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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB029N15NM6ATMA1

Name: IPB029N15NM6ATMA1
Brand: Infineon Technologies
SKU: IPB029N15NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB029N15NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB029N15NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:1,830

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Product details

Overview

IPB029N15NM6ATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, rated for 150 V drain-source voltage, 2.9 mΩ maximum R_DS(on) at V_GS = 10 V, and 165 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and industrial SMPS where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IPB029N15NM6ATMA1 datasheet, IPB029N15NM6ATMA1 pinout, IPB029N15NM6ATMA1 application, or IPB029N15NM6ATMA1 equivalent, key selection factors include its 0.38 °C/W junction-to-case thermal resistance, 105 nC total gate charge, 310 nC output charge, 100% avalanche-tested ruggedness, and D²PAK (PG-TO263-3) package with exposed drain tab for enhanced thermal performance.

Technical Context

This device employs a trench-based silicon process optimized for high-voltage switching efficiency and low gate charge. Its gate threshold voltage (3.0–4.0 V) enables compatibility with standard 5 V and 8–15 V gate drivers, while its 5.4 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The MOSFET delivers 2.3–2.9 mΩ typical-to-max R_DS(on) across V_GS = 8–15 V and I_D = 50–100 A, with dynamic parameters including 7600 pF input capacitance, 2300 pF output capacitance, and 25 pF reverse transfer capacitance at V_DS = 75 V - enabling predictable turn-on/turn-off timing in synchronous buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 120 V bus applications with 25 % safety margin
R_DS(on),max	2.9 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.5 W conduction loss at 100 A in TO-263 package
I_D,cont	165 A at T_C = 25 °C - Supports high-current power stages without parallel devices
Q_g,total	105 nC - Determines gate driver power requirement and switching loss trade-off
Q_oss	310 nC - Directly impacts turn-off energy and zero-voltage switching feasibility
R_thJC	0.38 °C/W - Enables >300 W power dissipation with moderate heatsinking
E_AS	1047 mJ - Confirmed single-pulse avalanche energy for inductive load protection

Pinout & Package

IPB029N15NM6ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with an exposed drain copper tab on the underside for direct thermal coupling to PCB copper or heatsink. Pin 1 is Gate, Pin 2 is Drain (tab), and Pin 3 is Source - confirmed per Infineon's official package outline and pin assignment diagram.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤1.56 Ω external gate resistance to damp ringing
Pin 2 (Drain / Tab)	High-side power path	Exposed metal tab electrically connected to drain; must be soldered to ≥6 cm² copper for rated thermal performance
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; critical for low-inductance layout

Key Features

Feature	Design Value
OptiMOS™ 6 silicon technology	Delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation for improved efficiency in high-frequency SMPS
100 % avalanche tested	Guarantees robustness against inductive switching stress without derating in motor or solenoid drive circuits
Pb-free, halogen-free, MSL 1	Enables lead-free reflow assembly and long-term reliability in industrial environments per J-STD-020
Low Q_rr (220–440 nC)	Reduces diode recovery losses and EMI in synchronous rectification and bidirectional power conversion

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: High-efficiency 3-phase inverter stage for 1–5 kW servo drives operating at 20–100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch in each leg of the inverter bridge; handles 100+ A peak phase current with minimal conduction loss.

Use Value: 2.9 mΩ R_DS(on) reduces I²R loss by >30 % vs. legacy 5 mΩ devices, directly improving thermal margin and system efficiency.

Use Scenario: Primary-side high-side switch in 1.5–3 kW server power supply LLC resonant converter.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main switch; operates at 300–700 kHz with 150 V bus rating.

Use Value: 310 nC Q_oss and 0.38 °C/W R_thJC enable reliable operation under high dv/dt and thermal cycling conditions.

Renewable Energy Inverters

EV Onboard Charger (OBC)

Use Scenario: DC-link switching stage in 5–10 kW photovoltaic string inverters with 1000 V DC input.

