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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB026N06NATMA1

Name: IPB026N06NATMA1
Brand: Infineon Technologies
SKU: IPB026N06NATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB026N06NATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB026N06NATMA1.pdf

Description:: MOSFET N-CH 60V 25A/100A D2PAK

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Product details

Overview

IPB026N06NATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for synchronous rectification in high-efficiency DC-DC converters, featuring 60 V V_DS, 2.6 mΩ R_DS(on) max at 10 V V_GS, 100 A continuous drain current at T_C = 25 °C, 100% avalanche tested, and PG-TO263-3 package with bottom-side thermal pad. It operates in server VRMs, telecom power supplies, and industrial SMPS where low conduction loss and robust unclamped inductive switching are critical.

For engineers reviewing the IPB026N06NATMA1 datasheet, IPB026N06NATMA1 pinout, IPB026N06NATMA1 application, or IPB026N06NATMA1 equivalent, key selection criteria include R_DS(on) at 6 V gate drive, Q_g (56 nC), Q_oss (65 nC), thermal resistance R_thJC (1.1 K/W), and avalanche energy E_AS (110 mJ) under synchronous FET operating conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ trench technology to minimize R_DS(on) × Q_g figure-of-merit for high-frequency synchronous rectification. Its gate threshold voltage (2.1–3.3 V) ensures reliable turn-on with standard 5–6 V controller outputs while maintaining noise immunity.

The device integrates a fast, low-Q_rr (73 nC) body diode with t_rr of 55–88 ns and V_SD ≤ 1.2 V at 100 A, enabling efficient reverse recovery in hard-switched and resonant topologies without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V input bus systems with 20 % derating margin
R_DS(on) max	2.6 mΩ @ V_GS = 10 V - enables <1.3 W conduction loss at 100 A
I_D cont.	100 A @ T_C = 25 °C - rated for high-current output stages with forced-air cooling
Q_g	56 nC - determines gate drive power and switching speed in 300–1000 kHz converters
E_AS	110 mJ - withstands single-pulse inductive energy in VRM phase-leg fault conditions
R_thJC	1.1 K/W - enables >100 W power dissipation with moderate heatsink on PCB copper area
Q_oss	65 nC - directly impacts turn-off loss and voltage overshoot during hard switching

Pinout & Package

IPB026N06NATMA1 uses the PG-TO263-3 (D²PAK) package with exposed drain pad on the bottom side for enhanced thermal performance. The package complies with JEDEC MO-211 and features solderable terminals for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to power ground plane with minimal inductance
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <20 nC charge for full enhancement
Pin 3 (Drain)	Power output / Drain	Exposed copper pad on bottom; primary thermal path and high-current return path

Key Features

Feature	Design Value
Synchronous rectification optimization	Low Q_g/R_DS(on) ratio (21.5 nC/mΩ) minimizes combined conduction + switching loss
100 % avalanche tested	Each unit validated for 110 mJ single-pulse E_AS, ensuring reliability in inductive fault events
Superior thermal resistance	R_thJC = 1.1 K/W enables >120 W operation with 20 °C temperature rise above case
JEDEC-qualified reliability	Qualified per J-STD-20 (reflow) and JESD22 (HTOL, TC, HAST) for industrial and telecom use
Halogen-free & RoHS	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing compliance

Applications

Server Voltage Regulator Modules

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-density 3.3 V/50 A output stage in multi-phase buck VRMs for AI accelerators.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diodes to reduce conduction loss by >40 %.

Use Value: Enables >95 % efficiency at 50 A load with 2.6 mΩ R_DS(on) and 56 nC Q_g supporting 1 MHz switching.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V-to-12 V LLC resonant converters.

IC Role / Device Role / Timing Role: Low-V_DS clamp FET conducting during transformer secondary half-cycle.

Use Value: Body diode t_rr ≤ 88 ns and Q_rr = 73 nC prevent cross-conduction loss and enable ZVS-assisted turn-on.

