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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB055N08NF2SATMA1

Name: IPB055N08NF2SATMA1
Brand: Infineon Technologies
SKU: IPB055N08NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB055N08NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB055N08NF2SATMA1.pdf

Description:: TRENCH 40<-<100V PG-TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:449

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Product details

Overview

IPB055N08NF2SATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D²PAK (TO-263-3) package, optimized for high-efficiency DC-DC conversion and motor control. It features 80 V V_DS, 5.5 mΩ max R_DS(on) at V_GS = 10 V, 94 A continuous drain current, 100% avalanche tested, and RoHS/halogen-free compliance.

For engineers reviewing the IPB055N08NF2SATMA1 datasheet, IPB055N08NF2SATMA1 pinout, IPB055N08NF2SATMA1 application, or IPB055N08NF2SATMA1 equivalent, key selection criteria include low gate charge (Q_G = 36 nC), fast switching (t_r = 37 ns), integrated body diode with Q_rr = 154 nC, and thermal resistance R_thJC = 1.4 °C/W for high-power density designs.

Technical Context

This StrongIRFET™ 2 device uses trench-gate field-stop superjunction technology to achieve low conduction loss while maintaining robust switching performance. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) supports standard 5 V and 10 V logic-level drive, and its 44 nC output charge (Q_OSS) enables efficient operation in synchronous buck topologies up to 1 MHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 30 ns, Q_rr = 154 nC) suitable for hard-switched and ZVS applications. Thermal design is supported by a low junction-to-case resistance (1.4 °C/W) and validated JEDEC qualification for industrial temperature range (−55 °C to +175 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus systems with 20 % safety margin
R_DS(on), max	5.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A in high-current power stages
I_D, cont	94 A @ T_C = 25 °C - Supports high-current motor drives and server VRMs without forced cooling
Q_G	36 nC - Reduces gate driver power demand and enables efficient 500 kHz–1 MHz switching
Q_OSS	44 nC - Low stored output charge minimizes turn-on loss in hard-switched converters
t_r/t_f	37 ns / 7 ns - Fast edge rates support high-frequency PWM with reduced dead-time penalty
R_thJC	1.4 °C/W - Allows >100 W dissipation with modest heatsinking in compact D²PAK footprint

Pinout & Package

IPB055N08NF2SATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is compatible with standard SMT reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal accepting 10 V logic drive; RG = 1.3 Ω internal gate resistance limits ringing
Pin 2 (Drain) + Tab	Main power path (high-side/low-side)	Exposed copper tab electrically connected to drain; primary thermal path to heatsink or PCB copper
Pin 3 (Source)	Reference node / return path	Source terminal tied to power ground or switch-node reference; critical for gate drive loop integrity

Key Features

Feature	Design Value
StrongIRFET™ 2 trench-gate technology	Enables simultaneous optimization of R_DS(on) × Q_G figure-of-merit for high-frequency efficiency
100% avalanche rated (E_AS = 58 mJ)	Guarantees ruggedness against inductive switching stress without external snubbers in motor drives
Low Q_rr (154 nC) and fast t_rr (30 ns)	Reduces reverse recovery loss and EMI in synchronous rectification and half-bridge configurations
Pb-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-609A Class 1 and IEC 61249-2-21 requirements for green electronics manufacturing

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U servers.

IC Role / Device Role / Timing Role: Low-side synchronous FET in multiphase VRM; switches at 500–800 kHz with tight duty cycle control.

Use Value: 5.5 mΩ R_DS(on) and 36 nC Q_G reduce conduction + switching losses, enabling >95 % efficiency at 100 A load.

Use Scenario: 3-phase inverter driving 5–10 kW permanent magnet motors in CNC and packaging machinery.

IC Role / Device Role / Timing Role: Phase-leg low-side switch handling 94 A continuous current; operates with 120° commutation and regenerative braking.

Use Value: 100 % avalanche rating and 175 °C T_j rating ensure reliability under short-circuit and overload conditions.

Solar Microinverter DC-Link Switch

Automotive On-Board Charger (OBC) PFC Stage

Use Scenario: DC-DC isolation stage in single-phase microinverters interfacing 60 V PV strings to 400 V grid.

