Infineon Technologies IPB013N06NF2SATMA1

Overview

IPB013N06NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, rated for 60 V drain-source voltage, 1.3 mΩ typical R_DS(on) at V_GS = 10 V, and 200 A continuous drain current. It serves as a high-current synchronous rectifier or main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPB013N06NF2SATMA1 datasheet, IPB013N06NF2SATMA1 pinout, IPB013N06NF2SATMA1 application, or IPB013N06NF2SATMA1 equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 203 nC total gate charge, 100% avalanche-tested ruggedness, and RoHS/halogen-free compliance for high-reliability power stages.

Technical Context

This StrongIRFET™2 device uses trench-gate silicon technology optimized for low conduction and switching losses in hard-switched and synchronous rectification topologies. Its gate threshold voltage (2.1–3.3 V) ensures robust turn-on with standard 5 V or 10 V gate drivers, while its 85 pF reverse transfer capacitance (C_rss) supports fast, low-noise switching at up to 1 MHz.

The integrated body diode exhibits 0.86 V forward voltage at 100 A and 57 ns reverse recovery time under 100 A/μs di/dt - enabling efficient freewheeling in buck, half-bridge, and LLC resonant converters without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper drain pad for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Compared with STL220N6F7 and IXFH180N60X3, IPB013N06NF2SATMA1 delivers the lowest R_DS(on) × Q_g figure-of-merit (264 mΩ·nC), enabling superior efficiency in high-frequency, high-current applications where thermal and gate drive constraints dominate.

Availability

IPB013N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, automotive on-board chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IPB013N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 family, engineered specifically for high-efficiency, high-reliability power conversion in datacenter, industrial automation, and electric vehicle infrastructure applications.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For sustained 200 A operation, thermal design must maintain case temperature ≤150 °C to ensure 10-year lifetime reliability under JEDEC qualification conditions, considering 0.4 °C/W R_thJC and system-level cooling capability.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the drain tab is internally connected to Pin 2 and forms the primary current and thermal path. It must be soldered directly to a large copper pour or heatsink, and isolation is achieved only via dielectric thermal interface material between the tab and external heatsink, not by PCB layout.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No - the device has a gate threshold voltage of 2.1–3.3 V and is designed for 0 V to 10 V gate drive. A negative turn-off voltage is not required; however, a gate resistor ≤10 Ω and local gate capacitor near the source pad are recommended to suppress ringing in >100 V/ns switching environments.

Can IPB013N06NF2SATMA1 replace IPB015N06N in existing designs?

Yes - it is a direct upgrade: identical D²PAK package, same pinout, and improved specs (1.3 mΩ vs. 1.5 mΩ R_DS(on), 203 nC vs. 210 nC Q_g). No layout changes are needed, and efficiency gains of 0.3–0.5% are measurable at full load in VRM and motor drive applications.