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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB024N08NF2SATMA1

Name: IPB024N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPB024N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB024N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB024N08NF2SATMA1.pdf

Description:: TRENCH 40<-<100V PG-TO263-3

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Product details

Overview

IPB024N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, designed for high-efficiency DC-DC conversion and motor drive switching. It delivers 80 V V_DS, 2.4 mΩ R_DS(on) max at V_GS = 10 V, 161 A continuous drain current, and 105 nC Q_oss, enabling low conduction and switching losses in synchronous buck converters.

For engineers reviewing the IPB024N08NF2SATMA1 datasheet, IPB024N08NF2SATMA1 pinout, IPB024N08NF2SATMA1 application, or IPB024N08NF2SATMA1 equivalent, key selection criteria include its 1.0 °C/W R_thJC, 100% avalanche-tested ruggedness, gate plateau voltage of 4.7 V, and optimized gate charge profile for high-frequency PWM control in industrial power supplies and on-board chargers.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching with 19 ns turn-on delay and 42 ns turn-off delay under 100 A/40 V conditions. Its integrated body diode features 39 ns reverse recovery time and 242 nC Q_rr, supporting hard-switched and synchronous rectification topologies.

The MOSFET operates across –55 °C to +175 °C junction temperature range and is qualified per JEDEC standards. Thermal resistance values (R_thJC = 1.0 °C/W, R_thJA = 40 °C/W on 6 cm² copper) reflect its suitability for thermally constrained PCB layouts requiring high power density without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus systems and automotive 60 V transients
R_DS(on), max	2.4 mΩ at V_GS = 10 V - Enables ≤2.4 W conduction loss at 100 A, critical for <1% efficiency loss in high-current outputs
I_D, cont	161 A at T_C = 25 °C - Supports high-current phases in server VRMs and EV traction inverters
Q_g	89 nC - Low total gate charge reduces driver power and enables >500 kHz operation with standard gate drivers
E_AS	119 mJ - Confirmed single-pulse avalanche energy ensures robustness during inductive load switching
R_thJC	1.0 °C/W - Direct thermal path from die to case allows efficient heatsink coupling in compact power modules
V_GS(th)	2.2–3.8 V - Threshold range supports reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

IPB024N08NF2SATMA1 is housed in a surface-mount D²PAK (PG-TO263-3) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and RoHS-compliant, halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; low 1.8 Ω gate resistance minimizes ringing and simplifies driver design
Pin 2 / Tab (Drain)	Main power output node	Exposed metal tab serves as primary drain connection and thermal interface-must be soldered to large copper pour
Pin 3 (Source)	Reference return path	Completes power loop; low-inductance source routing essential for minimizing switching voltage spikes

Key Features

Feature	Design Value
StrongIRFET™ 2 trench-gate architecture	Delivers 2.4 mΩ R_DS(on) in D²PAK without compromising dv/dt immunity or short-circuit ruggedness
100% avalanche tested	Guarantees minimum 119 mJ single-pulse E_AS, eliminating need for external snubbers in inductive switching
Optimized gate charge profile	Q_gd/Q_g ratio of ~21% enables clean Miller plateau transition and predictable turn-off timing
Enhanced body diode performance	39 ns t_rr and 242 nC Q_rr reduce reverse recovery losses in synchronous rectification and LLC resonant converters

Applications

Server Voltage Regulator Modules (VRMs)

Industrial Motor Drives

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 600 A).

IC Role / Device Role / Timing Role: High-side synchronous FET in 300–1000 kHz phase-legs, handling peak currents ≥161 A with minimal R_DS(on) loss.

Use Value: 2.4 mΩ R_DS(on) limits conduction loss to <2.5 W at 100 A, directly improving VRM efficiency and reducing heatsink requirements.

Use Scenario: Inverter leg switch in 3 kW–10 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Main switching element in 6–20 kHz PWM inverter stages, operating at T_j up to 150 °C.

Use Value: 1.0 °C/W R_thJC and 175 °C max T_j enable stable operation under sustained overload without derating.

On-Board Chargers (OBCs)

48 V Mild Hybrid Systems

Use Scenario: Primary switch in bi-directional CLLC resonant converter for AC/DC and DC/DC conversion in EV OBCs.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in high-frequency (>200 kHz), zero-voltage-switching (ZVS) topology.

Use Value: 105 nC Q_oss and 45 pF Crss support reliable ZVS across wide load range, reducing switching loss by ≥30% vs. legacy MOSFETs.

Use Scenario: 48 V–12 V DC/DC converter in 48 V mild hybrid architectures for engine start-stop and regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck regulator delivering up to 150 A to 12 V subsystems.

Use Value: Avalanche rating and 80 V V_DS withstand 120 V load-dump transients per ISO 7637-2, eliminating need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 2.2 mΩ (V_GS = 10 V); Q_g = 92 nC; TO-263-3 package	Slightly lower R_DS(on) but higher Q_g; marginally slower switching (t_d(off) = 48 ns)	Preferable where conduction loss dominates; verify gate driver capability for higher Q_g.
IXFH80N10P3	R_DS(on) = 10.5 mΩ (V_GS = 10 V); TO-247-3 package; no Q_oss spec	Higher R_DS(on) and larger footprint; lacks avalanche rating and Q_oss data	Only suitable for lower-current (<50 A), lower-frequency (<100 kHz) applications with ample thermal margin.

Compared with STL220N8F7AG and IXFH80N10P3, IPB024N08NF2SATMA1 offers superior balance of ultra-low R_DS(on), low Q_g, documented Q_oss, and guaranteed avalanche ruggedness-making it optimal for high-frequency, high-current, thermally constrained designs where reliability and efficiency are co-prioritized.

Availability

IPB024N08NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, on-board chargers, and 48 V mild hybrid systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB024N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to the StrongIRFET™ 2 family, engineered specifically for high-efficiency, high-power-density switching in data center, industrial, and automotive electrification applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum recommended gate-source voltage for IPB024N08NF2SATMA1?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for operation between 4.5 V and 15 V. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk. For reliable long-term operation, 10 V is the recommended nominal gate drive voltage per datasheet test conditions.

Does IPB024N08NF2SATMA1 have a specified short-circuit withstand time?

No short-circuit withstand time is specified in the official datasheet. While the device is 100% avalanche tested and rated for E_AS = 119 mJ, Infineon does not publish validated short-circuit ruggedness data (e.g., t_sc) for this part. System-level protection (current limiting, desat detection) must be implemented externally in applications subject to fault conditions.

Can IPB024N08NF2SATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (verified in Diagram 9) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥5 Ω), and thermal coupling via shared heatsink are required to maintain balanced operation and avoid thermal runaway at full load.

Is the drain tab electrically isolated from the package leads?

No-the drain tab (Pin 2) is internally connected to the drain terminal and is not electrically isolated from the lead frame. It must be treated as a live high-voltage node and thermally bonded to the PCB copper pour or heatsink using conductive thermal interface material or solder. Electrical isolation requires external insulation (e.g., silicone pad) if mounted to a grounded heatsink.

IPB024N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 107A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 133 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB024N08NF2SATMA1 FAQ

1.How can I place an order for IPB024N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB024N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB024N08NF2SATMA1 reliable?

The price and inventory of IPB024N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB024N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB024N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB024N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB024N08NF2SATMA1?

IPB024N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB024N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB024N08NF2SATMA1?

For technical support, including IPB024N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB024N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPB024N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB024N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB024N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB024N08NF2SATMA1?

All IPB024N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB024N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB024N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB024N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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