Infineon Technologies IPB026N10NF2SATMA1

Overview

IPB026N10NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, rated for 100 V V_DS, 2.65 mΩ R_DS(on) max at V_GS = 10 V, and 162 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, low Q_g (103 nC), and optimized gate charge profile for high-efficiency synchronous rectification in DC-DC converters.

For engineers reviewing the IPB026N10NF2SATMA1 datasheet, IPB026N10NF2SATMA1 pinout, IPB026N10NF2SATMA1 application, or IPB026N10NF2SATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_oss/Q_g ratio for hard-switching efficiency, thermal resistance (R_thJC = 0.6 °C/W), and integrated body diode recovery performance (t_rr = 44 ns, Q_rr = 327 nC).

Technical Context

This StrongIRFET™ 2 device employs trench-gate superjunction technology to achieve ultra-low conduction loss while maintaining fast switching dynamics. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 10 V gate drive, and its plateau voltage (V_plateau = 4.6 V) enables predictable Miller region control during turn-on/turn-off transitions.

The MOSFET integrates a robust intrinsic body diode with low forward voltage (V_SD = 0.89 V typ. at I_F = 100 A, T_j = 25 °C) and tightly controlled reverse recovery (t_rr = 44 ns, Q_rr = 327 nC), making it suitable for synchronous buck topologies where diode conduction and commutation losses dominate system efficiency.

Key Specifications

Pinout & Package

IPB026N10NF2SATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The drain is connected to the large copper tab on the underside; gate and source are on gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STL220N10F7 and IXFH160N10P, IPB026N10NF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and surface-mount D²PAK form factor-making it ideal for space-constrained, high-current, high-frequency POL converters where thermal performance and layout density are co-critical.

Availability

IPB026N10NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB026N10NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and qualification infrastructure.

This part belongs to the StrongIRFET™ 2 family, engineered specifically for high-current, high-frequency power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet Table 2. For long-term reliability, gate drive should be limited to 10–12 V for enhancement and −5 V for active turn-off. Exceeding 15 V risks oxide degradation over time, especially at elevated junction temperatures (>125 °C), and may accelerate parametric drift in R_DS(on).

Does this MOSFET require external gate resistors for typical 500 kHz buck converter operation?

Yes - a 1.6 Ω external gate resistor is used in the datasheet's switching time test conditions (Table 5). This value balances turn-on speed against ringing and EMI. For 500 kHz operation, a 2.2–3.3 Ω resistor is recommended to dampen gate oscillation while keeping td(on) ≤ 25 ns and tr ≤ 75 ns, preserving efficiency without compromising stability.

How does the body diode performance compare to discrete Schottky alternatives in synchronous rectification?

Its V_SD = 0.89 V at 100 A is higher than a 0.45 V Schottky, but its Q_rr = 327 nC and t_rr = 44 ns are significantly lower than most silicon diodes. In hard-switched synchronous FET mode, this results in lower total recovery loss than Schottky diodes above ~100 kHz due to absence of reverse leakage and soft recovery characteristics.

Is the drain tab electrically isolated from the PCB copper pour in standard D²PAK mounting?

No - the drain tab is metallurgically bonded to the die's drain region and must be soldered directly to a dedicated, non-isolated copper pour serving as both thermal sink and high-current return path. Electrical isolation requires insulated thermal pads or ceramic substrates, which increase R_thJC by ≥0.3 °C/W and are not qualified for this part's JEDEC-released thermal specs.