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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB012N04NF2SATMA1

Name: IPB012N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPB012N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB012N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB012N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

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Product details

Overview

IPB012N04NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, rated for 40 V drain-source voltage, 1.25 mΩ maximum R_DS(on) at V_GS = 10 V, and 199 A continuous drain current. It serves as a high-efficiency power switch in synchronous buck converters, motor drives, and DC-DC modules where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IPB012N04NF2SATMA1 datasheet, IPB012N04NF2SATMA1 pinout, IPB012N04NF2SATMA1 application, or IPB012N04NF2SATMA1 equivalent, key selection criteria include its 176 nC total output charge (Q_oss), 159 nC gate charge (0–10 V), 0.51 °C/W junction-to-case thermal resistance, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This StrongIRFET™2 device employs trench-gate silicon technology optimized for low R_DS(on) × Q_g figure-of-merit in high-current, high-frequency switching applications. Its gate threshold voltage (2.1–3.4 V) enables direct drive from standard 3.3 V/5 V logic controllers without level-shifting.

The integrated body diode exhibits 0.83–1.0 V forward voltage at 100 A and 55 ns reverse recovery time under dI/dt = 100 A/μs, supporting efficient synchronous rectification and hard-switched topologies with minimal commutation loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input systems
R_DS(on), max	1.25 mΩ at V_GS = 10 V - Enables <1.3 W conduction loss at 100 A
I_D, cont	199 A at T_C = 25 °C - Supports high-current power stages with minimal paralleling
Q_oss	176 nC - Low output capacitance reduces turn-off energy and EMI in hard-switched converters
R_thJC	0.51 °C/W - Allows >250 W power dissipation with modest heatsinking
E_AS	637 mJ - Fully rated single-pulse avalanche energy ensures ruggedness in inductive load switching
Q_g (0–10 V)	159 nC - Optimized gate charge supports efficient 100–500 kHz operation with standard gate drivers

Pinout & Package

IPB012N04NF2SATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab), and Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V absolute max rating; low gate resistance (2.5 Ω typ.) minimizes ringing
Pin 2 (Drain / Tab)	Main power output node	Exposed copper tab provides primary thermal path and low-inductance high-current return; electrically connected to drain
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate drive; must be routed with low inductance to minimize switching overshoot

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive switching stress without derating
Pb-free, RoHS & halogen-free	Complies with IEC61249-2-21 and global environmental regulations for industrial and automotive use
StrongIRFET™2 trench technology	Delivers best-in-class R_DS(on) × Q_g trade-off for high-frequency power conversion
Optimized for wide range of applications	Validated across motor control, server VRMs, solar inverters, and industrial SMPS

Applications

Server Voltage Regulator Modules (VRMs)

Industrial Motor Drives

Use Scenario: High-density, multi-phase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) at up to 600 A per rail.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side power switch operating at 300–600 kHz with tight dead-time control.

Use Value: 1.25 mΩ R_DS(on) and 159 nC Q_g enable >95% efficiency at full load while minimizing thermal footprint on PCB.

Use Scenario: Three-phase inverter stage for 3–7.5 kW PMSM/BLDC motors in CNC machines and pumps.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid or all-MOSFET inverter legs.

Use Value: 637 mJ avalanche energy and 175 °C max junction temperature ensure reliable operation during motor stall or short-circuit events.

Solar Microinverters

Automotive DC-DC Converters

Use Scenario: Isolated DC-DC stage converting 40–60 V PV string voltage to 380 V bus in single-phase microinverter designs.

IC Role / Device Role / Timing Role: Primary switch in interleaved flyback or active clamp forward topology.

Use Value: Low Q_oss (176 nC) reduces turn-off losses at 100–200 kHz, improving partial-load efficiency critical for variable irradiance conditions.

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: High-current synchronous rectifier in dual-active-bridge (DAB) topology.

Use Value: Body diode t_rr = 55 ns and V_SD = 0.83 V at 100 A reduce reverse recovery loss and conduction loss during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ (lower), Q_g = 180 nC (higher), TO-263 package	Better conduction loss but higher gate drive demand; less optimized for high-frequency switching	Prefer when thermal budget is tighter than drive capability; verify gate driver peak current ≥5 A
IXTP180N045T	R_DS(on) = 1.8 mΩ (higher), Q_g = 110 nC (lower), TO-220 package	Lower switching loss but higher conduction loss; limited to ≤100 A continuous due to package thermal limits	Prefer for cost-sensitive, lower-current (<80 A), forced-air-cooled designs where layout simplicity outweighs efficiency

Compared with STL220N4F7AG and IXTP180N045T, IPB012N04NF2SATMA1 delivers balanced performance: lowest R_DS(on) × Q_g product among the three, JEDEC-qualified reliability, and D²PAK thermal interface ideal for automated assembly and high-power density layouts.

Availability

IPB012N04NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB012N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family, engineered specifically for high-efficiency, high-current power conversion in data center, renewable energy, and industrial automation systems.

FAQ

What is the maximum allowable gate-source voltage for IPB012N04NF2SATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) optimization, with minimum 4.2 V gate plateau voltage ensuring reliable turn-on even with driver voltage drop.

Does IPB012N04NF2SATMA1 require a gate resistor for stability?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen parasitic oscillation caused by gate-drain Miller capacitance and PCB inductance. The device's 2.5 Ω typical gate resistance alone is insufficient for stable 100+ kHz switching without external damping.

Can IPB012N04NF2SATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 6 in datasheet) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical source inductance, and shared thermal mounting to avoid thermal runaway.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the drain tab is internally connected to Pin 2 (Drain) and must be electrically isolated from the PCB ground plane using insulating thermal pads or ceramic substrates. Direct soldering to copper pour creates a short unless the pour is designated as drain potential.

IPB012N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 41A (Ta), 197A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.25mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 189µA

Gate Charge (Qg) (Max) @ Vgs:: 239 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB012N04NF2SATMA1 FAQ

1.How can I place an order for IPB012N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB012N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB012N04NF2SATMA1 reliable?

The price and inventory of IPB012N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB012N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB012N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB012N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB012N04NF2SATMA1?

IPB012N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB012N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB012N04NF2SATMA1?

For technical support, including IPB012N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB012N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPB012N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB012N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB012N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB012N04NF2SATMA1?

All IPB012N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB012N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB012N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB012N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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