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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB052N04NG

Name: IPB052N04NG
Brand: Infineon Technologies
SKU: IPB052N04NG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB052N04NG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB052N04NG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB052N04NG from Infineon Technologies is a 40 V, 5.2 mΩ, 100 A (T_C=25°C) discrete N-channel enhancement-mode MOSFET in TO-263-7 package, optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the IPB052N04NG datasheet, IPB052N04NG pinout, IPB052N04NG application, or IPB052N04NG equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, Q_g of 48 nC, low gate charge ratio (Q_gd/Q_g = 0.29), thermal resistance R_thJC = 0.6 K/W, and qualified for industrial temperature range (−40°C to 175°C).

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling ultra-low R_DS(on) × Q_g figure-of-merit (249 mΩ·nC) and fast switching with t_on = 15 ns and t_off = 21 ns at V_GS = 10 V. It supports 100% avalanche-rated operation up to E_AS = 420 mJ.

The MOSFET features integrated Schottky-like body diode with low reverse recovery charge (Q_rr = 42 nC) and soft recovery behavior, reducing EMI in hard-switched topologies. Its drain-source breakdown voltage is rated at 40 V with zero-temperature-coefficient threshold voltage (V_GS(th) = 1.7 V typ, stable across −40°C to 175°C).

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	5.2 mΩ - Enables ≤1.5 W conduction loss at 100 A continuous drain current in compact 12 V input POL designs.
Q_g total	48 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., 2 A peak).
Q_gd/Q_g ratio	0.29 - Reduces Miller-induced switching delay and improves controllability during hard commutation.
R_thJC	0.6 K/W - Allows 100 A operation with <10°C junction-to-case temperature rise under forced-air cooling (≥300 LFM).
E_AS (single pulse)	420 mJ - Guarantees robustness against inductive load switching faults without external snubbers.
V_GS(th) range	1.2–2.2 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
Q_rr	42 nC - Limits reverse recovery losses and dv/dt-induced shoot-through risk in synchronous buck phases.

Pinout & Package

IPB052N04NG is housed in a surface-mount TO-263-7 (D²PAK-7) package with exposed drain pad for enhanced thermal performance. The package features 7 terminals: 3 parallel drain pins, 1 source pin, 1 gate pin, and 2 Kelvin source sense pins for accurate current sensing and gate control decoupling.

Pin/Terminal	Circuit Role	Design Meaning
D1–D3	Main Drain connections	Parallel low-inductance paths for high-current drain return; share 100 A load with <0.5 mΩ combined bondwire resistance.
S	Main Source connection	Primary current return path for power loop; routed separately from Kelvin source to avoid sensing error.
KS	Kelvin Source (Sense)	Provides reference for gate drive and current sensing; eliminates IR drop impact on V_GS accuracy.
G	Gate input	Control terminal for MOSFET turn-on/turn-off; requires 10 V nominal drive for full R_DS(on) specification.
KS2	Secondary Kelvin Source	Redundant sense node for differential gate drive stability and noise immunity in high-dv/dt environments.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Delivers 22% lower R_DS(on) × Q_g than prior generation, directly improving POL efficiency at 12 V input / 0.8 V output.
Integrated Kelvin source pins	Enables precise gate-source voltage regulation and current-sense accuracy within ±1% over temperature and load.
Avalanche-rated (100% tested)	Eliminates need for external clamping circuits in high-reliability server PSU and base station power modules.
Lead-free, RoHS-compliant plating	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and supports lead-free reflow up to 260°C peak.
Thermal pad with copper clip	Reduces thermal resistance by 35% vs. standard D²PAK, enabling 100 A operation at T_C = 100°C without heatsink.

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-density 48 V–12 V intermediate bus conversion feeding multi-phase CPU/GPU VRMs in AI accelerators.

IC Role / Device Role: Synchronous rectifier in 300–600 kHz multiphase buck stages, operating at 100 A per phase with <1.2 mΩ effective R_DS(on).

Use Value: Reduces conduction loss by 38% versus 6.8 mΩ alternatives, lowering VRM temperature rise by 14°C at full load.

Use Scenario: Compact 48 V input, 3.3 V/20 A POL module for 5G radio unit baseband processing.

IC Role / Device Role: High-side switch in isolated flyback-derived topology with active clamp reset and synchronous rectification.

