PFD7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPAN60R210PFD7SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPAN60R210PFD7SXKSA1?

All IPAN60R210PFD7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPAN60R210PFD7SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPAN60R210PFD7SXKSA1 part is unused and in its original packaging.

Return procedure for IPAN60R210PFD7SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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