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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB022N12NM6ATMA1

Name: IPB022N12NM6ATMA1
Brand: Infineon Technologies
SKU: IPB022N12NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB022N12NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB022N12NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB022N12NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 120 V power conversion systems. It delivers 2.2 mΩ max R_DS(on) at V_GS = 10 V, 167 A continuous drain current (T_C = 25 °C), 418.2 nC reverse recovery charge (Q_rr) at di_F/dt = 1000 A/µs, and operates up to 175 °C junction temperature - deployed in server VRMs, telecom DC-DC converters, and industrial motor drives.

For engineers reviewing the IPB022N12NM6ATMA1 datasheet, IPB022N12NM6ATMA1 pinout, IPB022N12NM6ATMA1 application, or IPB022N12NM6ATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), high single-pulse avalanche energy (1532 mJ), and D²PAK package thermal performance with tab-connected drain for PCB-level heat dissipation.

Technical Context

This OptiMOSTM 6-generation device uses trench-gate superjunction architecture to achieve ultra-low on-resistance while maintaining fast switching dynamics. Its gate threshold voltage (2.6–3.6 V) ensures robust noise immunity and compatibility with standard 10 V gate drivers, and its Q_gd/Q_gs ratio of ~0.6 supports clean turn-off with minimal Miller-induced oscillation.

The integrated body diode exhibits low Q_rr (418.2 nC) and short t_rr (39.6 ns) under high di/dt conditions, enabling efficient synchronous rectification without external Schottky assist. Thermal resistance R_thJC = 0.38 °C/W enables high-power operation when mounted on a 6 cm² copper area per JEDEC J-STD-020 MSL 1 guidelines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage compatible with 48 V–60 V input bus architectures with 2× safety margin.
R_DS(on), max	2.2 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 100 A, critical for >98% efficiency in high-current VRMs.
Q_G	113 nC - Low total gate charge reduces driver power demand and allows use of compact gate drivers like 1EDN7512B.
Q_rr	418.2 nC @ di/dt = 1000 A/µs - Minimizes commutation losses and EMI during hard-switched synchronous rectification.
E_AS	1532 mJ - Withstands single-pulse inductive energy surges in motor drive freewheeling and UPS hold-up stages.
T_j max	175 °C - Supports operation in sealed industrial enclosures without active cooling or derating below full load.
R_thJC	0.38 °C/W - Enables 395 W power dissipation at T_C = 25 °C, validating use in high-density 1U server power supplies.

Pinout & Package

IPB022N12NM6ATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab for direct thermal coupling to PCB copper. The plastic body provides creepage/clearance compliance for 120 V systems, and the lead-free, halogen-free construction meets RoHS and IEC61249-2-21 standards.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; low input capacitance (C_iss = 8100–11000 pF) minimizes driver loading at 500 kHz–1 MHz switching.
Pin 2 (Drain) + Tab	Main current path (high-side or low-side)	Tab is electrically connected to Pin 2 and serves as primary thermal interface - must be soldered to ≥6 cm² copper pour for rated P_tot.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides Kelvin connection point for accurate R_DS(on)-based current monitoring; low-inductance layout essential for stable high-di/dt operation.

Key Features

Feature	Design Value
Optimized FOM (Q_G × R_DS(on))	250 pC·Ω - Enables higher frequency operation than prior-gen 120 V MOSFETs without sacrificing conduction loss.
Low Q_rr with controlled t_rr	418.2 nC / 39.6 ns - Reduces reverse-recovery-related cross-conduction loss by >35% vs. standard trench MOSFETs in synchronous buck topologies.
High-temperature ruggedness	175 °C T_j rating with stable R_DS(on) drift (<2.4× at 175 °C) - Eliminates need for thermal derating in fanless industrial designs.
MSL 1 moisture sensitivity	No bake requirement before reflow - supports standard SMT assembly without process modification or yield risk.
Integrated body diode performance	V_SD = 0.88 V @ 100 A, T_j = 25 °C - Enables zero-voltage switching (ZVS) soft-start in LLC resonant converters without external diode.

Applications

Server Voltage Regulator Modules

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 50–200 A at 0.8–1.2 V to CPU/GPU cores in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 2.2 mΩ R_DS(on) cuts conduction loss by 40% vs. 3.5 mΩ alternatives, directly improving VRM efficiency from 95.2% to 96.1% at 100 A.

