Infineon Technologies IPB016N06L3GATMA1

Overview

IPB016N06L3GATMA1 from Infineon Technologies is a 60 V, 100 A (T_C=25°C), logic-level N-channel Trench MOSFET in PG-TO263-7 package with R_DS(on) = 1.6 mΩ (max @ V_GS = 10 V), optimized for high-efficiency DC-DC converters and motor control inverters in industrial power supplies.

For engineers reviewing the IPB016N06L3GATMA1 datasheet, IPB016N06L3GATMA1 pinout, IPB016N06L3GATMA1 application, or IPB016N06L3GATMA1 equivalent, key selection criteria include continuous drain current rating, gate charge (Q_g = 165 nC), thermal resistance (R_thJC = 0.45 K/W), and avalanche energy rating (E_AS = 580 mJ).

Technical Context

This device uses Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch to achieve low on-resistance and fast switching with controlled gate charge profile. Its logic-level gate threshold (V_GS(th) = 1.6–2.6 V) enables direct drive from 3.3 V/5 V controllers without level-shifting.

The MOSFET supports unclamped inductive switching (UIS) with guaranteed single-pulse avalanche energy of 580 mJ at T_J = 25°C and features integrated ESD protection (HBM Class 3A). It is qualified per AEC-Q101 and compliant with RoHS and halogen-free standards.

Key Specifications

Pinout & Package

IPB016N06L3GATMA1 is housed in PG-TO263-7 (D²PAK-7) surface-mount package with exposed drain pad for enhanced thermal performance. The package features 7 terminals: 3 drain pins (D1–D3), 1 source pin (S), 1 gate pin (G), and 2 sense-source pins (S1, S2) for Kelvin source connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Compared with STL220N6F7AG and IXFH100N60X3, IPB016N06L3GATMA1 delivers superior thermal performance (0.45 K/W), lower conduction loss (1.6 mΩ), and Kelvin source architecture-making it optimal for space-constrained, high-reliability 100 A+ applications where gate drive stability and avalanche robustness are critical.

Availability

IPB016N06L3GATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, onboard EV chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IPB016N06L3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-current power conversion in industrial automation, e-mobility, and datacenter infrastructure-emphasizing low R_DS(on), fast switching, and ruggedness under repetitive stress.

FAQ

What is the maximum continuous drain current for IPB016N06L3GATMA1 at T_C = 100°C?

The maximum continuous drain current is 72 A at T_C = 100°C, derated from 100 A at 25°C using the specified thermal resistance (R_thJC = 0.45 K/W) and maximum junction temperature (T_J(max) = 175°C). This value is confirmed in Figure 8 of the official Infineon datasheet Rev. 2.1.

Does IPB016N06L3GATMA1 support paralleling without external gate resistors?

No-while its matched threshold voltage and low gate charge support paralleling, external individual gate resistors (typically 2.2–4.7 Ω) are required to suppress dynamic current imbalance caused by layout asymmetry and parasitic inductance. The Kelvin source configuration does not eliminate the need for gate resistor matching.

Can this MOSFET be used in linear mode (constant-current regulation)?

It is not recommended for sustained linear-mode operation. Although rated for 175°C junction temperature, its Safe Operating Area (SOA) curve limits linear use to short pulses (<10 ms) at low V_DS. Continuous linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) above 100°C.

What is the purpose of the two sense-source pins (S1 and S2) in the PG-TO263-7 package?

S1 and S2 provide Kelvin connection to the source potential, isolating gate drive reference from high-current source path inductance. This prevents false turn-off during high dI/dt events and ensures consistent switching timing-critical in multi-phase inverters and high-frequency VRMs where layout-induced noise would otherwise degrade performance.