Infineon Technologies IPB020NE7N3GATMA1

Overview

IPB020NE7N3GATMA1 from Infineon Technologies is a 75 V, 2.0 mΩ, N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies. It features low gate charge (Qg = 39 nC), fast switching (t_on = 11 ns), and qualified per AEC-Q101 for industrial reliability.

For engineers reviewing the IPB020NE7N3GATMA1 datasheet, IPB020NE7N3GATMA1 pinout, IPB020NE7N3GATMA1 application, or IPB020NE7N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, pulsed drain current rating (I_D,pulse = 320 A), thermal resistance (R_thJC = 0.45 K/W), and gate threshold voltage (V_GS(th) = 2.0–3.5 V).

Technical Context

This device is a trench-based silicon MOSFET designed for high-frequency, high-current switching in primary-side and secondary-side power stages. Its low R_DS(on) × Q_g figure of merit (0.078 Ω·nC) enables reduced conduction and switching losses in 48 V input DC-DC converters operating up to 1 MHz.

The integrated Schottky-like body diode exhibits low reverse recovery charge (Q_rr = 110 nC) and fast t_rr (45 ns), minimizing shoot-through risk in synchronous buck topologies. Thermal design is supported by a vertical copper clip construction and exposed drain pad for direct PCB heat sinking.

Key Specifications

Pinout & Package

IPB020NE7N3GATMA1 uses the PG-HSOF-8 (HSOF-8) surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. Pin 1–4 are source terminals; Pin 5–8 are drain terminals; Gate is connected to Pin 1 via internal bonding wire.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) power MOSFET applications.

Compared with IRFB4115PBF and STL220N7F7AG, IPB020NE7N3GATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, verified Q_rr, and automotive-grade reliability-making it the preferred choice for high-frequency, high-reliability 48 V power conversion where thermal and EMI constraints are critical.

Availability

IPB020NE7N3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PSUs requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPB020NE7N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications including IATF 16949.

This part belongs to Infineon's OptiMOS™ 7 family, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems operating at 48 V input.

FAQ

What is the maximum continuous drain current for IPB020NE7N3GATMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 70 A, based on thermal derating from the 120 A rating at 25 °C using R_thJC = 0.45 K/W and P_D limit. This value assumes proper PCB copper area (≥200 mm² 2 oz Cu with 6 thermal vias) and still-air conditions.

Does IPB020NE7N3GATMA1 support gate drive voltages below 10 V?

Yes - the device turns on fully at V_GS ≥ 4.5 V, with R_DS(on) increasing to 3.1 mΩ at 4.5 V. For optimal efficiency, 10 V drive is recommended; however, 5 V logic-level gate drivers (e.g., UCC27531) can be used with acceptable performance trade-offs in space-constrained designs.

Is the body diode suitable for synchronous rectification without external Schottky assist?

Yes - the integrated body diode is characterized with Q_rr = 110 nC and t_rr = 45 ns at I_F = 50 A, enabling reliable synchronous rectification in buck and LLC topologies without external diodes, provided dead time is set between 20–40 ns to avoid shoot-through.

What is the recommended PCB layout practice for thermal management?

Use a minimum 200 mm² exposed copper area (2 oz) under the package's drain pad, connected via ≥6 thermal vias (0.3 mm diameter, 0.6 mm pitch) to inner ground/power planes. Keep gate traces short and shielded; separate high-di/dt source return paths from signal grounds to minimize noise coupling.