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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB011N04LGATMA1

Name: IPB011N04LGATMA1
Brand: Infineon Technologies
SKU: IPB011N04LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB011N04LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB011N04LGATMA1.pdf

Description:: MOSFET N-CH 40V 180A TO263-7

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Product details

Overview

IPB011N04LGATMA1 from Infineon Technologies is a 40 V, 100 A (continuous), 185 A (pulsed) N-channel Trench MOSFET in PG-TO263-7 package with 1.1 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC power stages in server VRMs and telecom rectifiers.

For engineers reviewing the IPB011N04LGATMA1 datasheet, IPB011N04LGATMA1 pinout, IPB011N04LGATMA1 application, or IPB011N04LGATMA1 equivalent, key selection criteria include low R_DS(on), fast switching (t_on = 18 ns, t_off = 29 ns), gate charge (Q_g = 120 nC), thermal resistance (R_thJC = 0.5 K/W), and TO-263-7L package compatibility with high-current PCB layouts.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology, featuring trench-gate superjunction structure for minimized conduction and switching losses. It supports synchronous rectification and high-frequency PWM operation up to 1 MHz in buck converters.

The MOSFET is specified for 100% avalanche-tested ruggedness, with E_AS = 510 mJ at T_j = 25°C and guaranteed gate oxide reliability under repetitive unclamped inductive switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - supports 12 V and 48 V input bus architectures with margin.
R_DS(on) @ V_GS = 10 V	1.1 mΩ typical - enables <1 W conduction loss at 100 A continuous current in VRM phases.
I_D (cont) @ T_C = 25°C	100 A - rated for high-current power stages without forced airflow in baseplate-cooled designs.
Q_g	120 nC - balances switching speed and gate driver power requirement for 500 kHz–1 MHz operation.
R_thJC	0.5 K/W - allows junction temperature rise of only 50 K at 100 W dissipation, supporting compact thermal design.
E_AS	510 mJ - ensures robustness against inductive load transients in synchronous buck and OR-ing applications.

Pinout & Package

IPB011N04LGATMA1 is housed in PG-TO263-7 (TO-263-7L) surface-mount package with exposed drain pad for enhanced thermal performance and 7-pin layout enabling Kelvin source sensing.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Main source terminal	Primary current return path; tied to PCB ground plane for low-inductance layout.
2 (Gate)	Control input	Drives channel conduction; requires <120 nC charge for full enhancement at 10 V.
3 (Kelvin Source)	Sense reference	Provides isolated feedback for accurate gate drive referencing, minimizing source inductance effects.
4–7 (Drain)	Power output	Four parallel drain terminals connected to large copper area for <0.5 K/W thermal resistance.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Enables 1.1 mΩ R_DS(on) in TO-263-7, reducing conduction loss by 25% vs. prior-gen 40 V MOSFETs.
Kelvin source connection	Eliminates source inductance impact on gate control, improving stability in high-dI/dt synchronous rectifiers.
100% avalanche rated	Guarantees safe operation under unclamped inductive switching up to 510 mJ, no derating required.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3), suitable for standard reflow assembly.

Applications

Server VRM Phase Legs

Telecom 48 V Rectifiers

Use Scenario: High-density 48 V-to-12 V/1 V point-of-load conversion in dual-processor servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 600 kHz PWM frequency with 100 A peak phase current.

Use Value: 1.1 mΩ R_DS(on) reduces conduction loss to <1.1 W per phase, enabling >95% efficiency at full load.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom AC/DC front-end supplies.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward or LLC resonant converter secondary stage.

Use Value: Kelvin source minimizes gate oscillation during fast turn-off, improving cross-conduction immunity at 300–500 kHz.

Industrial Motor Drives

OR-ing Diode Replacement

Use Scenario: Half-bridge inverter stage for 2 kW servo drives requiring 100 A peak motor current.

IC Role / Device Role / Timing Role: Low-side switching element with fast t_off = 29 ns to support precise PWM dead-time control.

Use Value: 510 mJ E_AS rating withstands motor back-EMF spikes without snubbers, simplifying board layout.

Use Scenario: Hot-swap and redundancy management in 12 V/48 V redundant power systems.

IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes in dual-input power distribution units.

Use Value: 1.1 mΩ R_DS(on) cuts forward voltage drop from 0.45 V to <11 mV at 100 A, reducing heat generation by >97%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 2.2 mΩ @ 10 V; TO-220 package; no Kelvin source; R_thJC = 0.8 K/W.	Lower current density; unsuitable for >70 A continuous without heatsink; limited to lower-frequency (<300 kHz) designs.	Select when cost sensitivity outweighs efficiency and board space constraints.
STL220N4F7AG	R_DS(on) = 0.95 mΩ @ 10 V; PowerFLAT 8x8 HV package; no Kelvin source; R_thJC = 0.75 K/W.	Higher current capability but lacks Kelvin sensing; less robust E_AS (320 mJ); not qualified for industrial temp range.	Prefer for space-constrained consumer power supplies where Kelvin sensing is unnecessary.

Compared with IRFB4115PBF and STL220N4F7AG, IPB011N04LGATMA1 uniquely combines ultra-low R_DS(on), Kelvin source, 100% avalanche rating, and industry-leading thermal resistance-making it the only choice for high-reliability, high-frequency, high-current server and telecom power stages.

Availability

IPB011N04LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPB011N04LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and telecom infrastructure where thermal density and switching loss are critical.

FAQ

What is the maximum recommended gate voltage for IPB011N04LGATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is fully enhanced at V_GS = 10 V. Operation above 15 V provides no R_DS(on) benefit and increases gate oxide stress risk. Recommended drive is 12 V with tight tolerance (±0.5 V) to ensure consistent threshold margin across temperature.

Does IPB011N04LGATMA1 require a gate resistor for stability?

Yes-a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended between driver output and Gate pin (Pin 2) to dampen ringing caused by trace inductance and Miller capacitance. The Kelvin Source (Pin 3) must be routed separately with minimal loop area to preserve gate control fidelity.

Can IPB011N04LGATMA1 be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) enables natural current sharing. For reliable paralleling, match gate drive timing within 2 ns, use symmetric PCB layout with equal-length source/drain traces, and connect Kelvin Sources individually to avoid shared impedance coupling.

Is the PG-TO263-7 package lead-free compatible with standard reflow profiles?

Yes-the device complies with JEDEC J-STD-020D MSL Level 3 and supports peak reflow temperatures up to 260°C. Its solderable terminations use matte tin plating over nickel barrier, ensuring compatibility with SAC305 and SnPb pastes without voiding or delamination.

IPB011N04LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 346 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 29000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB011N04LGATMA1 FAQ

1.How can I place an order for IPB011N04LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB011N04LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB011N04LGATMA1 reliable?

The price and inventory of IPB011N04LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB011N04LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB011N04LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB011N04LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB011N04LGATMA1?

IPB011N04LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB011N04LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB011N04LGATMA1?

For technical support, including IPB011N04LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB011N04LGATMA1 requirements.

6.How does Aetrix verify that IPB011N04LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB011N04LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB011N04LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB011N04LGATMA1?

All IPB011N04LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB011N04LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB011N04LGATMA1 part is unused and in its original packaging.

Return procedure for IPB011N04LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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