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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB024N08N5ATMA1

Name: IPB024N08N5ATMA1
Brand: Infineon Technologies
SKU: IPB024N08N5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB024N08N5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB024N08N5ATMA1.pdf

Description:: MOSFET N-CH 80V 120A D2PAK

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Product details

Overview

IPB024N08N5ATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, rated for 80 V V_DS, 2.4 mΩ R_DS(on) max at V_GS = 10 V, and 166 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPB024N08N5ATMA1 datasheet, IPB024N08N5ATMA1 pinout, IPB024N08N5ATMA1 application, or IPB024N08N5ATMA1 equivalent, key selection criteria include its 99 nC total gate charge, 116 nC output charge, 0.5 K/W junction-to-case thermal resistance, avalanche ruggedness (374 mJ), and JEDEC-qualified reliability for automotive and industrial use.

Technical Context

This OptiMOS™ 5 device employs trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM), enabling high-frequency switching up to 1 MHz in hard-switched topologies. Its gate threshold voltage (2.2–3.8 V) supports standard 5 V or 10 V logic-level drive without level-shifting.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 187–374 nC) and fast trr (84–168 ns), making it suitable for synchronous rectification in buck, boost, and LLC resonant converters where diode conduction loss and EMI must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input systems with 20 % margin and transient overvoltage tolerance
R_DS(on), max	2.4 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 70 A DC, critical for high-current POL converters
I_D, cont	166 A at T_C = 25 °C - Supports high-power motor control inverters and server VRMs with minimal paralleling
Q_G	99 nC - Low gate drive energy reduces driver IC stress and enables efficient 500 kHz–1 MHz operation
E_AS	374 mJ - Single-pulse avalanche rating ensures robustness against inductive switching transients in motor drives
R_thJC	0.5 K/W - Enables >200 W power dissipation with modest heatsinking, simplifying thermal design in compact enclosures
V_SD	0.92 V at I_F = 100 A - Low forward drop of integrated body diode improves light-load efficiency in sync-FET applications

Pinout & Package

IPB024N08N5ATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain tab for enhanced thermal performance. The drain is connected to the metal tab (Pin 2 and tab), gate to Pin 1, and source to Pin 3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring <100 nC charge; routed away from high-dV/dt nodes to prevent false turn-on
Pin 2 + Tab	Drain	Main high-side power path; tab must be soldered to PCB copper pour ≥6 cm² for R_thJA ≤40 K/W
Pin 3	Source	Reference node for gate drive; tied to power ground plane with low-inductance layout to minimize ringing

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Reduces R_DS(on) × Q_G FOM by 35 % vs. prior generation, directly lowering combined conduction and switching losses
100 % avalanche tested	Guarantees single-pulse ruggedness up to 374 mJ without derating, eliminating need for external snubbers in flyback designs
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and J-STD-020 MSL1 reflow requirements, supporting lead-free manufacturing and environmental compliance
Low Q_oss (116 nC)	Minimizes capacitive turn-off loss in high-frequency ZVS/ZCS circuits, improving efficiency above 300 kHz

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-current point-of-load regulation in AI accelerator servers delivering >300 A at 0.8 V.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, operating at 600–800 kHz with precise gate timing.

Use Value: 2.4 mΩ R_DS(on) cuts conduction loss by 40 % vs. 4 mΩ alternatives, reducing thermal load on 12-layer PCBs.

Use Scenario: Inverter leg switch in 5–10 kW servo drives with regenerative braking.

IC Role / Device Role / Timing Role: High-side power switch handling 166 A peak current and 80 V bus with fast 14 ns rise time.

Use Value: 0.5 K/W R_thJC allows direct mounting to aluminum heatsink, eliminating thermal interface material in compact enclosures.

Telecom PSU

EV Onboard Charger

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with 53 V nominal input and 400 V output.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology, driven at 100–200 kHz.

Use Value: 99 nC Q_G enables low-loss gate driving with 2 A peak drivers, reducing driver die area and cost.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC LLC resonant converter.

IC Role / Device Role / Timing Role: Low-V_DS FET conducting 100 A during zero-voltage switching intervals.

Use Value: 0.92 V V_SD and 187 nC Q_rr cut diode conduction loss by 30 % and reduce EMI vs. discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 2.2 mΩ (lower), Q_G = 112 nC (higher), same D²PAK package	Higher gate drive loss limits practical switching frequency to ≤500 kHz in high-current apps	Prefer when lowest R_DS(on) dominates over switching loss; verify gate driver capability for 112 nC load
IXFH32N80X	R_DS(on) = 250 mΩ (much higher), TO-247 package, 800 V rating	Designed for 400 V+ PFC stages-not suitable for 48 V/80 V sync rectification or low-voltage switching	Only consider for legacy 800 V hard-switched designs; not a functional substitute for IPB024N08N5ATMA1's low-voltage, high-current role

Compared with STL220N8F7AG and IXFH32N80X, IPB024N08N5ATMA1 delivers optimal balance of ultra-low R_DS(on), moderate Q_G, and proven 80 V system compatibility-making it the preferred choice for high-efficiency, high-frequency 48 V industrial and computing power stages.

Availability

IPB024N08N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term production support.

Supply support for IPB024N08N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-density power conversion in datacenter, industrial, and e-mobility applications where low R_DS(on) and fast switching are critical.

FAQ

Is IPB024N08N5ATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes. Its 0.92 V body diode forward voltage at 100 A and low Q_rr (187–374 nC) enable efficient synchronous rectification in secondary-side LLC designs operating at 100–500 kHz. The fast trr (84–168 ns) minimizes reverse recovery loss and associated EMI, and the 2.4 mΩ R_DS(on) ensures low conduction loss under high DC bias.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies that a 6 cm² (e.g., 40 mm × 40 mm) single-layer 70 µm copper area connected to the drain tab achieves R_thJA = 40 K/W in vertical still-air conditions. Larger copper areas yield diminishing returns; thermal simulation is advised for forced-air or sealed environments where R_thJA may exceed 62 K/W.

Does IPB024N08N5ATMA1 require gate resistors for stability?

Yes. A series gate resistor (typically 1.6 Ω, per datasheet switching test condition) is required to dampen gate-source ringing and control dV/dt-induced shoot-through in half-bridge configurations. Layout inductance and driver strength must be co-optimized: values below 1 Ω risk oscillation, while >5 Ω increases switching loss unnecessarily.

Can this MOSFET replace older OptiMOS™ 3 or 4 devices in existing designs?

Yes, with validation. IPB024N08N5ATMA1 shares identical D²PAK-3 pinout and voltage rating with predecessors like IPB034N08N5, but offers 20 % lower R_DS(on) and improved Q_G/R_DS(on) ratio. Thermal and gate drive margins should be rechecked, especially in thermally constrained layouts, due to higher power density.

IPB024N08N5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 154µA

Gate Charge (Qg) (Max) @ Vgs:: 123 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8970 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB024N08N5ATMA1 FAQ

1.How can I place an order for IPB024N08N5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB024N08N5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB024N08N5ATMA1 reliable?

The price and inventory of IPB024N08N5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB024N08N5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB024N08N5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB024N08N5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB024N08N5ATMA1?

IPB024N08N5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB024N08N5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB024N08N5ATMA1?

For technical support, including IPB024N08N5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB024N08N5ATMA1 requirements.

6.How does Aetrix verify that IPB024N08N5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB024N08N5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB024N08N5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB024N08N5ATMA1?

All IPB024N08N5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB024N08N5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB024N08N5ATMA1 part is unused and in its original packaging.

Return procedure for IPB024N08N5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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