Industrial Motor Drive Power Stages

EV On-Board Charger Auxiliary Supplies

Use Scenario: High-current auxiliary 24 V supply in servo drive inverters using discrete half-bridge topology.

IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck converter powering gate drivers and sensors.

Use Value: 100 A rating and 1.1 K/W R_thJC sustain 100 % duty cycle operation with 60 °C case temperature rise.

Use Scenario: Synchronous rectifier in 300–500 kHz flyback or forward converter supplying 12 V control logic in OBC systems.

IC Role / Device Role / Timing Role: Primary-side referenced FET with source tied to primary ground, driven via gate transformer.

Use Value: 60 V V_DS provides margin over reflected 40 V peak, while 2.6 mΩ R_DS(on) reduces heat sink requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 82 nC; TO-220 package; R_thJC = 1.5 K/W	Higher conduction loss and slower switching; less suitable for >500 kHz sync rectification	Prefer when cost sensitivity outweighs efficiency and thermal constraints
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 68 nC; PowerFLAT 8x8 package; no exposed drain pad	Lower R_DS(on) but higher Q_g and inferior thermal path limits sustained 100 A operation	Prefer for space-constrained layouts where board-level thermal management is limited

Compared with IRF1407PBF and STL220N6F7, IPB026N06NATMA1 delivers optimal balance of ultra-low R_DS(on), moderate Q_g, and industry-leading R_thJC, making it the preferred choice for thermally demanding, high-frequency synchronous rectifier designs requiring long-term reliability.

Availability

IPB026N06NATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor drive auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for IPB026N06NATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency synchronous rectification in high-current, high-frequency DC-DC conversion applications.

FAQ

What is the maximum recommended gate drive voltage for IPB026N06NATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operation at 12 V is permissible for improved R_DS(on) margin, though gate oxide stress increases above 10 V. Gate drive circuits must limit dV/dt and include clamping to avoid exceeding V_GS = ±20 V during transients.

Does IPB026N06NATMA1 require a gate resistor for stability in synchronous rectifier applications?

Yes - a series gate resistor (typically 2–5 Ω) is required to dampen gate ringing caused by parasitic L_g–C_iss resonance and prevent spurious turn-on due to Miller-induced dv/dt coupling. Layout-dependent parasitics necessitate empirical tuning; values below 2 Ω risk oscillation, while >10 Ω excessively slows switching and increases losses.

Can IPB026N06NATMA1 be used in linear mode (as a pass transistor)?

No - this device is not rated or characterized for linear (saturation) operation. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 10 A at V_DS > 10 V. Continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at elevated V_DS.

How does the body diode performance compare to external Schottky diodes in high-frequency operation?

The integrated body diode has t_rr = 55–88 ns and Q_rr = 73 nC, outperforming most 100 A Schottky diodes (t_rr ~100–200 ns, Q_rr >100 nC) in soft-recovery behavior. At >300 kHz, its lower Q_rr reduces reverse recovery loss and EMI, eliminating need for parallel Schottky in most synchronous rectifier implementations.

IPB026N06NATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 75µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB026N06NATMA1 FAQ

1.How can I place an order for IPB026N06NATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB026N06NATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB026N06NATMA1 reliable?

The price and inventory of IPB026N06NATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB026N06NATMA1 is usually 5 days.

3.What payment methods are accepted for IPB026N06NATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB026N06NATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB026N06NATMA1?

IPB026N06NATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB026N06NATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB026N06NATMA1?

For technical support, including IPB026N06NATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB026N06NATMA1 requirements.

6.How does Aetrix verify that IPB026N06NATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB026N06NATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB026N06NATMA1 meets industry standards.

7.What is the process for return or replacement of IPB026N06NATMA1?

All IPB026N06NATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB026N06NATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB026N06NATMA1 part is unused and in its original packaging.

Return procedure for IPB026N06NATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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