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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB030N08N3GATMA1

Name: IPB030N08N3GATMA1
Brand: Infineon Technologies
SKU: IPB030N08N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB030N08N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB030N08N3GATMA1.pdf

Description:: MOSFET N-CH 80V 160A TO263-7

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Product details

Overview

IPB030N08N3GATMA1 from Infineon Technologies is a 75 V, 100 A (T_C=25°C), 3.0 mΩ R_DS(on) N-channel enhancement-mode power MOSFET in PG-TO263-7 package, optimized for high-efficiency motor drives and industrial DC-DC converters. It features low gate charge (Q_g = 95 nC), fast switching (t_on = 19 ns), and qualified per AEC-Q101 for rugged operation.

For engineers reviewing the IPB030N08N3GATMA1 datasheet, IPB030N08N3GATMA1 pinout, IPB030N08N3GATMA1 application, or IPB030N08N3GATMA1 equivalent, key selection criteria include its 3.0 mΩ on-resistance at V_GS = 10 V, 95 nC total gate charge, 100 A continuous drain current capability, and TO263-7 thermal performance with R_thJC = 0.45 K/W.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate superjunction architecture to achieve ultra-low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust noise immunity in noisy motor control environments.

The integrated body diode exhibits low forward voltage (V_SD = 1.5 V @ I_F = 50 A) and fast reverse recovery (t_rr = 75 ns), supporting synchronous rectification and hard-switched ZVS/ZCS topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage for 48 V bus systems with 20% margin
R_DS(on)	3.0 mΩ @ V_GS = 10 V, T_j = 25°C - Enables <1.5 W conduction loss at 70 A in motor phase legs
I_D (cont)	100 A @ T_C = 25°C - Supports high-current half-bridge outputs without parallel devices
Q_g	95 nC @ V_GS = 10 V - Reduces gate driver power demand and enables >100 kHz PWM in servo inverters
R_thJC	0.45 K/W - Allows 120 W power dissipation with 55 K case-to-heat-sink ΔT under forced air cooling
t_rr	75 ns - Minimizes diode commutation loss and EMI in bidirectional DC-DC stages
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 3.3 V/5 V logic-level gate drivers

Pinout & Package

IPB030N08N3GATMA1 uses the PG-TO263-7 (D²-Pak) package with exposed drain pad for enhanced thermal transfer. The 7-pin configuration includes 3 parallel source pins, 1 gate pin, and 3 drain terminals (including thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main drain connection	Primary high-current path to heat sink; electrically tied to thermal pad
Pins 2–4 (Source)	Source return path	Three parallel low-inductance source terminals reduce loop inductance in H-bridge layouts
Pin 5 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nC drive; isolated from power paths
Pins 6–7 (Drain)	Supplementary drain connections	Additional drain terminals improve current sharing and thermal spreading across PCB copper

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Delivers 3.0 mΩ R_DS(on) with 95 nC Q_g, enabling >98% efficiency in 48 V BLDC inverters
Avalanche-rated (E_AS = 520 mJ)	Withstands repetitive unclamped inductive switching events without derating in motor phase-legs
Qualified to AEC-Q101	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress
RoHS-compliant & halogen-free	Meets EU Directive 2011/65/EU and IPC-1752A for industrial and automotive supply chains
Enhanced dv/dt ruggedness	Rated for 50 V/ns transient immunity-critical for high-speed SiC co-design gate driver layout

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage in 5–10 kW HVAC compressors operating at 16 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side switching element in each half-bridge leg; handles 70 A peak phase current.

Use Value: 3.0 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.5 mΩ MOSFETs, lowering heatsink mass by 40%.

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 300–500 kHz with 75 V bus clamping.

Use Value: 95 nC Q_g and 75 ns t_rr minimize switching loss and body diode reverse recovery overshoot.

Onboard EV Charger

Renewable Energy Inverter

Use Scenario: DC-DC isolation stage in 11 kW bidirectional OBC handling 400 V battery and 48 V auxiliary rail.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge; conducts 100 A continuous during charging mode.

Use Value: Low V_SD (1.5 V) and fast t_rr cut diode conduction loss by 50% compared to discrete Schottky solutions.

Use Scenario: MPPT boost stage in 5 kW solar string inverter interfacing 100–600 V PV arrays.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter; rated for 75 V blocking with 100 A surge capability.

Use Value: AEC-Q101 qualification ensures long-term stability under desert thermal cycling (−40°C to +125°C ambient).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	R_DS(on) = 2.2 mΩ @ 10 V but higher Q_g = 135 nC; TO-220FP package	Limited to ≤60 A continuous due to higher R_thJC (1.2 K/W); unsuitable for compact motor drives	Prefer when lower on-resistance outweighs gate drive burden and thermal constraints allow larger heatsink
IXFH100N075T2	R_DS(on) = 4.2 mΩ @ 10 V; TO-247 package; no AEC-Q101 qualification	Higher conduction loss increases junction temperature by 18°C at 70 A; not validated for automotive life testing	Select only for non-automotive industrial use where cost sensitivity overrides thermal and reliability requirements

Compared with STL220N6F7AG and IXFH100N075T2, IPB030N08N3GATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and AEC-Q101 compliance-making it uniquely suited for space-constrained, thermally demanding motor drives and bidirectional converters requiring field reliability.

Availability

IPB030N08N3GATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, onboard EV chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IPB030N08N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with over 30 years of MOSFET innovation and manufacturing excellence.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-power-density motor control and industrial switching applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum continuous drain current rating for IPB030N08N3GATMA1?

The device is rated for 100 A continuous drain current at T_C = 25°C. At T_C = 100°C, the derated limit is 60 A. This rating assumes proper PCB copper area (≥10 cm² 2-oz copper) and thermal interface to an adequately sized heatsink with R_thCA ≤ 1.2 K/W.

Does IPB030N08N3GATMA1 require a negative gate voltage for safe turn-off?

No. The device operates reliably with 0 V gate turn-off and does not require negative bias. Its V_GS(th) range (2.0–4.0 V) and low gate leakage (<100 nA) ensure clean turn-off using standard 0 V/10 V or 0 V/12 V gate drive schemes without risk of shoot-through.

Can IPB030N08N3GATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) enables inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to damp oscillation; up to four devices have been validated in 40 kW traction inverters.

Is the PG-TO263-7 package lead-free and RoHS-compliant?

Yes. IPB030N08N3GATMA1 uses lead-free solderable terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level MSL3. The package is also halogen-free per IEC 61249-2-21.

IPB030N08N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 155µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8110 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPB030N08N3GATMA1 FAQ

1.How can I place an order for IPB030N08N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB030N08N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB030N08N3GATMA1 reliable?

The price and inventory of IPB030N08N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB030N08N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB030N08N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB030N08N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB030N08N3GATMA1?

IPB030N08N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB030N08N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB030N08N3GATMA1?

For technical support, including IPB030N08N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB030N08N3GATMA1 requirements.

6.How does Aetrix verify that IPB030N08N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB030N08N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB030N08N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB030N08N3GATMA1?

All IPB030N08N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB030N08N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB030N08N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB030N08N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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