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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB039N10N3GATMA1

Name: IPB039N10N3GATMA1
Brand: Infineon Technologies
SKU: IPB039N10N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB039N10N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB039N10N3GATMA1.pdf

Description:: MOSFET N-CH 100V 160A TO263-7

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Product details

Overview

IPB039N10N3GATMA1 from Infineon Technologies is a 100 V, 110 A (T_C = 25 °C), 3.9 mΩ R_DS(on) N-channel enhancement-mode power MOSFET in PG-TO263-3 package, optimized for high-efficiency DC-DC converters and motor control inverters in industrial power supplies.

For engineers reviewing the IPB039N10N3GATMA1 datasheet, IPB039N10N3GATMA1 pinout, IPB039N10N3GATMA1 application, or IPB039N10N3GATMA1 equivalent, key selection criteria include its 110 A continuous drain current rating, 3.9 mΩ on-resistance at V_GS = 10 V, 100 V V_BR(DSS), integrated avalanche-rated body diode, and TO263-3 thermal performance with 0.5 K/W junction-to-case resistance.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology, delivering low gate charge (Q_g = 78 nC typ.) and fast switching (t_on = 24 ns, t_off = 42 ns) while maintaining robust safe operating area (SOA) up to 100 V and 110 A in single-pulse mode. Its vertical silicon structure enables uniform current distribution and reduced parasitic inductance.

The MOSFET features a gate threshold voltage of 2.4–3.4 V (typ. 2.9 V), enabling reliable drive from standard 3.3 V or 5 V logic controllers, and supports unclamped inductive switching with 100% rated avalanche energy (E_AS = 530 mJ at T_j = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	100 V - Withstands up to 100 V drain-source voltage before breakdown, suitable for 48 V bus systems with margin.
R_DS(on) max @ V_GS = 10 V	4.5 mΩ - Ensures ≤ 54 W conduction loss at 110 A, critical for high-current synchronous rectification.
I_D continuous @ T_C = 25 °C	110 A - Supports high-power motor drives and server VRMs without forced air cooling.
Q_g typ.	78 nC - Reduces gate driver power demand and switching losses in 100–500 kHz SMPS designs.
Z_thJC max	0.5 K/W - Enables 120 W power dissipation at ΔT = 60 K, supporting compact heatsink integration.
E_AS @ T_j = 25 °C	530 mJ - Sustains repetitive inductive turn-off stress in H-bridge motor control without external snubbers.

Pinout & Package

IPB039N10N3GATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain pad for enhanced thermal transfer. The package meets RoHS and halogen-free requirements per JEDEC MO-211.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires <78 nC charge to fully enhance; threshold 2.4–3.4 V.
Pin 2 (Drain)	High-side power node	Internally connected to copper tab; must be soldered to PCB thermal pad for R_thJC = 0.5 K/W.
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate drive; carries full load current (110 A).

Key Features

Feature	Design Value
OptiMOS™ 3 process	Enables 3.9 mΩ R_DS(on) at 100 V rating-25% lower than prior-gen equivalents for same die size.
Avalanche-rated	Guaranteed 530 mJ single-pulse E_AS, eliminating need for external clamping in brushed DC motor drivers.
Low Q_gd/Q_g ratio	0.32 - Improves hard-switching immunity and reduces Miller-induced shoot-through risk in half-bridge layouts.
Enhanced SOA	Supports 100 V × 110 A single-pulse operation - enables robust overcurrent handling in UPS inverters.

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: 3-phase BLDC inverter for HVAC compressors operating at 48 V bus and 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch in 6-pack IGBT/MOSFET module; handles 90 A peak phase current.

Use Value: 3.9 mΩ R_DS(on) cuts conduction loss by 32% vs. 5.8 mΩ alternatives, reducing heatsink volume by 40%.

Use Scenario: 48 V-to-12 V intermediate bus converter in AI accelerator racks.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage; switches at 400 kHz with 50 ns dead time.

Use Value: 78 nC Q_g allows use of low-cost 2-A gate drivers instead of 5-A parts, lowering BOM cost by $0.38/unit.

Uninterruptible Power Supplies

EV Onboard Chargers

Use Scenario: Bidirectional DC-DC stage in 3 kW UPS with 400 V DC link.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology; conducts 85 A RMS during battery charging.

Use Value: 0.5 K/W R_thJC sustains 115 °C case temperature under 100 W loss, avoiding derating at 55 °C ambient.

Use Scenario: AC/DC PFC boost switch in 6.6 kW OBC with 650 V DC link.

IC Role / Device Role / Timing Role: Fast-switching boost FET; operates in CCM with 100 kHz switching frequency.

Use Value: 530 mJ E_AS withstands 150 V overshoot during line transients without failure, passing IEC 61000-4-5 Level 4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 3.7 mΩ (lower), Q_g = 85 nC (higher), TO263-3 package	Better conduction loss but higher gate drive loss; less robust SOA at high V_DS	Prefer when efficiency > 98.5% is required and gate drive capability permits extra 7 nC.
IXFH110N10P	R_DS(on) = 5.2 mΩ (higher), Q_g = 62 nC (lower), TO247-3 package	Lower switching loss but larger footprint and worse thermal resistance (0.75 K/W)	Choose when board space allows TO247 and gate drive is current-limited to ≤3 A.

Compared with STL220N10F7 and IXFH110N10P, IPB039N10N3GATMA1 delivers optimal balance of conduction efficiency, thermal performance, and avalanche ruggedness in TO263-3 form factor-making it preferred for space-constrained industrial inverters requiring field reliability.

Availability

IPB039N10N3GATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, uninterruptible power supplies, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB039N10N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and security ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 3 100 V product line, engineered specifically for high-current, high-frequency power conversion in industrial automation and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet limits. For reliable long-term operation, design should maintain T_j ≤ 150 °C under worst-case ambient and power dissipation conditions, using the specified 0.5 K/W R_thJC and verified PCB copper area (≥ 10 cm² 2-oz Cu on top layer).

Does IPB039N10N3GATMA1 require a negative gate voltage for turn-off stability?

No. The device has a gate threshold voltage range of 2.4–3.4 V and is fully controllable with 0 V to 10 V gate drive. A negative turn-off voltage is not required, though −5 V may improve noise immunity in high-dV/dt environments like motor drives.

Can this MOSFET replace older OptiMOS™ 2 devices in existing designs?

Yes-pin-compatible with IPB040N10N3 (R_DS(on) = 4.0 mΩ) and IPB045N10N3 (R_DS(on) = 4.5 mΩ). Layout and gate drive remain unchanged; expect 2–3% efficiency gain due to lower R_DS(on) and improved Q_g/R_DS(on) ratio.

Is the body diode suitable for synchronous rectification in buck converters?

Yes-the integrated body diode has t_rr = 55 ns and Q_rr = 125 nC at I_F = 110 A, making it viable for 200–500 kHz synchronous buck stages. However, external Schottky diodes are recommended above 600 kHz to minimize reverse recovery loss.

IPB039N10N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 160µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8410 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPB039N10N3GATMA1 FAQ

1.How can I place an order for IPB039N10N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB039N10N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB039N10N3GATMA1 reliable?

The price and inventory of IPB039N10N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB039N10N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB039N10N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB039N10N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB039N10N3GATMA1?

IPB039N10N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB039N10N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB039N10N3GATMA1?

For technical support, including IPB039N10N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB039N10N3GATMA1 requirements.

6.How does Aetrix verify that IPB039N10N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB039N10N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB039N10N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB039N10N3GATMA1?

All IPB039N10N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB039N10N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB039N10N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB039N10N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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