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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB019N08NF2SATMA1

Name: IPB019N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPB019N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB019N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB019N08NF2SATMA1.pdf

Description:: TRENCH 40<-<100V PG-TO263-3

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Product details

Overview

IPB019N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, rated for 80 V V_DS, 1.95 mΩ R_DS(on) max at V_GS = 10 V, and 166 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (124 nC), and integrated Schottky-like body diode with 285 nC Q_rr, optimized for high-efficiency synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPB019N08NF2SATMA1 datasheet, IPB019N08NF2SATMA1 pinout, IPB019N08NF2SATMA1 application, or IPB019N08NF2SATMA1 equivalent, key selection criteria include its 1.95 mΩ on-resistance at 100 A, 145 nC Q_oss, 44 ns t_rr, thermal resistance R_thJC = 0.6 °C/W, and D²PAK drain-tab layout enabling high-current PCB conduction paths.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 21 ns, t_f = 26 ns) and low gate charge (Q_g = 124 nC). Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive, and the integrated body diode exhibits low V_SD (0.88 V typ. at 100 A) and controlled reverse recovery (Q_rr = 285 nC).

The MOSFET is qualified per JEDEC standards for industrial temperature range (−55 to +175 °C), with thermal design enabled by a low junction-to-case resistance (0.6 °C/W) and specified safe operating area up to 664 A pulsed current. Its halogen-free, Pb-free construction complies with RoHS Directive 2011/65/EU.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(on), max	1.95 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.95 W conduction loss at 100 A, critical for high-current power stages.
I_D, cont	166 A at T_C = 25 °C - Supports high-power motor control and server VRMs without parallel devices.
Q_g	124 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in resonant topologies.
Q_oss	145 nC - Minimizes turn-on energy loss in hard-switched applications like LLC primary-side switches.
t_rr	44 ns - Fast body diode recovery limits shoot-through risk and EMI in synchronous buck converters.
R_thJC	0.6 °C/W - Allows efficient heat transfer to heatsink; enables 250 W dissipation at ΔT = 150 °C.

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, with exposed drain tab for thermal and electrical connection. Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; low input capacitance (C_iss = 8700 pF) eases driver selection.
Pin 2 (Drain / Tab)	Main power output node	Exposed copper tab provides low-inductance, high-current path to PCB copper pour; electrically tied to drain.
Pin 3 (Source)	Reference node for gate drive	Serves as return path for load current and gate loop; must be routed with minimal inductance for stable switching.

Key Features

Feature	Design Value
100% avalanche rated	Withstands 593 mJ single-pulse avalanche energy (E_AS) - eliminates need for external clamping in inductive load switching.
Optimized for synchronous rectification	Low Q_g/Q_gd ratio (124 nC / 26 nC) and 44 ns t_rr enable clean zero-voltage switching in secondary-side FETs.
JEDEC-qualified reliability	Qualified per JESD47 and AEC-Q101 stress tests - validated for industrial and automotive under-hood environments.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU Directive 2011/65/EU - supports green manufacturing and end-of-life compliance.

Applications

Server VRM High-Side Switch

Industrial BLDC Motor Inverter

Use Scenario: Primary-side switch in 48 V input, multiphase buck converter supplying CPU core voltage.

IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: 1.95 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 3.5 mΩ MOSFETs; 124 nC Q_g enables efficient high-frequency operation.

Use Scenario: Phase-leg upper switch in 24–72 V three-phase inverter driving 5–10 kW industrial pump motor.

IC Role / Device Role / Timing Role: Hard-switched N-channel power switch with integrated body diode conducting freewheeling current.

Use Value: 44 ns t_rr and 285 nC Q_rr reduce diode switching loss and EMI; 166 A rating avoids paralleling in mid-power designs.

Telecom PSU Primary Switch

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Main switch in active clamp forward or LLC resonant converter for 54 V telecom rectifiers.

IC Role / Device Role / Timing Role: High-voltage, high-current switch handling 80 V blocking and 100+ A peak currents.

Use Value: 80 V V_DS rating accommodates 54 V bus with 50% transient margin; 0.6 °C/W R_thJC sustains full load at 85 °C ambient.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC stage operating from 200–450 V DC link.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switch in continuous conduction mode (CCM) boost topology.

Use Value: Avalanche ruggedness (593 mJ E_AS) withstands line surges; 1.95 mΩ R_DS(on) maintains >98.5% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7	R_DS(on) = 2.2 mΩ (higher), Q_g = 135 nC (higher), same 80 V rating and D²PAK package	Slightly lower efficiency in high-current, high-frequency apps due to higher losses	Preferred where cost sensitivity outweighs 5–7% conduction loss penalty
IXFH160N08X3	R_DS(on) = 1.8 mΩ (lower), Q_g = 152 nC (higher), TO-247 package (larger footprint, better thermal but no SMT)	Requires through-hole assembly and larger heatsink; not drop-in SMT replacement	Chosen when maximum thermal performance trumps board space constraints

Compared with STL220N8F7 and IXFH160N08X3, IPB019N08NF2SATMA1 delivers the best balance of ultra-low R_DS(on), moderate Q_g, and compact D²PAK SMT packaging-making it optimal for space-constrained, high-efficiency 48–72 V power stages where thermal management relies on PCB copper.

Availability

IPB019N08NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, telecom PSUs, and EV onboard charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPB019N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to the StrongIRFET™ 2 family-designed specifically for high-current, high-efficiency power conversion in data center, industrial automation, and renewable energy systems where low R_DS(on) and robust avalanche capability are critical.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPB019N08NF2SATMA1 supports 128 A continuous drain current at case temperature of 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsink conditions and ensures reliable operation without exceeding the 175 °C maximum junction temperature.

Does this MOSFET require a negative gate turn-off voltage?

No. The device has a normal-level gate threshold (V_GS(th) = 2.2–3.8 V) and is fully compatible with 0 V to +10 V or +12 V gate drive. A negative turn-off voltage is not required or recommended; standard logic-level or gate-driver IC outputs suffice for clean switching.

Is the drain tab electrically isolated from the PCB mounting surface?

No. The drain tab (Pin 2) is directly connected to the internal drain structure and must be soldered to a PCB copper pour that is either floating or referenced to the drain potential. Electrical isolation requires insulating thermal pads or dielectric substrates-standard FR4 mounting makes the tab live at drain voltage.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode offers V_SD = 0.88 V at 100 A and t_rr = 44 ns-superior to most silicon diodes but higher forward drop than SiC Schottkys. It eliminates external diode count in synchronous rectifiers, though for ultra-low-loss 1 MHz+ designs, discrete SiC co-packaged solutions may yield marginal improvement.

IPB019N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 166A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.95mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 194µA

Gate Charge (Qg) (Max) @ Vgs:: 186 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8700 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB019N08NF2SATMA1 FAQ

1.How can I place an order for IPB019N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB019N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB019N08NF2SATMA1 reliable?

The price and inventory of IPB019N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB019N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB019N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB019N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB019N08NF2SATMA1?

IPB019N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB019N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB019N08NF2SATMA1?

For technical support, including IPB019N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB019N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPB019N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB019N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB019N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB019N08NF2SATMA1?

All IPB019N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB019N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB019N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB019N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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