Infineon Technologies IPB015N06NF2SATMA1

Overview

IPB015N06NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, rated for 60 V drain-source voltage, 1.5 mΩ maximum R_DS(on) at V_GS = 10 V, and 197 A continuous drain current at T_C = 25 °C. It serves as a high-current synchronous rectifier or primary-side switch in DC-DC converters and motor drives.

For engineers reviewing the IPB015N06NF2SATMA1 datasheet, IPB015N06NF2SATMA1 pinout, IPB015N06NF2SATMA1 application, or IPB015N06NF2SATMA1 equivalent, key selection criteria include its 155 nC total gate charge, 0.51 °C/W junction-to-case thermal resistance, 100% avalanche-tested ruggedness, and RoHS/halogen-free compliance for industrial power systems.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its gate plateau voltage of 4.4 V enables stable turn-on under varying drive conditions, and its output charge (Q_oss) of 153 nC supports efficient snubberless operation in synchronous buck stages.

The MOSFET features integrated body diode with 51 ns reverse recovery time at dI/dt = 100 A/μs and 0.88 V typical forward voltage at 100 A - enabling bidirectional current handling in half-bridge and LLC resonant configurations without external diodes.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab (drain-connected), standard footprint compatible with automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6F7 and IXFH180N60X3, IPB015N06NF2SATMA1 offers optimal balance of ultra-low R_DS(on), moderate Q_g, and validated 60 V rating - making it uniquely suited for high-current, medium-voltage industrial and computing power stages where both efficiency and reliability are critical.

Availability

IPB015N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and battery protection circuits requiring stable component supply and long-term production continuity.

Supply support for IPB015N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™2 product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems where low R_DS(on) and rugged avalanche performance are mandatory.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for full enhancement and minimal R_DS(on). Operating above 12 V provides no significant R_DS(on) improvement and increases gate oxide stress risk. For robustness in noisy environments, a 12 V clamp is advised, with 10 V drive ensuring optimal conduction loss and lifetime reliability.

Is this MOSFET suitable for synchronous rectification in a 48 V input buck converter?

Yes - its 60 V V_DS rating provides 20% margin over 48 V bus, 1.5 mΩ R_DS(on) minimizes conduction loss at high load currents, and its fast body diode (51 ns t_rr) enables clean commutation. The 155 nC Q_g is compatible with standard gate drivers like UCC27531 or IRS2007, supporting efficient operation up to 500 kHz.

How does the 100% avalanche testing impact real-world reliability?

Each unit undergoes single-pulse avalanche stress at rated current and voltage, verifying ability to absorb inductive energy without parametric shift or failure. In practice, this translates to field-proven resilience in motor drive H-bridges and relay-driving circuits where unclamped inductive kickback occurs - eliminating need for external snubbers in many industrial designs.

Can the exposed drain tab be electrically isolated from the heatsink?

No - the tab is internally bonded to the drain terminal and must be electrically connected to the drain net. If isolation from the heatsink is required, a thermally conductive but electrically insulating pad (e.g., ceramic or silicone-based) must be used. Mechanical mounting pressure and thermal interface material thickness directly affect R_thJC performance, so follow Infineon's recommended torque and pad specifications.