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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB040N08NF2SATMA1

Name: IPB040N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPB040N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB040N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB040N08NF2SATMA1.pdf

Description:: MOSFET N-CH 80V 107A D2PAK

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Product details

Overview

IPB040N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, optimized for high-efficiency DC-DC conversion and motor control. It delivers 80 V V_DS, 4.0 mΩ R_DS(on) max at V_GS = 10 V, 107 A continuous drain current, and 65 nC Q_oss, enabling low conduction and switching losses in synchronous buck converters.

For engineers reviewing the IPB040N08NF2SATMA1 datasheet, IPB040N08NF2SATMA1 pinout, IPB040N08NF2SATMA1 application, or IPB040N08NF2SATMA1 equivalent, key selection criteria include its 1.0 °C/W R_thJC, 100% avalanche-tested ruggedness, RoHS- and halogen-free compliance, and strong gate drive robustness with 54 nC total gate charge.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_r = 54 ns, t_f = 13 ns) and low gate charge (Q_g = 54 nC). Its integrated body diode features 33 ns reverse recovery time and 189 nC Q_rr, supporting high-frequency synchronous rectification.

The MOSFET operates across –55 °C to +175 °C junction temperature range with JEDEC-qualified reliability. Thermal design is enabled by direct-drain tab mounting and a 1.0 °C/W junction-to-case thermal resistance, allowing efficient heat transfer to external heatsinks in high-power industrial inverters and server VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V input bus systems with 20 % safety margin against transients.
R_DS(on), max	4.0 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A, critical for high-current POL stages.
I_D, cont	107 A @ T_C = 25 °C - Sustains peak load currents in 1–3 kW motor drives without derating.
Q_oss	65 nC - Reduces turn-off energy loss in hard-switched topologies like LLC resonant converters.
E_AS	119 mJ - Withstands single-pulse inductive energy in unclamped inductive switching (UIS) events.
R_thJC	1.0 °C/W - Allows direct thermal path to heatsink, enabling >120 W power dissipation at ΔT = 120 K.
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

IPB040N08NF2SATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. The package supports surface-mount assembly and requires soldering of the drain tab to a large copper area for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; low 1.9 Ω internal gate resistance enables stable high-speed switching.
Pin 2 (Drain) / Tab	High-side power node	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate driver; must be routed with low inductance to minimize ringing.

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees ruggedness under unclamped inductive switching, eliminating need for external snubbers in motor phase-legs.
StrongIRFET™ 2 architecture	Delivers 15 % lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 300–1000 kHz SMPS.
Pb-free, halogen-free	Complies with IEC61249-2-21 and RoHS Directive 2011/65/EU, supporting eco-design requirements for industrial equipment.
Optimized body diode	33 ns t_rr and low Q_rr enable zero-voltage switching (ZVS) in synchronous rectifiers without shoot-through risk.

Applications

Server Voltage Regulator Modules

Industrial Motor Drives

Use Scenario: High-current point-of-load regulation in AI accelerator servers delivering up to 300 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 500–800 kHz.

Use Value: 4.0 mΩ R_DS(on) reduces conduction loss by 35 % vs. 6.2 mΩ alternatives, lowering VRM temperature rise by 12 °C at full load.

Use Scenario: Three-phase inverter stage in 5–10 kW servo drives for CNC machinery.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling 100 A peak phase current with 10 µs dead-time.

Use Value: 119 mJ E_AS rating withstands IGBT-like inductive kickback during emergency stop, eliminating external clamping diodes.

Telecom DC-DC Converters

Onboard EV Chargers

Use Scenario: 48 V input, 12 V output isolated forward converter in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side active clamp switch managing reset energy and reducing voltage stress.

Use Value: 65 nC Q_oss minimizes clamp capacitor charging loss, improving full-load efficiency by 0.8 % over competitive 5 mΩ devices.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage.

IC Role / Device Role / Timing Role: 80 V-rated rectifier replacing Schottky diodes in 400 V battery-fed LLC secondary.

Use Value: 0.95 V V_SD at 80 A and 33 ns t_rr reduce conduction and recovery losses by 42 % vs. discrete SiC diodes in same footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 3.2 mΩ (lower), but Q_g = 92 nC (68 % higher); TO-220FP package limits thermal performance.	Better for low-frequency, high-current linear regulation; unsuitable for >300 kHz switching due to gate charge penalty.	Prefer when thermal mass > switching speed; avoid in compact VRMs requiring fast edge rates.
IXFH80N08X3	R_DS(on) = 5.2 mΩ (30 % higher), but E_AS = 220 mJ (85 % higher); TO-247 package offers superior heatsinking.	Preferred in high-reliability UPS inverters where avalanche margin outweighs conduction loss.	Select for mission-critical 24/7 operation with frequent overload events; not optimal for space-constrained telecom gear.

Compared with STL220N8F7AG and IXFH80N08X3, IPB040N08NF2SATMA1 delivers the best balance of low R_DS(on), moderate Q_g, and industry-leading thermal resistance-making it ideal for high-density, high-frequency power stages where board area and thermal management are constrained.

Availability

IPB040N08NF2SATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, industrial motor drives, telecom DC-DC converters, and onboard EV chargers requiring stable component supply and long-term production continuity.

Supply support for IPB040N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the StrongIRFET™ 2 family, engineered specifically for high-efficiency, high-current switching in datacenter, industrial, and e-mobility power systems where thermal density and reliability are paramount.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 1.6 Ω external gate resistor for dynamic characterization. For stable operation, use 2.2–4.7 Ω to limit peak gate current below 3 A while maintaining <20 ns rise/fall times. Lower values increase EMI risk; higher values degrade switching speed and increase switching loss.

Can IPB040N08NF2SATMA1 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables natural current sharing. Use matched gate drive paths, identical PCB trace lengths, and shared source inductance compensation to ensure balanced dynamic current distribution across ≥3 paralleled units.

Is the drain tab electrically isolated from the package mold compound?

No-the drain tab is metallurgically bonded to the silicon die's drain region and forms the primary electrical and thermal interface. It must be soldered to a PCB copper pour or heatsink, and isolation requires insulating thermal pads or ceramic substrates if mounting to grounded metal chassis.

Does this MOSFET require a negative gate turn-off voltage?

No-its V_GS(th) range (2.2–3.8 V) and low leakage (<100 nA IGSS) allow safe turn-off with 0 V gate bias. Applying –5 V improves noise immunity in high-dV/dt environments but is not required for functional operation or reliability.

IPB040N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 107A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB040N08NF2SATMA1 FAQ

1.How can I place an order for IPB040N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB040N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB040N08NF2SATMA1 reliable?

The price and inventory of IPB040N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB040N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB040N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB040N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB040N08NF2SATMA1?

IPB040N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB040N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB040N08NF2SATMA1?

For technical support, including IPB040N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB040N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPB040N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB040N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB040N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB040N08NF2SATMA1?

All IPB040N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB040N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB040N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB040N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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