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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB016N08NF2SATMA1

Name: IPB016N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPB016N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB016N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB016N08NF2SATMA1.pdf

Description:: TRENCH 40<-<100V PG-TO263-3

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Product details

Overview

IPB016N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, rated for 80 V V_DS, 1.65 mΩ R_DS(on) max at V_GS = 10 V, and 170 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (170 nC), and integrated Schottky-like body diode with 383 nC Q_rr, targeting high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IPB016N08NF2SATMA1 datasheet, IPB016N08NF2SATMA1 pinout, IPB016N08NF2SATMA1 application, or IPB016N08NF2SATMA1 equivalent, key selection criteria include its 1.65 mΩ on-resistance at 100 A, 199 nC Q_oss, 48 ns t_rr, JEDEC-qualified reliability, and D²PAK thermal performance with R_thJC = 0.5 °C/W.

Technical Context

This MOSFET employs Infineon's StrongIRFET™ 2 technology, optimized for high-current, low-voltage switching in hard-switched and synchronous rectifier topologies. Its gate threshold voltage (2.2–3.8 V) enables robust drive compatibility with standard 5 V and 10 V controllers, while the 4.5 V gate plateau supports stable Miller region control during switching transitions.

The device integrates a fast-recovery body diode (t_rr = 48 ns, Q_rr = 383 nC) with low forward voltage (V_SD = 0.87 V typ. at 100 A), minimizing reverse recovery losses in buck and LLC secondary-side applications. Thermal design leverages the exposed drain tab for direct heatsink mounting, achieving 300 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus systems with 20 % margin
R_DS(on), max	1.65 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.7 W conduction loss at 100 A
I_D, cont	170 A at T_C = 25 °C - Supports high-current POL converters without paralleling
Q_g	170 nC - Determines gate driver current requirement (~1.7 A avg for 100 ns turn-on)
Q_oss	199 nC - Directly impacts turn-off energy loss in hard-switched applications
t_rr	48 ns - Limits diode reverse recovery stress and EMI generation in sync-FET operation
R_thJC	0.5 °C/W - Enables efficient heat transfer to heatsink; 150 °C junction rise at 300 W

Pinout & Package

IPB016N08NF2SATMA1 uses the PG-TO263-3 (D²PAK) package with an exposed drain tab for thermal and electrical connection. The plastic body isolates Gate and Source terminals, while the metal tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires low-inductance routing due to 170 nC Q_g
Pin 2 (Drain) / Tab	Main current path (high-side or low-side)	Exposed copper tab serves as primary drain connection and thermal interface to heatsink
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current and gate loop; critical for Kelvin source layout in high-di/dt designs

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 1125 mJ, enabling robustness against inductive switching faults
Low Q_gd/Q_g ratio	Q_gd = 36 nC of total Q_g = 170 nC - improves switching speed control and reduces Miller-induced shoot-through risk
Optimized body diode	V_SD = 0.87 V @ 100 A, t_rr = 48 ns - reduces reverse recovery loss vs. standard MOSFETs in synchronous rectification
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - meets industrial and automotive environmental compliance requirements

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load (POL) converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter operating at 300–600 kHz.

Use Value: 1.65 mΩ R_DS(on) and 199 nC Q_oss reduce conduction + switching losses, enabling >95 % efficiency at 100 A output.

Use Scenario: Inverter leg low-side switch in 24–48 V BLDC motor drives for factory automation.

IC Role / Device Role / Timing Role: High-current, hard-switched power stage switch with integrated freewheeling path.

Use Value: 136 A continuous body diode current and 48 ns t_rr minimize commutation loss and voltage spikes during PWM dead-time.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switch in resonant LLC half-bridge for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: High-efficiency, zero-voltage switching (ZVS) capable main switch with low C_oss.

Use Value: C_oss = 1900 pF and Q_oss = 199 nC support reliable ZVS across wide load range up to 3 kW.

Use Scenario: Secondary-side synchronous rectifier in isolated DC-DC stage of 3.3 kW OBC.

IC Role / Device Role / Timing Role: Low-loss, high-current rectifying element replacing Schottky diodes in 400 V–48 V conversion.

Use Value: 170 A rating and 0.87 V V_SD cut forward conduction loss by >40 % versus 150 A discrete Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 1.45 mΩ, Q_g = 165 nC, TO-263 package, no specified Q_rr or t_rr	Lacks published body diode recovery specs - unsuitable where reverse recovery loss dominates	Prefer for pure low-R_DS(on) switching; avoid in synchronous rectification without external diode clamping
IXFH180N08S4	R_DS(on) = 1.8 mΩ, Q_g = 210 nC, TO-247 package, t_rr = 65 ns	Larger footprint and higher Q_g increase gate drive loss and layout complexity	Choose only when TO-247 mechanical fit or higher surge rating (EAS = 1500 mJ) is mandatory

Compared with STL220N8F7AG and IXFH180N08S4, IPB016N08NF2SATMA1 delivers superior body diode performance (48 ns t_rr, 383 nC Q_rr) and lower Q_g/R_DS(on) ratio in a thermally optimized D²PAK, making it optimal for high-frequency synchronous rectification where diode recovery and gate loss are co-critical.

Availability

IPB016N08NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant packaging.

Supply support for IPB016N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and SiC power devices.

This part belongs to the StrongIRFET™ 2 Power-Transistor product line, engineered for high-current, low-voltage DC-DC conversion in datacenter, industrial, and transportation power systems where conduction loss, switching efficiency, and ruggedness are co-optimized.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when thermal design maintains T_j ≤ 175 °C under worst-case ambient and power dissipation conditions. Derating curves in the datasheet show allowable I_D reduction above T_C = 25 °C.

Is IPB016N08NF2SATMA1 suitable for synchronous rectification in LLC converters?

Yes - its 48 ns reverse recovery time, 383 nC Q_rr, and low 0.87 V body diode forward voltage make it well-suited for secondary-side synchronous rectification in LLC converters operating up to 1 MHz, provided gate timing accounts for its 4.5 V plateau voltage and 36 nC Q_gd.

Does this MOSFET require a negative gate voltage for safe turn-off?

No - the device has a gate threshold voltage range of 2.2–3.8 V and is designed for standard 0 V/10 V or 0 V/12 V gate drive. A negative turn-off voltage is not required, though a small negative bias (e.g., –2 V) may improve noise immunity in high-dV/dt environments.

How does the D²PAK package compare to TO-220 in thermal performance?

The D²PAK (PG-TO263-3) offers significantly lower R_thJC (0.5 °C/W) than standard TO-220 (typically 1.0–1.5 °C/W) due to its larger copper drain tab and optimized internal bond wire layout, enabling ~2× higher power dissipation at the same case temperature when mounted on an equivalent heatsink.

IPB016N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.65mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 267µA

Gate Charge (Qg) (Max) @ Vgs:: 255 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB016N08NF2SATMA1 FAQ

1.How can I place an order for IPB016N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB016N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB016N08NF2SATMA1 reliable?

The price and inventory of IPB016N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB016N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB016N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB016N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB016N08NF2SATMA1?

IPB016N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB016N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB016N08NF2SATMA1?

For technical support, including IPB016N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB016N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPB016N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB016N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB016N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB016N08NF2SATMA1?

All IPB016N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB016N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB016N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB016N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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