IC Role / Device Role / Timing Role: Primary-side switch in interleaved flyback or LLC resonant converter operating at 200–500 kHz.

Use Value: Low C_oss (420 pF) and Q_OSS (44 nC) minimize capacitive turn-on loss and improve light-load efficiency.

Use Scenario: Boost PFC switch in bidirectional OBCs converting AC grid to 400 V DC battery bus (6.6 kW).

IC Role / Device Role / Timing Role: High-current boost switch conducting 30–40 A RMS; driven by dedicated gate driver with adaptive dead-time control.

Use Value: Integrated body diode with 30 ns t_rr reduces reverse recovery loss and eliminates need for discrete SiC Schottky anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 2.2 mΩ R_DS(on), TO-220FP package, higher Q_G (52 nC)	Limited to ≤60 V systems; unsuitable for 48 V+ bus architectures requiring 80 V rating	Select only when lower voltage rating and through-hole mounting are acceptable trade-offs
IXFH50N60X3	600 V V_DS, 0.055 Ω R_DS(on), TO-247 package, slower switching (t_r = 65 ns)	Designed for high-voltage SMPS, not optimized for high-current, low-voltage switching loss	Use only in high-V_DS applications where 80 V rating is insufficient

Compared with STL220N6F7 and IXFH50N60X3, IPB055N08NF2SATMA1 delivers optimal balance of 80 V rating, ultra-low R_DS(on), and fast switching for 48–60 V industrial and automotive power stages-neither alternative matches its combined voltage rating, on-resistance, and dynamic performance.

Availability

IPB055N08NF2SATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, solar microinverters, and automotive on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB055N08NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the StrongIRFET™ 2 family, engineered specifically for high-efficiency, high-current switching in industrial motor drives, server power supplies, and renewable energy converters where low R_DS(on) × Q_G is critical.

FAQ

What is the maximum junction temperature and thermal derating behavior?

The IPB055N08NF2SATMA1 is rated for continuous operation up to 175 °C junction temperature. Derating begins linearly above 25 °C case temperature: ID drops from 94 A at TC = 25 °C to 58 A at TC = 100 °C per datasheet Figure 2. R_thJC = 1.4 °C/W enables direct thermal coupling to heatsinks via the exposed drain tab.

Does this MOSFET require a negative gate turn-off voltage?

No. The device has a standard N-channel enhancement-mode structure with V_GS(th) = 2.2–3.8 V and no requirement for negative gate bias. Gate drive can be implemented with single-supply 0–10 V or 0–12 V logic, though 10 V is recommended for full R_DS(on) specification.

Can it replace older IRFxxx or IPPxxx series devices in existing designs?

Yes-IPB055N08NF2SATMA1 is a direct drop-in replacement for IRF540N and IPP50R1K0P7 in D²PAK footprint, offering lower R_DS(on) (5.5 mΩ vs. 44 mΩ) and improved Q_G/Q_oss ratio. Layout compatibility is confirmed by identical PG-TO263-3 mechanical outline and pin assignment.

Is the body diode suitable for synchronous rectification without external diodes?

Yes-the integrated body diode is fully characterized with t_rr = 30 ns and Q_rr = 154 nC at IF = 60 A, making it suitable for synchronous rectification in buck, flyback, and LLC topologies. Its forward voltage (V_SD = 0.93 V typ.) is lower than many discrete Schottky diodes at high current.

IPB055N08NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™ 2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 55µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB055N08NF2SATMA1 FAQ

1.How can I place an order for IPB055N08NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB055N08NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB055N08NF2SATMA1 reliable?

The price and inventory of IPB055N08NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB055N08NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB055N08NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB055N08NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB055N08NF2SATMA1?

IPB055N08NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB055N08NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB055N08NF2SATMA1?

For technical support, including IPB055N08NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB055N08NF2SATMA1 requirements.

6.How does Aetrix verify that IPB055N08NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB055N08NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB055N08NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB055N08NF2SATMA1?

All IPB055N08NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB055N08NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB055N08NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB055N08NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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