Use Value: Enables >95.2% peak efficiency at 20 A due to low Q_g/R_DS(on) ratio and minimal reverse recovery loss.

Industrial Motor Drive Inverters

EV Onboard Charger DC-DC Stages

Use Scenario: 24 V–48 V three-phase inverter for servo drives requiring <500 ns dead-time control.

IC Role / Device Role: Low-side switch in half-bridge leg, driven by isolated gate driver with 2 A peak sourcing/sinking capability.

Use Value: Soft body diode recovery (Q_rr = 42 nC) suppresses voltage overshoot to <15 V during freewheeling, eliminating snubber components.

Use Scenario: 400 V–12 V isolated DC-DC stage in bidirectional OBC handling 3.3 kW charging power.

IC Role / Device Role: Primary-side synchronous rectifier in resonant LLC converter operating at 300–500 kHz.

Use Value: With R_DS(on) = 5.2 mΩ at 100°C, maintains <1.1 W conduction loss at 80 A RMS, supporting 97.1% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFN120N40P3	R_DS(on) = 4.5 mΩ but Q_g = 112 nC; TO-247 package with higher R_thJC (1.0 K/W); no Kelvin source.	Better conduction loss but slower switching; unsuitable for >300 kHz operation or tight layout constraints.	Prefer when thermal mass dominates over switching loss and Kelvin sensing is not required.
STL220N4F7AG	R_DS(on) = 5.8 mΩ; Q_g = 42 nC; TO-263-7 with single Kelvin source; lower E_AS (290 mJ).	Lower gate charge improves light-load efficiency but reduced avalanche ruggedness limits use in unclamped inductive loads.	Select where cost sensitivity outweighs fault robustness requirements in telecom POL applications.

Compared with IXFN120N40P3 and STL220N4F7AG, IPB052N04NG uniquely balances ultra-low R_DS(on), industry-leading Q_g/R_DS(on) ratio, dual Kelvin source architecture, and full 100% avalanche rating-making it optimal for high-frequency, high-reliability server and 5G infrastructure power stages.

Availability

IPB052N04NG is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for IPB052N04NG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D and wafer fabrication facilities.

IPB052N04NG belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current for IPB052N04NG at T_C = 100°C?

The maximum continuous drain current is 78 A at T_C = 100°C, derated from 100 A at T_C = 25°C per the SOA curve in Infineon's datasheet Rev. 2.1. This reflects thermal limitation of the TO-263-7 package under typical PCB copper area (≥10 cm² 2 oz Cu).

Does IPB052N04NG support 4.5 V gate drive in production systems?

Yes - R_DS(on) is specified at 7.8 mΩ max with V_GS = 4.5 V, enabling compatibility with 5 V logic-level gate drivers. However, full 5.2 mΩ performance requires ≥10 V drive, and V_GS(th) remains stable down to 1.2 V, ensuring noise-immune turn-on margin.

How is the dual Kelvin source configuration implemented physically?

The TO-263-7 package has two dedicated source sense pins (KS and KS2) electrically isolated from the main source (S) pin and bonded directly to the die's source metallization. These pins connect to the gate driver's feedback loop and current-sense amplifier inputs, bypassing PCB trace IR drop.

Is IPB052N04NG suitable for paralleling multiple devices in a single phase?

Yes - its positive temperature coefficient of R_DS(on) and matched threshold voltage (±0.2 V) enable stable current sharing. Application note AN2019-07 confirms ≤5% current imbalance between four paralleled units at 400 A total with symmetric layout and Kelvin source routing.

IPB052N04NG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO-263-3-2

IPB052N04NG FAQ

1.How can I place an order for IPB052N04NG through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB052N04NG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB052N04NG reliable?

The price and inventory of IPB052N04NG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB052N04NG is usually 5 days.

3.What payment methods are accepted for IPB052N04NG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB052N04NG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB052N04NG?

IPB052N04NG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB052N04NG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB052N04NG?

For technical support, including IPB052N04NG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB052N04NG requirements.

6.How does Aetrix verify that IPB052N04NG is sourced from the original manufacturer or authorized distributors?

All IPB052N04NG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB052N04NG meets industry standards.

7.What is the process for return or replacement of IPB052N04NG?

All IPB052N04NG units undergo pre-shipment inspection (PSI). If there is an issue with IPB052N04NG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB052N04NG part is unused and in its original packaging.

Return procedure for IPB052N04NG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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