IC Role / Device Role / Timing Role: Boost converter switch handling up to 165 A continuous current with 150 V blocking capability.

Use Value: 1047 mJ E_AS ensures safe operation during grid fault transients and MPPT-induced overcurrent events.

Use Scenario: Isolated DC-DC stage in 6.6 kW bidirectional OBC converting 400 V battery to 400 V AC grid.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch in dual-active-bridge topology requiring low Q_g and fast body diode recovery.

Use Value: 220 nC Q_rr at 500 A/μs dI/dt minimizes reverse recovery loss and improves light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140N15F7	R_DS(on),max = 3.2 mΩ; Q_g,total = 115 nC; R_thJC = 0.45 °C/W	Higher conduction loss and thermal resistance limit peak current capability in compact layouts	Prefer when cost sensitivity outweighs 5–7 % efficiency gain and thermal headroom is available
IXFH140N15X3	R_DS(on),max = 3.0 mΩ; Q_g,total = 132 nC; TO-247 package with higher R_thJC (0.55 °C/W)	Larger footprint and inferior thermal performance require larger heatsinks in space-constrained designs	Select only if through-hole mounting or legacy board compatibility is mandatory

Compared with STP140N15F7 and IXFH140N15X3, IPB029N15NM6ATMA1 offers the lowest R_DS(on) × Q_g product and best thermal resistance in D²PAK, making it optimal for high-power-density industrial and automotive-grade power stages where efficiency and thermal management are co-critical.

Availability

IPB029N15NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, renewable energy inverters, and EV onboard chargers requiring stable component supply and full JEDEC industrial qualification.

Supply support for IPB029N15NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 6 150 V power transistor product line, engineered specifically for high-efficiency, high-reliability switching in industrial SMPS, motor control, and renewable energy systems demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies a maximum storage and operating temperature of 175 °C, with continuous operation limited by thermal design. At T_C = 100 °C, the device supports 126 A continuous drain current (derated from 165 A at 25 °C). Thermal design must ensure junction temperature remains ≤175 °C using the 0.38 °C/W R_thJC value and appropriate PCB copper area.

Is IPB029N15NM6ATMA1 suitable for synchronous rectification?

Yes - its low 0.89–1.0 V forward diode voltage at 100 A and 220–440 nC reverse recovery charge (Q_rr) make it viable for synchronous rectification in DC-DC converters. However, its body diode recovery time (44–88 ns) is slower than dedicated SiC or GaN FETs, so optimal performance requires careful dead-time tuning and gate drive optimization.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage range of 3.0–4.0 V and is fully specified for 0 V turn-off. While applying –5 V enhances noise immunity in high-dv/dt environments, the datasheet confirms stable operation with 0 V gate-source voltage during off-state, and no negative bias is required for functional reliability.

How does the 100 % avalanche test impact real-world reliability?

Each unit undergoes single-pulse avalanche testing to 100 A and 1047 mJ, verifying robustness against unclamped inductive switching events. This ensures field reliability in motor drives and solenoid controls where transient overvoltage can occur, eliminating need for external snubbers in many industrial applications and reducing system-level BOM cost.

IPB029N15NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 165A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 15V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 100A, 15V

Vgs(th) (Max) @ Id:: 4V @ 276µA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9900 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 395W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB029N15NM6ATMA1 FAQ

1.How can I place an order for IPB029N15NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB029N15NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB029N15NM6ATMA1 reliable?

The price and inventory of IPB029N15NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB029N15NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB029N15NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB029N15NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB029N15NM6ATMA1?

IPB029N15NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB029N15NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB029N15NM6ATMA1?

For technical support, including IPB029N15NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB029N15NM6ATMA1 requirements.

6.How does Aetrix verify that IPB029N15NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB029N15NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB029N15NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB029N15NM6ATMA1?

All IPB029N15NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB029N15NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB029N15NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPB029N15NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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