Infineon Technologies IPB049N08N5ATMA1

Overview

IPB049N08N5ATMA1 from Infineon Technologies is an N-channel 80 V, 4.9 mΩ R_DS(on) OptiMOS™ 5 power MOSFET in D²PAK (TO-263-3) package, optimized for high-frequency synchronous rectification and DC/DC conversion. It delivers 80 A continuous drain current at T_C = 25 °C, features 42 nC total gate charge, and is 100% avalanche tested for ruggedness in hard-switching topologies.

For engineers reviewing the IPB049N08N5ATMA1 datasheet, IPB049N08N5ATMA1 pinout, IPB049N08N5ATMA1 application, or IPB049N08N5ATMA1 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, thermal resistance (R_thJC = 0.9 K/W), SOA robustness at 40 V, and suitability for 48 V input buck converters with >1 MHz switching.

Technical Context

This device employs trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (FOM) of 205.8 mΩ·nC, enabling high-efficiency operation in high-frequency point-of-load (POL) converters. Its gate threshold voltage (2.2–3.8 V) supports standard 5 V or 10 V gate drive, and its low reverse recovery charge (Q_rr = 92–184 nC) minimizes body diode losses during synchronous FET commutation.

The integrated freewheeling diode exhibits V_SD = 0.98 V at 80 A and T_j = 25 °C, with t_rr = 56–112 ns under 100 A/µs di/dt - critical for minimizing shoot-through risk and EMI in half-bridge configurations operating up to 2 MHz.

Key Specifications

Pinout & Package

IPB049N08N5ATMA1 uses the D²PAK (PG-TO263-3) surface-mount package with exposed drain tab for thermal and electrical connection. The package is RoHS-compliant, halogen-free, and qualified per JEDEC J-STD-20/JESD22 for industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with STL220N8F7 and IXFH80N085X3, IPB049N08N5ATMA1 offers the best balance of R_DS(on) and Q_G in surface-mount form factor, delivering superior efficiency in space-constrained, high-frequency DC/DC designs where thermal interface to PCB is well-controlled.

Availability

IPB049N08N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V buck converters, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for IPB049N08N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 family - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and EV infrastructure, emphasizing low R_DS(on) × Q_G and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPB049N08N5ATMA1 supports 80 A continuous drain current at T_C = 25 °C and derates to approximately 55 A at T_C = 100 °C, based on the ID vs. TC curve (Diagram 2) and thermal resistance R_thJC = 0.9 K/W. This derating ensures safe junction temperature below 175 °C under steady-state conditions with proper heatsinking.

Is this MOSFET suitable for use as a synchronous rectifier in LLC resonant converters?

Yes - its low Q_rr (92–184 nC), fast t_rr (56–112 ns), and low V_SD (0.98 V) make it well-suited for secondary-side synchronous rectification in LLC converters operating up to 1 MHz. The integrated diode's soft recovery behavior reduces EMI and improves ZVS margin compared to standard silicon diodes.

Does the device require gate resistors for reliable switching?

A gate resistor (typically 1.6 Ω external, as used in datasheet switching time tests) is recommended to dampen ringing, control dV/dt, and limit peak gate current. Without it, parasitic inductance may cause oscillation or overvoltage stress on the gate oxide, especially at >500 kHz switching frequencies and high di/dt conditions.

What is the significance of the "ATMA1" suffix in the part number?

The "ATMA1" suffix denotes tape-and-reel packaging (T), RoHS-compliant lead finish (M), and standard industrial temperature grade (A1). It indicates the device is supplied in 800-unit reels per JEDEC standard, with matte tin plating and qualification for −55 °C to +175 °C operation - not a variant with different electrical specs.