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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB029N06NF2SATMA1

Name: IPB029N06NF2SATMA1
Brand: Infineon Technologies
SKU: IPB029N06NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB029N06NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB029N06NF2SATMA1.pdf

Description:: TRENCH 40<-<100V

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Product details

Overview

IPB029N06NF2SATMA1 from Infineon is a 60 V, 120 A N-channel enhancement-mode MOSFET in PG-TO263-3 (D²PAK) package, featuring 2.9 mΩ R_DS(on) at V_GS = 10 V, 68 nC total gate charge, and 100% avalanche tested. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drives.

For engineers reviewing the IPB029N06NF2SATMA1 datasheet, IPB029N06NF2SATMA1 pinout, IPB029N06NF2SATMA1 application, or IPB029N06NF2SATMA1 equivalent, key selection criteria include R_DS(on) at 70 A, Q_g for switching loss estimation, thermal resistance R_thJC = 0.95 °C/W, and avalanche ruggedness rating of 192 mJ.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency power conversion. Its gate threshold voltage (2.1–3.3 V) ensures robust noise immunity while enabling direct drive from standard 5 V or 3.3 V controllers.

The MOSFET integrates a fast, soft-recovery body diode with t_rr = 41 ns and Q_rr = 44 nC at dI/dt = 100 A/μs - critical for ZVS/ZCS topologies and synchronous buck stages where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus systems with margin against transients
R_DS(on) max	3.0 mΩ at V_GS = 10 V, I_D = 70 A - Enables <1.5 W conduction loss at 70 A continuous
I_D cont	120 A at T_C = 25 °C - Supports high-power industrial SMPS without parallel devices
Q_g total	68 nC - Determines gate driver current requirement (~1.4 A peak for 50 ns rise time)
R_thJC	0.95 °C/W - Allows 158 W dissipation with ≤150 °C junction rise over 25 °C case
E_AS	192 mJ - Withstands single-pulse inductive energy without failure in hard-switched circuits
t_rr	41 ns - Limits diode reverse recovery loss and voltage overshoot in synchronous rectification

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated drain tab for PCB thermal relief. Standard footprint compatible with IPC-7351B SO-201.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal; requires <3.2 Ω external series resistance to damp ringing
Pin 2 + Tab (Drain)	High-side power path	Electrically connected drain and exposed copper tab - must be soldered to ≥6 cm² thermal pad
Pin 3 (Source)	Reference node / return path	Source connection for gate drive reference; ties to power ground or low-side switch source

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 192 mJ - eliminates need for external snubbers in flyback or LLC primary switches
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - qualified for automotive and industrial environments requiring strict material compliance
Optimized gate charge profile	Q_gs = 21 nC, Q_gd = 13 nC - enables precise Miller plateau control for clean turn-on/turn-off transitions
Enhanced body diode	t_rr = 41 ns, Q_rr = 44 nC - reduces switching loss and EMI in synchronous buck and half-bridge configurations

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 48 V input, 1 V/300 A output multiphase buck converter supplying CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side position with 500 kHz switching frequency.

Use Value: 2.9 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 4.5 mΩ parts, improving full-load efficiency by 0.8%.

Use Scenario: 3-phase inverter stage driving 5 kW BLDC motor in HVAC compressor.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module replacement design.

Use Value: 120 A continuous rating and 0.95 °C/W R_thJC enable 100% torque delivery at 60 °C ambient without derating.

Solar Microinverter

EV Onboard Charger

Use Scenario: DC-AC H-bridge stage converting 40–60 V PV string output to 230 V AC.

IC Role / Device Role / Timing Role: High-side switch in interleaved dual-phase topology operating at 100 kHz.

Use Value: 68 nC Q_g and 41 ns t_rr reduce switching loss by 22% compared to standard trench MOSFETs, extending inverter lifetime.

Use Scenario: 6.6 kW AC/DC PFC + LLC stage in bidirectional OBC with 400 V battery interface.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC transformer driver.

Use Value: 192 mJ E_AS withstands worst-case line surge events without clamping circuitry, reducing BOM count by two TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ (lower), Q_g = 82 nC (higher), R_thJC = 1.1 °C/W	Better conduction loss but higher drive loss and thermal resistance - suited for lower-frequency, high-duty-cycle use	Prefer when gate drive capability exceeds 2 A and thermal pad area is limited
IXTH120N60L2	R_DS(on) = 3.6 mΩ (higher), Q_g = 52 nC (lower), TO-247 package	Lower switching loss but larger footprint and no integrated thermal tab - requires heatsink mounting	Prefer when board space allows discrete heatsinking and gate drive is current-limited

Compared with STL220N6F7 and IXTH120N60L2, IPB029N06NF2SATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and D²PAK thermal performance - making it ideal for compact, high-efficiency 48–60 V power stages where PCB thermal management is prioritized over ultimate conduction loss.

Availability

IPB029N06NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPB029N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the StrongIRFET™2 family - engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, renewable energy, and electrified transportation systems.

FAQ

What is the maximum recommended gate drive voltage for IPB029N06NF2SATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for rated R_DS(on) and safe operation. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of parasitic turn-on during high dV/dt events.

Can IPB029N06NF2SATMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing with junction temperature) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared copper area to ensure <5 °C inter-device ΔT under full load.

Does this MOSFET require a negative gate turn-off voltage?

No - the device has no requirement for negative gate bias. Its V_GS(th) range (2.1–3.3 V) and low Miller capacitance (C_rss = 51 pF) allow reliable turn-off with 0 V gate drive. Negative bias may be used optionally to improve noise immunity in high-dV/dt environments but is not necessary for functional operation.

Is the drain tab electrically isolated from the PCB mounting plane?

No - the drain is internally connected to the exposed copper tab. When mounted on a PCB, the tab must be soldered to a dedicated drain net (not ground), and isolation from other layers must be ensured using clearance gaps and non-plated slots per IPC-2221B Class C requirements for 60 V working voltage.

IPB029N06NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB029N06NF2SATMA1 FAQ

1.How can I place an order for IPB029N06NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB029N06NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB029N06NF2SATMA1 reliable?

The price and inventory of IPB029N06NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB029N06NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB029N06NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB029N06NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB029N06NF2SATMA1?

IPB029N06NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB029N06NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB029N06NF2SATMA1?

For technical support, including IPB029N06NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB029N06NF2SATMA1 requirements.

6.How does Aetrix verify that IPB029N06NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB029N06NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB029N06NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB029N06NF2SATMA1?

All IPB029N06NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB029N06NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB029N06NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB029N06NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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