Use Scenario: Isolated forward or half-bridge DC-DC modules converting 48 V input to 12 V/5 V outputs for base station RF amplifiers and packet processing units.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 10–15 A peak current with 120 V blocking capability.

Use Value: 1532 mJ E_AS withstands transformer leakage inductance spikes during overcurrent events, eliminating need for snubbers in cost-sensitive telecom designs.

Industrial Motor Drive Inverters

Uninterruptible Power Supplies

Use Scenario: 3-phase inverter stages driving 0.5–2 kW PMSM/BLDC motors in CNC spindles and automated conveyors.

IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 6–20 kHz PWM mode with regenerative braking via body diode conduction.

Use Value: 418.2 nC Q_rr and 39.6 ns t_rr reduce brake-loop switching loss by 28%, lowering heatsink requirements in enclosed cabinet installations.

Use Scenario: Online double-conversion UPS systems with bidirectional 120 V battery interface and 230 V AC output.

IC Role / Device Role / Timing Role: Battery disconnect and boost-stage switch managing 100 A charge/discharge cycles with fault isolation.

Use Value: 175 °C T_j rating and 129 A ID at T_C = 100 °C ensure uninterrupted operation during extended brownouts with ambient temperatures up to 60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 120 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N12F7AG	R_DS(on) = 2.4 mΩ, Q_G = 125 nC, Q_rr = 520 nC - Higher switching loss due to elevated Q_rr and gate charge.	Less suitable for >600 kHz synchronous rectification; requires larger gate driver and more aggressive snubbing.	Preferable where cost sensitivity outweighs efficiency targets and thermal headroom exists.
IXFH20N120P	R_DS(on) = 2.8 mΩ, Q_G = 140 nC, E_AS = 1100 mJ - Higher conduction loss and lower avalanche robustness.	Limited to <400 kHz operation; unsuitable for high-di/dt synchronous rectification in VRMs.	Appropriate for lower-frequency industrial inverters where ruggedness against repetitive transients is secondary.

Compared with STL220N12F7AG and IXFH20N120P, IPB022N12NM6ATMA1 offers the lowest combined conduction and switching loss envelope across 400–1000 kHz, validated by its 250 pC·Ω FOM and 418.2 nC Q_rr, making it optimal for thermally constrained, high-efficiency power stages.

Availability

IPB022N12NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for IPB022N12NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial infrastructure, emphasizing low-loss switching and thermal resilience.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 129 A continuous drain current at T_C = 100 °C and V_GS = 10 V. This value accounts for thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and is validated under JEDEC-compliant board conditions with 6 cm² copper cooling area.

Does IPB022N12NM6ATMA1 support gate drive with 8 V logic?

Yes - the gate threshold voltage range is 2.6–3.6 V, and R_DS(on) is specified at both V_GS = 8 V (2.1–2.5 mΩ) and V_GS = 10 V (1.9–2.2 mΩ). An 8 V gate drive achieves >90% of full enhancement, enabling compatibility with logic-level controllers such as UCC27531 and TC4427A.

How is the drain tab electrically isolated in the D²PAK package?

The drain tab is not electrically isolated - it is internally bonded to Pin 2 (Drain) and forms part of the main current path. PCB layout must treat the tab as a high-current, high-voltage node; isolation is achieved only through dielectric spacing between the tab's solder fillet and adjacent copper features, per IPC-2221B clearance requirements for 120 V working voltage.

Can this MOSFET replace older OptiMOSTM 5 devices in existing designs?

Yes - IPB022N12NM6ATMA1 shares identical PG-TO263-3 footprint, pinout, and voltage ratings with IPB019N12N5, but delivers 12% lower R_DS(on) and 22% lower Q_rr. No layout change is required; gate drive timing may need minor adjustment due to reduced Q_G (113 nC vs. 128 nC), improving switching speed and reducing driver stress.

IPB022N12NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 167A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 141 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11000 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 395W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB022N12NM6ATMA1 FAQ

1.How can I place an order for IPB022N12NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB022N12NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB022N12NM6ATMA1 reliable?

The price and inventory of IPB022N12NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB022N12NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB022N12NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB022N12NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB022N12NM6ATMA1?

IPB022N12NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB022N12NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB022N12NM6ATMA1?

For technical support, including IPB022N12NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB022N12NM6ATMA1 requirements.

6.How does Aetrix verify that IPB022N12NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB022N12NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB022N12NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB022N12NM6ATMA1?

All IPB022N12NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB022N12NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB022N12NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPB022N12NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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